METHOD OF CALCULATION OF TOTAL ELECTRON SCATTERING PROBABILITY ON LONG-WAVE PHONONS

10.12737/6384 ◽  
2014 ◽  
Vol 2 (5) ◽  
pp. 209-211
Author(s):  
R. Gushchin ◽  
D. Zavyalov ◽  
V. Konchenkov
Keyword(s):  
Electron Scattering ◽  
Total Electron ◽  
Method Of Calculation ◽  
Long Wave ◽  
Scattering Probability

Total electron scattering cross-sections for carbon monoxide at low electron energies

Pramana ◽  
1998 ◽  
Vol 51 (3-4) ◽  
pp. 453-461 ◽  
Author(s):  
P. Rawat ◽  
K. P. Subramanian ◽  
Vijay Kumar
Keyword(s):  
Carbon Monoxide ◽  
Electron Scattering ◽  
Cross Sections ◽  
Total Electron ◽  
Scattering Cross ◽  
Scattering Cross Sections

Total Electron Scattering Cross Sections for Simple Perfluorocarbons

2003 ◽  
Vol 72 (5) ◽  
pp. 1080-1086 ◽  
Author(s):  
Hiroyuki Nishimura ◽  
Fumio Nishimura ◽  
Yoshiharu Nakamura ◽  
Keisuke Okuda
Keyword(s):  
Electron Scattering ◽  
Cross Sections ◽  
Total Electron ◽  
Scattering Cross ◽  
Scattering Cross Sections

Model of Electron Scattering of Strained Si /Si1-xGex (100)

2011 ◽  
Vol 110-116 ◽  
pp. 3338-3342
Author(s):  
Jian Jun Song ◽  
Hua Ying Wu ◽  
He Ming Zhang ◽  
Hui Yong Hu ◽  
Heng Sheng Shan
Keyword(s):  
Electron Scattering ◽  
Electron Mobility ◽  
Acoustic Phonon ◽  
Golden Rule ◽  
Collision Term ◽  
Strained Si ◽  
Total Electron ◽  
Total Scattering ◽  
Scattering Rate ◽  
Term Approximation

Based on Fermi's golden rule and the theory of Boltzmann collision term approximation, taking into account all the scattering mechanisms contributed by ionized impurity, acoustic phonon and intervalley phonon, the model of total scattering rate of strained Si/(100) Si1-xGex is established. Simulating of the scattering models with Matlab software, it was found that the total scattering rate of electron in strained Si/(100) Si1-xGex decreases obviously with the increasing stress when Ge fraction x is less than 0.2 and the values continue to show a constant tendency, and that the total electron scattering rate of strained Si/(100) Si1-xGex decreases about 57% at most comparison with one of unstrained Si. The result can provide valuable references to the research of electron mobility of strained Si materials and the design of NMOS devices.

scholarly journals Total electron scattering cross sections from thiophene for the (1-300 eV) impact energy range

2018 ◽  
Vol 149 (13) ◽  
pp. 134303 ◽  
Author(s):  
A. I. Lozano ◽  
A. Loupas ◽  
F. Blanco ◽  
J. D. Gorfinkiel ◽  
G. García
Keyword(s):  
Energy Range ◽  
Electron Scattering ◽  
Cross Sections ◽  
Impact Energy ◽  
Total Electron ◽  
Scattering Cross ◽  
Scattering Cross Sections

scholarly journals Experimental and theoretical analysis for total electron scattering cross sections of benzene

2019 ◽  
Vol 151 (8) ◽  
pp. 084310 ◽  
Author(s):  
F. Costa ◽  
L. Álvarez ◽  
A. I. Lozano ◽  
F. Blanco ◽  
J. C. Oller ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Electron Scattering ◽  
Cross Sections ◽  
Total Electron ◽  
Scattering Cross ◽  
Scattering Cross Sections

scholarly journals Total Electron Scattering Cross Sections of He, Ne, Ar, Kr and Xe in the Energy Range 100 eV to 10 000 eV

2009 ◽  
Vol 64 (9-10) ◽  
pp. 665-670
Author(s):  
Xiao-Ming Tan ◽  
Chuan-Lu Yang ◽  
Mei-Shan Wang ◽  
Zhi-Hong Zhang
Keyword(s):  
Energy Range ◽  
Electron Scattering ◽  
Cross Sections ◽  
Model Potential ◽  
Total Electron ◽  
Total Cross Sections ◽  
Optical Model Potential ◽  
Scattering Cross Sections ◽  
Experimental And Theoretical Studies ◽  
Theoretical Results

The total cross sections for electron scattering from He, Ne, Ar, Kr and Xe in the energy range from 100 eV to 10 000 eV have been calculated based on the optical-model potential. Our theoretical results are compared with the available experimental data. The consistency between them is also discussed. At higher energies (over 2000 eV for He, over 5000 eV for Ne, Ar, Kr and Xe), the total cross sections of electron scattering from these atoms are scarce, so our calculations will give a reference for further experimental and theoretical studies.

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