Research Progress of Quantum Well and Quantum Dot Lasers in the 1.5 μm Band

2021 ◽  
Vol 11 (04) ◽  
pp. 248-257
Author(s):  
兆悦 刘
2005 ◽  
Vol 41 (2) ◽  
pp. 117-126 ◽  
Author(s):  
D. Rodriguez ◽  
I. Esquivias ◽  
S. Deubert ◽  
J.P. Reithmaier ◽  
A. Forchel ◽  
...  

2000 ◽  
Vol 36 (11) ◽  
pp. 1272-1279 ◽  
Author(s):  
G.T. Liu ◽  
A. Stintz ◽  
H. Li ◽  
T.C. Newell ◽  
A.L. Gray ◽  
...  

2021 ◽  
Vol 8 ◽  
Author(s):  
Jia-Jian Chen ◽  
Zi-Hao Wang ◽  
Wen-Qi Wei ◽  
Ting Wang ◽  
Jian-Jun Zhang

A feedback insensitive laser is a prerequisite for a desirable laser source for silicon photonic integration, as it is not possible to include an on-chip optical isolator. This work investigates the feedback insensitivity of an InAs/GaAs quantum dot laser epitaxially grown on an Si (001) substrate by operating in a sole excited state. The experimental results show that the sole excited-state lasing InAs quantum dot lasers on Si are less sensitive to external optical feedback than both Fabry-Perot and distributed-feedback quantum-well lasers. By comparing the laser behavior under different feedback levels, sole excited-state InAs quantum dot lasers on Si exhibit at least a 28 dB stronger feedback tolerance than quantum-well lasers. This result proposes a possible route for a high feedback insensitive laser as an on-chip light source towards Si waveguide integration with the absence of an optical isolator.


2005 ◽  
Vol 891 ◽  
Author(s):  
Chongyang Y. Liu ◽  
Soon Fatt Yoon ◽  
Zhongzhe Z. Sun

ABSTRACTSelf-assembled GaInNAs/GaAsN single layer quantum dot (QD) lasers grown using solid source molecular beam epitaxy have been fabricated and characterized. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. High-temperature operation up to 65°C was demonstrated from an unbonded GaInNAs QD laser (50 × 1060 μm2), with high characteristic temperature (T0) of 79.4 K in the temperature range of 10-60°C. For comparison, temperature-dependent operation has also been studied on the GaInNAs single quantum well (SQW) lasers. Unlike the relation between the cavity length and T0 in GaInNAs SQW lasers, longer-cavity GaInNAs QD laser (50 × 1700 μm2) showed lower T0 of 65.1 K, which is presumably believed due to the nonuniformity of the GaInNAs QD layer.


2006 ◽  
Vol 376-377 ◽  
pp. 886-889 ◽  
Author(s):  
W.J. Choi ◽  
J.D. Song ◽  
J.I. Lee ◽  
K.C. Kim ◽  
T.G. Kim

Author(s):  
Robert W. Herrick ◽  
Daehwan Jung ◽  
Alan Liu ◽  
Justin Norman ◽  
Catherine Jan ◽  
...  

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