scholarly journals Experimental Study and Modeling of Silicon Supersaturated with Selenium by Ion Implantation and Nanosecond-Laser Melting

2019 ◽  
Vol 136 (2) ◽  
pp. 254-259
Author(s):  
F.F. Komarov ◽  
G. Ivlev ◽  
G. Zayats ◽  
A. Komarov ◽  
N. Nechaev ◽  
...  
Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4138
Author(s):  
Ye Yuan ◽  
Yufang Xie ◽  
Ning Yuan ◽  
Mao Wang ◽  
René Heller ◽  
...  

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.


2014 ◽  
Vol 12 (s2) ◽  
pp. S21409-321414
Author(s):  
Xianhua Yin Xianhua Yin ◽  
Yifei Zhuang Yifei Zhuang ◽  
Yan Zhang Yan Zhang ◽  
Guowen Zhang Guowen Zhang ◽  
Xingqiang Lu Xingqiang Lu ◽  
...  

2019 ◽  
Vol 43 ◽  
pp. 26-35 ◽  
Author(s):  
Shanshan Zhang ◽  
Santosh Rauniyar ◽  
Subin Shrestha ◽  
Aaron Ward ◽  
Kevin Chou

Sign in / Sign up

Export Citation Format

Share Document