Electrical Properties of Ion Implanted and Chemically Doped Polyaniline Films

ABSTRACTThe electronic transport mechanism for ion implanted and chemically doped polyanilinefilms was investigated through temperature dependent dc conductivity measurements over thetemperature range 1.8 – 300K. Chemically synthesized emeraldine base polyaniline free-standingfilms (∼40 µm thick) were irradiated by Ar ions at an energy of 90 keV and doses ranging from 1 ×1014 to 3 × 1017 cm-2 to an estimated thickness of 100 nm. Chemical modification of Polyanilinefilms consisted of doping with 1.0 M H2SO4.Ion implantation and chemical doping were found to considerably increase the roomtemperature dc conductivity of polyaniline films reaching values up to 800 S cm-1and 8 S cm-1, respectively. Both ion irradiated and chemically doped polyaniline films exhibit p-type conduction.An increase in the irradiation dose increases the stability of the conducting layer compared tochemical doping. In both cases the samples are on the insulator side of the metal-insulatortransition, where cr(T) exhibits a common temperature dependent characteristic of the variablerange hopping (VRH) transport mechanism:σ(T) = σ (0) exp[ - (To / T)m ] (1)where m = 0.5 and To = 103 to 104K. The influence of electron-electron Coulomb the low temperature VRH of ion implanted and chemically doped polyanilCinoeu floilmmbs iisn tperreascetniotend

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Transport properties of ion-implanted and chemically doped polyaniline films

Physical Review B ◽

10.1103/physrevb.54.11638 ◽

1996 ◽

Vol 54 (16) ◽

pp. 11638-11643 ◽

Cited By ~ 28

Author(s):

A. N. Aleshin ◽

N. B. Mironkov ◽

A. V. Suvorov ◽

J. A. Conklin ◽

T. M. Su ◽

...

Keyword(s):

Transport Properties ◽

Polyaniline Films ◽

Doped Polyaniline ◽

Ion Implanted

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Extremely Thermal Stable Ni/W/TaSi2/Pt Simultaneous Ohmic Contacts to n-Type and p-Type 4H-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.924.401 ◽

2018 ◽

Vol 924 ◽

pp. 401-404 ◽

Cited By ~ 2

Author(s):

Yan Liang Li ◽

Yi Meng Zhang ◽

Xiao Yan Tang ◽

Tao Guo ◽

Yu Ming Zhang

Keyword(s):

Ohmic Contacts ◽

Specific Contact Resistance ◽

Platinum Silicide ◽

Specific Contact ◽

The Stability ◽

P Type ◽

Surface Morphologies ◽

Ion Implanted

Studying the ohmic contacts formed on ion-implanted SiC layers is fundamental to understand and to predict the behavior of practical devices. Ohmic contacts to n- (1×1019cm−3) and p-type (1×1020cm−3) ion-implanted 4H-SiC using Ni/W/TaSi2/Pt were investigated. No degradation of the specific contact resistance nor a minute change of the surface morphologies was observed after 300 h of 500 oC thermal treatment in air. From auger electron spectroscopy (AES) depth profiles, it was found that the oxidation of the protective platinum silicide overlayer significantly slowed down further migration of oxygen to the SiC interface. In addition, Pt and W played the role of mutual blocking, which guarantees the stability of the contact. This research suggests that the contacts are very promising for applications in harsh environments, where the simultaneously completed both on n-and p-type stability ohmic contacts is crucial.

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Towards highly conducting bicarbazole redox polymer films with plateau-like conductivities

Journal of Materials Chemistry C ◽

10.1039/d0tc03090b ◽

2020 ◽

Vol 8 (43) ◽

pp. 15393-15405

Author(s):

Claudia Malacrida ◽

Yushi Lu ◽

Klaus Dirnberger ◽

Sergio Gámez-Valenzuela ◽

M. Carmen Ruiz Delgado ◽

...

Keyword(s):

Polymer Films ◽

Electronic Devices ◽

Hole Transport ◽

Chemical Doping ◽

Redox Polymer ◽

Hole Transport Layers ◽

The Stability

Chemical doping of bicarbazole redox polymer films leads to plateau-conductivities up to 2 × 10−2 S cm−1. The stability due to crosslinking and the transparency make them e.g. suitable as hole-transport layers in organic opto-electronic devices.

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Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

MRS Proceedings ◽

10.1557/proc-4-689 ◽

1981 ◽

Vol 4 ◽

Cited By ~ 2

Author(s):

Douglas H. Lowndes ◽

Bernard J. Feldman

Keyword(s):

Radiative Recombination ◽

Laser Annealing ◽

Laser Energy ◽

Pulsed Laser ◽

High Dose ◽

Pulsed Laser Annealing ◽

Recombination Centers ◽

Pl Intensity ◽

P Type ◽

Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

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Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC

Semiconductor Science and Technology ◽

10.1088/0268-1242/18/6/328 ◽

2003 ◽

Vol 18 (6) ◽

pp. 554-559 ◽

Cited By ~ 24

Author(s):

F Moscatelli ◽

A Scorzoni ◽

A Poggi ◽

G C Cardinali ◽

R Nipoti

Keyword(s):

Ohmic Contacts ◽

Electrical Characterization ◽

P Type ◽

Ion Implanted

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On the Temperature Dependence of Resistivity of Polycrystalline Silicon Films

MRS Proceedings ◽

10.1557/proc-106-77 ◽

1987 ◽

Vol 106 ◽

Cited By ~ 3

Author(s):

Mark S. Rodder ◽

Dimitri A. Antoniadis

Keyword(s):

Numerical Calculation ◽

Polycrystalline Silicon ◽

Amorphous Region ◽

Defect States ◽

Temperature Dependent ◽

Step Process ◽

Dependent Potential ◽

Si Films ◽

Polycrystalline Silicon Films ◽

P Type

ABSTRACTIt is shown that the grain boundary (GB) in polycrystalline-silicon (poly-Si) films need not be modeled as a temperature-dependent potential barrier or as an amorphous region to explain the temperature (T) dependence of resistivity (ρ) in p-type poly-Si films at low T. Specifically, we consider that QB defect states allow for the tunneling component of current to occur by a two-step process. Incorporation of the two-step process in a numerical calculation of ρ vs. T results in excellent agreement with available data from 100 K to 300 K.

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Si1−xGex Bulk Crystals Growth and PN Junction Formation by Diffusing Phosphorus

MRS Proceedings ◽

10.1557/proc-607-321 ◽

1999 ◽

Vol 607 ◽

Author(s):

S. Kato ◽

T. Horikoshi ◽

T. Ohkubo ◽

T. Iida ◽

Y. Takano

Keyword(s):

Silicon Germanium ◽

Bulk Crystals ◽

Temperature Dependent ◽

Alloy Scattering ◽

Self Diffusion ◽

Pn Junction ◽

Current Voltage ◽

Vertical Bridgman ◽

Current Voltage Characteristics ◽

P Type

AbstractThe bulk crystal of silicon germanium was grown by vertical Bridgman method with germanium composition, x, varying from 0.6 to 1.0. The temperature dependent variation of the mobility is indicative of alloy scattering dominantly for the bulk wafer. Phosphorus was diffused in as-grown p-type bulk wafer at 850 °C to form pn-junction, and the diffusion coefficient of phosphorus was evaluated as a function of x. The diffusion behavior of phosphorus in silicon germanium is closely correlated with the germanium self-diffusion with changing x. For specimens with lower content x, P concentration profiles indicated “kink and tail” shape, while it was not observed for higher x. For current-voltage characteristics measurement, an ideality factor was obtained.

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Study on the Stability of the Electrical Connection of High-Temperature Pressure Sensor Based on the Piezoresistive Effect of P-Type SiC

Micromachines ◽

10.3390/mi12020216 ◽

2021 ◽

Vol 12 (2) ◽

pp. 216

Author(s):

Yongwei Li ◽

Ting Liang ◽

Cheng Lei ◽

Qiang Li ◽

Zhiqiang Li ◽

...

Keyword(s):

High Temperature ◽

Pressure Sensor ◽

Pressure Sensors ◽

Extreme Environment ◽

Maximum Temperature ◽

Piezoresistive Effect ◽

Electrical Connection ◽

Contact Stability ◽

The Stability ◽

P Type

In this study, a preparation method for the high-temperature pressure sensor based on the piezoresistive effect of p-type SiC is presented. The varistor with a positive trapezoidal shape was designed and etched innovatively to improve the contact stability between the metal and SiC varistor. Additionally, the excellent ohmic contact was formed by annealing at 950 °C between Ni/Al/Ni/Au and p-type SiC with a doping concentration of 1018cm−3. The aging sensor was tested for varistors in the air of 25 °C–600 °C. The resistance value of the varistors initially decreased and then increased with the increase of temperature and reached the minimum at ~450 °C. It could be calculated that the varistors at ~100 °C exhibited the maximum temperature coefficient of resistance (TCR) of ~−0.35%/°C. The above results indicated that the sensor had a stable electrical connection in the air environment of ≤600 °C. Finally, the encapsulated sensor was subjected to pressure/depressure tests at room temperature. The test results revealed that the sensor output sensitivity was approximately 1.09 mV/V/bar, which is better than other SiC pressure sensors. This study has a great significance for the test of mechanical parameters under the extreme environment of 600 °C.

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1/f Noise in Mott Variable Range Hopping Conduction in p-type Amorphous Silicon

MRS Proceedings ◽

10.1557/opl.2015.546 ◽

2015 ◽

Vol 1770 ◽

pp. 25-30 ◽

Cited By ~ 3

Author(s):

V.C. Lopes ◽

A.J. Syllaios ◽

D. Whitfield ◽

K. Shrestha ◽

C.L. Littler

Keyword(s):

Electrical Conductivity ◽

Amorphous Silicon ◽

Chemical Vapor ◽

Variable Range Hopping ◽

Temperature Dependent ◽

Noise Component ◽

Variable Range ◽

Noise Measurements ◽

P Type ◽

Hydrogenated Amorphous

ABSTRACTWe report on electrical conductivity and noise measurements made on p-type hydrogenated amorphous silicon (a-Si:H) thin films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD). The temperature dependent electrical conductivity can be described by the Mott Variable Range Hopping mechanism. The noise at temperatures lower than ∼ 400K is dominated by a 1/f component which follows the Hooge model and correlates with the Mott conductivity. At high temperatures there is an appreciable G-R noise component.

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Fabrication of plasmonic dye-sensitized solar cells using ion-implanted photoanodes

RSC Advances ◽

10.1039/c9ra02657f ◽

2019 ◽

Vol 9 (35) ◽

pp. 20375-20384 ◽

Cited By ~ 2

Author(s):

Navdeep Kaur ◽

Aman Mahajan ◽

Viplove Bhullar ◽

Davinder Paul Singh ◽

Vibha Saxena ◽

...

Keyword(s):

Solar Cells ◽

Ion Implantation ◽

Metal Nanoparticles ◽

Dye Sensitized Solar Cells ◽

Implantation Technique ◽

Dye Sensitized ◽

Stability Issue ◽

The Stability ◽

Sensitized Solar Cells ◽

Ion Implanted

Ion implantation technique can resolve the stability issue of metal nanoparticles with liquid iodine-based electrolyte to improve PCE of plasmonic dye-sensitized solar cells.

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