Superconductivity, Charge Orderings and Phase Separations in Systems with Local Electron Pairing

The extended local vibronic constant (ELVC) is introduced for the study of the strength of local electron pairing for superconductivity based on vibronic interaction using a model of an oxygen-containing organic polymer. The ELVC consists of the electrostatic part and the two-electron part, which originates in the response of the electron density to the nuclear vibration. It is found that the two-electron part has opposite sign to, and almost the same magnitude as, that of the electrostatic part. The difference between the ELVC and the Fock matrix derivative, which is related to the derivative of the Hückel parameters used as the electron–phonon coupling constant, is discussed. The vibronic interaction in the in-plane orbitals, which is characteristic of the interaction in a two-dimensional conductor, is also discussed. Keywords: vibronic interaction, superconductivity, local electron pairing, extended local vibronic constant, abinitio calculation.

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Tc calculation of disordered superconductor with local electron pairing

Physica C Superconductivity ◽

10.1016/0921-4534(92)90559-u ◽

1992 ◽

Vol 199 (1-2) ◽

pp. 191-200 ◽

Cited By ~ 10

Author(s):

G Litak ◽

K.I Wysokiński ◽

R Micnas ◽

S Robaszkiewicz

Keyword(s):

Local Electron ◽

Electron Pairing

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SUPERCONDUCTIVITY WITH LOCAL ELECTRON PAIRING

Le Journal de Physique Colloques ◽

10.1051/jphyscol:19888996 ◽

1988 ◽

Vol 49 (C8) ◽

pp. C8-2221-C8-2226 ◽

Cited By ~ 4

Author(s):

R. Micnas ◽

J. Ranninger ◽

S. Robaszkiewicz

Keyword(s):

Local Electron ◽

Electron Pairing

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Lithography below 100 nm

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100074367 ◽

1983 ◽

Vol 41 ◽

pp. 96-99

Author(s):

L. D. Jackel

Keyword(s):

Spatial Distribution ◽

Electron Beam ◽

Electron Scattering ◽

Electron Beam Lithography ◽

Substrate Material ◽

Local Electron ◽

Electron Dose ◽

Positive Resist ◽

Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

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