scholarly journals Mg(OH)2−WS2 van der Waals heterobilayer: Electric field tunable band-gap crossover

2016 ◽  
Vol 94 (19) ◽  
Author(s):  
M. Yagmurcukardes ◽  
E. Torun ◽  
R. T. Senger ◽  
F. M. Peeters ◽  
H. Sahin
RSC Advances ◽  
2017 ◽  
Vol 7 (55) ◽  
pp. 34584-34590 ◽  
Author(s):  
Wei Zhang ◽  
Lifa Zhang

Using hybrid density functional calculations, we studied the electronic and optical properties of graphitic zinc oxide (g-ZnO) and phosphorene van der Waals (vdW) heterostructures.


2018 ◽  
Vol 20 (42) ◽  
pp. 26934-26946 ◽  
Author(s):  
Jiangni Yun ◽  
Yanni Zhang ◽  
Yanbing Ren ◽  
Manzhang Xu ◽  
Junfeng Yan ◽  
...  

Stacking sequences, external strain and a vertical electric field can be used to effectively modulate the electronic structures of graphyne-based homo- and hetero-structures.


2015 ◽  
Vol 17 (18) ◽  
pp. 12194-12198 ◽  
Author(s):  
Run-wu Zhang ◽  
Chang-wen Zhang ◽  
Wei-xiao Ji ◽  
Feng Li ◽  
Miao-juan Ren ◽  
...  

We investigate the structural and electronic properties of germanene/germanane heterostructures. The band gap in these heterostructures can be effectively modulated by the external electric field and strain. These results provide a route to design high-performance FETs operating at room temperature in nanodevices.


2021 ◽  
Vol 2021 ◽  
pp. 1-8
Author(s):  
Gang Xu ◽  
Hao Lei

The electronic structure of GaSe/silicane (GaSe/SiH) van der Waals (vdW) heterostructure in response to a vertical electric field and strain was studied via first-principle calculations. The heterostructure had indirect band gap characteristics in the range [−1.0, −0.4] V/Å and direct band gap features in the range [−0.3, 0.2] V/Å. Furthermore, a type-II to type-I band alignment transition appeared at −0.7 and −0.3 V/Å. Additionally, the GaSe/SiH vdW heterostructure had a type-II band alignment under strain, but an indirect to direct band gap semiconductor transition occurred at −3%. These results indicated that the GaSe/SiH vdW heterostructure may have applications in novel nanoelectronic and optoelectronic devices.


Author(s):  
Douglas D. de Vargas ◽  
Mateus H. Köhler ◽  
Rogério J. Baierle

The charge redistribution and orbital hybridization due to external electric fields and compressive strain are very promising for silicene-based nanoelectronics.


Author(s):  
Meixia Xiao ◽  
Xiao Shao ◽  
Hai Yang Song ◽  
Zhao Li ◽  
Minrong An ◽  
...  

The effects of small organic molecule (SOM) adsorption with benzene (C6H6), hexafluorobenzene (C6F6), and p‒difluorobenzene (C6H4F2) on the electronic properties of stanene under the external electric field are investigated through...


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