InGaAs∕InP quantum well intermixing studied by high-resolution x-ray diffraction and grazing incidence x-ray analysis

2005 ◽  
Vol 97 (9) ◽  
pp. 093519 ◽  
Author(s):  
P. G. Piva ◽  
I. V. Mitchell ◽  
Huajie Chen ◽  
R. M. Feenstra ◽  
G. C. Aers ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Quantum Well Intermixing ◽  
X Ray

scholarly journals High Resolution X-Ray Diffraction Investigations of Si/SiGe Quantum Well Structures and Si/Ge Short-Period Superlattices

1993 ◽  
Vol 84 (3) ◽  
pp. 475-489
Author(s):  
G. Bauer ◽  
E. Koppensteiner ◽  
P. Hamberger ◽  
J. Nützel ◽  
G. Abstreiter ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray ◽  
Short Period ◽  
Short Period Superlattices

InGaAs/GaAs strained single quantum well characterization by high resolution X-ray diffraction

1993 ◽  
Vol 126 (1) ◽  
pp. 144-150 ◽  
Author(s):  
C. Ferrari ◽  
M.R. Bruni ◽  
F. Martelli ◽  
M.G. Simeone
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
Single Quantum ◽  
X Ray Diffraction ◽  
Single Quantum Well ◽  
X Ray

scholarly journals Strain state in single quantum well GaAs/1ML-InAs/GaAs(100) analysed by high-resolution X-ray diffraction

1998 ◽  
Vol 41 (6) ◽  
pp. 623-628 ◽  
Author(s):  
Y Zheng ◽  
J. C Boulliard ◽  
B Capelle ◽  
A Lifchitz ◽  
S.
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
Strain State ◽  
Single Quantum ◽  
X Ray Diffraction ◽  
Single Quantum Well ◽  
X Ray

High-Resolution X-Ray Diffraction Measurements of SiGe/Si Structures

1994 ◽  
Vol 375 ◽  
Author(s):  
J. L. Jordan-Sweet ◽  
P. M. Mooney ◽  
G. B. Stephenson
Keyword(s):  
High Resolution ◽  
Alloy Composition ◽  
Strain Relaxation ◽  
Grazing Incidence ◽  
Diffraction Peak ◽  
Thin Layers ◽  
High Flux ◽  
X Ray Diffraction ◽  
X Ray ◽  
Grazing Incidence Diffraction

AbstractHigh-resolution x-ray diffraction is an excellent probe of strain relaxation in complex SiGe structures. The high flux provided by synchrotron sources enables us to make extensive reciprocal space map measurements and evaluate many samples. The diffraction peak positions of each layer in a step-graded structure, measured for two different reflections, yield quantitative values for the relaxation and alloy composition in the layer. Grazing-incidence diffraction allows us to determine the in-plane structure of very thin layers, which have thickness-broadened peaks at conventional diffraction geometries. We demonstrate the power of these techniques with two examples.

High Resolution X-ray Diffraction Characterization of [111]B Oriented InGaAs/GaAs Mqw Structures

1995 ◽  
Vol 39 ◽  
pp. 439-448
Author(s):  
A Sanz-Hervas ◽  
A Sacedón ◽  
E.J Abril ◽  
J.L Sanchez-Rojas ◽  
C. Villar ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
Structural Information ◽  
Multiple Quantum Well ◽  
Growth Conditions ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray

In this work we apply high-resolution X-ray diffractometry to the study of InGaAs/GaAs multiple quantum well structures on (001) and(lll)B GaAs substrates. The samples consisted of p-i-n diodes with a multiple quantum well embedded in the i-region and were simultaneously grown on (001) and (111)B substrates by molecular beam epitaxy. For the characterization we have used symmetric and asymmetric reflections at different azimuthal positions. The interpretation of the diffraction profiles has been possible thanks to our recently developed simulation model, which allows the calculation of any reflection regardless of the substrate orientation. X-ray results about composition and thickness are very similar in the samples simultaneously grown on both orientations as expected from our specific growth conditions. The information obtained from X-ray characterization is consistent with the results of photoluminescence and photocurrent measurements within the experimental uncertainty of the techniques. In (lll)B samples, X-ray diffractometry provides structural information which cannot be easily obtained from optical characterization techniques.

High-resolution grazing-incidence x-ray diffraction for characterization of defects in crystal surface layers

1997 ◽  
Vol 81 (1) ◽  
pp. 175-183 ◽  
Author(s):  
E. A. Kondrashkina ◽  
S. A. Stepanov ◽  
M. Schmidbauer ◽  
R. Opitz ◽  
R. Köhler ◽  
...  
Keyword(s):  
High Resolution ◽  
Crystal Surface ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Surface Layers ◽  
X Ray
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