Low Thermal Conductivities of Undoped and Various Protonic Acid-Doped Polyaniline Films

2000 ◽  
Vol 29 (4) ◽  
pp. 392-393 ◽  
Author(s):  
Hu Yan ◽  
Naonori Ohno ◽  
Naoki Toshima
1989 ◽  
Vol 173 ◽  
Author(s):  
Alan G. Macdiarmid ◽  
Arthur J. Epstein

ABSTRACTThe synthesis of polyaniline in its fully oxidized, fully reduced and selected average intermediate oxidation states is described together with the synthesis of a self-protonic acid doped polyaniline. The processing of polyaniline films and fibers by thermal stretching to give conductivities up to ∼100 S/cm is reported. Both doped and undoped polyaniline fibers have tensile strengths approaching those of commercial polymers.


2015 ◽  
Vol 12 (6) ◽  
pp. 576-579 ◽  
Author(s):  
J. G. Fernando ◽  
R. M. Vequizo ◽  
M. K. G. Odarve ◽  
B. R. B. Sambo ◽  
R. M. Malaluan ◽  
...  

Author(s):  
Veerabhadragouda B. Patil ◽  
Satish A. Ture ◽  
Channabasaveshwar V. Yelamaggad ◽  
Mallikarjuna N. Nadagouda ◽  
Abbaraju Venkataraman

2008 ◽  
Author(s):  
Vinodini Shaktawat ◽  
Narendra S. Saxena ◽  
Kananbala Sharma ◽  
Thaneshwar P. Sharma ◽  
P. Predeep ◽  
...  

1995 ◽  
Vol 413 ◽  
Author(s):  
Andrej N. Aleshin ◽  
Nikita B. Mironkov ◽  
Alexander V. Suvorov ◽  
Jeanine A. Conklint ◽  
Timothy M Su ◽  
...  

ABSTRACTThe electronic transport mechanism for ion implanted and chemically doped polyanilinefilms was investigated through temperature dependent dc conductivity measurements over thetemperature range 1.8 – 300K. Chemically synthesized emeraldine base polyaniline free-standingfilms (∼40 µm thick) were irradiated by Ar ions at an energy of 90 keV and doses ranging from 1 ×1014 to 3 × 1017 cm-2 to an estimated thickness of 100 nm. Chemical modification of Polyanilinefilms consisted of doping with 1.0 M H2SO4.Ion implantation and chemical doping were found to considerably increase the roomtemperature dc conductivity of polyaniline films reaching values up to 800 S cm-1and 8 S cm-1, respectively. Both ion irradiated and chemically doped polyaniline films exhibit p-type conduction.An increase in the irradiation dose increases the stability of the conducting layer compared tochemical doping. In both cases the samples are on the insulator side of the metal-insulatortransition, where cr(T) exhibits a common temperature dependent characteristic of the variablerange hopping (VRH) transport mechanism:σ(T) = σ (0) exp[ - (To / T)m ] (1)where m = 0.5 and To = 103 to 104K. The influence of electron-electron Coulomb the low temperature VRH of ion implanted and chemically doped polyanilCinoeu floilmmbs iisn tperreascetniotend


1999 ◽  
Vol 350 (1-2) ◽  
pp. 5-9 ◽  
Author(s):  
L.H Huo ◽  
L.X Cao ◽  
D.M Wang ◽  
H.N Cui ◽  
G.F Zeng ◽  
...  

2021 ◽  
Vol 260 ◽  
pp. 124083
Author(s):  
Rafael Marinho Bandeira ◽  
Daniel Roger Bezerra Amorim ◽  
Maria Letícia Vega ◽  
José Milton Elias de Matos ◽  
José Ribeiro dos Santos Júnior ◽  
...  

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