scholarly journals Tunable Band Gap of MoS2/BN van der Waals Heterostructures under an External Electric Field

2019 ◽  
Vol 135 (3) ◽  
pp. 391-395
Author(s):  
M. Luo ◽  
B. Yu ◽  
Y.H. Shen
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
External Electric Field ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Tunable Band Gap

scholarly journals Electric field tunable band-gap crossover in black(blue) phosphorus/g-ZnO van der Waals heterostructures

RSC Advances ◽  
2017 ◽  
Vol 7 (55) ◽  
pp. 34584-34590 ◽  
Author(s):  
Wei Zhang ◽  
Lifa Zhang
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
Electric Field ◽  
Band Gap ◽  
Density Functional Calculations ◽  
Density Functional ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Hybrid Density Functional ◽  
Tunable Band Gap

Using hybrid density functional calculations, we studied the electronic and optical properties of graphitic zinc oxide (g-ZnO) and phosphorene van der Waals (vdW) heterostructures.

scholarly journals Effect of an external electric field on the electronic properties of SnS2/PbI2 van der Waals heterostructures

RSC Advances ◽  
2017 ◽  
Vol 7 (41) ◽  
pp. 25582-25588 ◽  
Author(s):  
Yaqiang Ma ◽  
Xu Zhao ◽  
Mengmeng Niu ◽  
Xianqi Dai ◽  
Wei Li ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
Future Development ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Control Technology ◽  
Van Der Waals Heterostructures ◽  
Advanced Control ◽  
The Future

The future development of optoelectronic devices will require an advanced control technology in electronic properties, for example by an external electric field (Efield).

Tunable electronic properties in the van der Waals heterostructure of germanene/germanane

2015 ◽  
Vol 17 (18) ◽  
pp. 12194-12198 ◽  
Author(s):  
Run-wu Zhang ◽  
Chang-wen Zhang ◽  
Wei-xiao Ji ◽  
Feng Li ◽  
Miao-juan Ren ◽  
...  
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Electronic Properties ◽  
External Electric Field ◽  
High Performance ◽  
Room Temperature ◽  
Van Der Waals ◽  
Van Der Waals Heterostructure ◽  
Structural And Electronic Properties

We investigate the structural and electronic properties of germanene/germanane heterostructures. The band gap in these heterostructures can be effectively modulated by the external electric field and strain. These results provide a route to design high-performance FETs operating at room temperature in nanodevices.

scholarly journals Mg(OH)2−WS2 van der Waals heterobilayer: Electric field tunable band-gap crossover

2016 ◽  
Vol 94 (19) ◽  
Author(s):  
M. Yagmurcukardes ◽  
E. Torun ◽  
R. T. Senger ◽  
F. M. Peeters ◽  
H. Sahin
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Van Der Waals ◽  
Tunable Band Gap

Electrically tunable band gap in strained h-BN/silicene van der Waals heterostructures

2021 ◽  
Author(s):  
Douglas D. de Vargas ◽  
Mateus H. Köhler ◽  
Rogério J. Baierle
Keyword(s):  
Band Gap ◽  
Electric Fields ◽  
Compressive Strain ◽  
Van Der Waals ◽  
Charge Redistribution ◽  
Van Der Waals Heterostructures ◽  
External Electric Fields ◽  
Orbital Hybridization ◽  
Tunable Band Gap

The charge redistribution and orbital hybridization due to external electric fields and compressive strain are very promising for silicene-based nanoelectronics.

Tunable band gap and high carrier mobility in stanene by small organic molecule adsorption and external electric field

2021 ◽  
Author(s):  
Meixia Xiao ◽  
Xiao Shao ◽  
Hai Yang Song ◽  
Zhao Li ◽  
Minrong An ◽  
...  
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Electronic Properties ◽  
External Electric Field ◽  
Carrier Mobility ◽  
Organic Molecule ◽  
Small Organic Molecule ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Tunable Band Gap

The effects of small organic molecule (SOM) adsorption with benzene (C6H6), hexafluorobenzene (C6F6), and p‒difluorobenzene (C6H4F2) on the electronic properties of stanene under the external electric field are investigated through...

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