scholarly journals The effects of calcination and doping on structural and dielectric properties of CaCu3-xCoxTi4O12 ceramic

2019 ◽  
Vol 8 (3) ◽  
pp. 234
Author(s):  
Nasr Hadi ◽  
Tajdine Lamcharfi ◽  
Farid Abdi ◽  
Nor-Said Echtoui ◽  
Ahmed Harrach ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Complex Impedance ◽  
Impedance Analysis ◽  
Xrd Analysis ◽  
Secondary Phases ◽  
Solid State Method ◽  
Complex Impedance Analysis ◽  
Oxide Powders ◽  
Increasing Temperature

<p class="Abstract"><span lang="EN-US">The influences of calcination temperature and doping with cobalt in A–site on structural and dielectric properties of CaCu<sub>3-x</sub>Co<sub>x</sub>Ti<sub>4</sub>O<sub>12</sub> (CCCxTO, x = 0.00, 0.02 and 0.10) ceramics sintered at 1050 <sup>0</sup>C for 8h were investigated. The ceramic samples are prepared by the conventional solid-state method using high purity oxide powders, and they are calcined at 850 °C, 950 °C and 1050 <sup>0</sup>C for 4h. The X-ray diffraction (XRD) analysis of pure and doped CCTO samples calcined at 950 °C and 1050 <sup>0</sup>C showed no traces of any other secondary phases, while impurity phases alongside CCTO phase in the x=0.00 sample calcined at 850 <sup>0</sup>C was observed. Scanning electron microscopy (SEM) investigation showed an increase in grain size with increasing of Co content and calcining temperature. Dielectric measurements indicated that the dielectric constant of the pure CCTO calcined at 1050 <sup>0</sup>C/4h has a low value in the frequency range of 1kHz up to 1MHz, whereas the substitution of Co up to x = 0.10 into CCTO caused a huge increase in the dielectric constant value of the calcined samples which is equal to 153419 and 18957 at 950 <sup>°</sup>C and 1050 <sup>0</sup>C respectively. The complex impedance analysis of all samples shows a decrease in resistance with an increasing temperature, which suggests a semiconductor nature of the samples.</span></p>

scholarly journals The effects of calcination and doping on structural and dielectric properties of CaCu3-xCoxTi4O12 ceramic

2019 ◽  
Vol 8 (3) ◽  
pp. 234-244
Author(s):  
Nasr Hadi ◽  
Tajdine Lamcharfi ◽  
Farid Abdi ◽  
Nor-Said Echtoui ◽  
Ahmed Harrach ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Complex Impedance ◽  
Impedance Analysis ◽  
Xrd Analysis ◽  
Secondary Phases ◽  
Solid State Method ◽  
Complex Impedance Analysis ◽  
Oxide Powders ◽  
Increasing Temperature

The influences of calcination temperature and doping with cobalt in A–site on structural and dielectric properties of CaCu3-xCoxTi4O12 (CCCxTO, x = 0.00, 0.02 and 0.10) ceramics sintered at 1050 0C for 8h were investigated. The ceramic samples are prepared by the conventional solid-state method using high purity oxide powders, and they are calcined at 850 °C, 950 °C and 1050 0C for 4h. The X-ray diffraction (XRD) analysis of pure and doped CCTO samples calcined at 950 °C and 1050 0C showed no traces of any other secondary phases, while impurity phases alongside CCTO phase in the x=0.00 sample calcined at 850 0C was observed. Scanning electron microscopy (SEM) investigation showed an increase in grain size with increasing of Co content and calcining temperature. Dielectric measurements indicated that the dielectric constant of the pure CCTO calcined at 1050 0C/4h has a low value in the frequency range of 1kHz up to 1MHz, whereas the substitution of Co up to x = 0.10 into CCTO caused a huge increase in the dielectric constant value of the calcined samples which is equal to 153419 and 18957 at 950 °C and 1050 0C respectively. The complex impedance analysis of all samples shows a decrease in resistance with an increasing temperature, which suggests a semiconductor nature of the samples.

scholarly journals Effect of barium doping on electrical and electromechanical properties of (1-x)(Na0.5Bi0.5)TiO3-xBaTiO3

2019 ◽  
Vol 8 (3) ◽  
pp. 198-208
Author(s):  
Mohammed Mesrar ◽  
Tajdine Lamcharfi ◽  
Nor-Said Echatoui ◽  
Farid Abdi ◽  
Fatima Zahra Ahjyaje ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Complex Impedance ◽  
Impedance Analysis ◽  
Xrd Analysis ◽  
Secondary Phases ◽  
Solid State Method ◽  
Complex Impedance Analysis ◽  
Oxide Powders ◽  
Increasing Temperature ◽  
A Site

The influences of calcination temperature and doping with cobalt in A–site on structural and dielectric properties of CaCu3-xCoxTi4O12 (CCCxTO, x = 0.00, 0.02 and 0.10) ceramics sintered at 1050 0C for 8h were investigated. The ceramic samples are prepared by the conventional solid-state method using high purity oxide powders, and they are calcined at 850 °C, 950 °C and 1050 0C for 4h. The X-ray diffraction (XRD) analysis of pure and doped CCTO samples calcined at 950 °C and 1050 0C showed no traces of any other secondary phases, while impurity phases alongside CCTO phase in the x=0.00 sample calcined at 850 0C was observed. Scanning electron microscopy (SEM) investigation showed an increase in grain size with increasing of Co content and calcining temperature. Dielectric measurements indicated that the dielectric constant of the pure CCTO calcined at 1050 0C/4h has a low value in the frequency range of 1kHz up to 1MHz, whereas the substitution of Co up to x = 0.10 into CCTO caused a huge increase in the dielectric constant value of the calcined samples which is equal to 153419 and 18957 at 950 °C and 1050 0C respectively. The complex impedance analysis of all samples shows a decrease in resistance with an increasing temperature, which suggests a semiconductor nature of the samples

Electric–dielectric properties and complex impedance analysis of La0.5Ca0.5−xAgxMnO3 manganites

RSC Advances ◽  
2015 ◽  
Vol 5 (3) ◽  
pp. 2177-2184 ◽  
Author(s):  
M. Smari ◽  
H. Rahmouni ◽  
N. Elghoul ◽  
I. Walha ◽  
E. Dhahri ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Impedance Spectroscopy ◽  
Complex Impedance ◽  
Impedance Analysis ◽  
Spectroscopy Technique ◽  
Complex Impedance Analysis ◽  
Impedance Spectroscopy Technique

The electric and dielectric properties of La0.5Ca0.5−xAgxMnO3 (LCMO–Ag with x = 0 and x = 0.4) were investigated using the impedance spectroscopy technique.

An intensive study on the AC impedance mechanism of (AgPO3)1-x(Ag2SO4)x ionic glass systems under various conditions

2019 ◽  
Vol 16 (4) ◽  
pp. 477-486
Author(s):  
Atif Alkhazali ◽  
Morad Etier ◽  
Mohammad Aljarrah ◽  
Akram Alsukker ◽  
Fathy Salman
Keyword(s):  
Complex Impedance ◽  
Entropy Change ◽  
Impedance Analysis ◽  
Cole Plot ◽  
X Ray Diffraction ◽  
Content Type ◽  
Activation Free Energy ◽  
Complex Impedance Analysis ◽  
Different Temperatures ◽  
Increasing Temperature

Purpose The purpose of this study is to investigate the effect of the considerable Ag2SO4 content on the electrical and dielectric properties of (AgPO3)1−x(Ag2SO4)x ion glass system as well as to extract thermodynamic parameters. Design/methodology/approach Glass samples of (AgPO3)1-x(Ag2SO4)x with different mole ratios of Ag2SO4 [x = 0.00, 0.10,0.15,0.20 and 0.25] have been synthesized and used. X-ray diffraction and differential thermal analysis were used to investigate structural and thermal properties, and then the electrical characterizations of the bulk glasses were performed in different frequency and temperature range. Findings For different ratios of Ag2SO4 on AgPO3, the bulk conductivity is enhanced with increasing the amount of Ag2SO4 until the composition of x = 0.20, after which the conductivity decreases. The general behavior of both ε’ and ε” decreases with increasing frequency and increases with increasing temperature. Complex impedance analysis studied by Z‘−Z’ and Cole–Cole plot at different temperatures revealed that bulk resistance decreases with temperature. Originality/value The calculated values of activation free energy, enthalpy and entropy change for different compositions of (AgPO3)1-x(Ag2SO4)x showed an increase in activation energy and enthalpy when Ag2SO4 ratio is increased in (AgPO3)1-x(Ag2SO4)x composition up to 20%, and then there is a decrease in their values at x = 25%, which may be explained based on non-bridging oxygen.

scholarly journals Dielectric, ferroelectrics properties and impedance spectroscopy analysis of the [(Na0.535K0.480)0.966Li0.058](Nb0.90Ta0.10)O3-based lead-free ceramics

2015 ◽  
Vol 05 (01) ◽  
pp. 1550007 ◽  
Author(s):  
M. Saidi ◽  
A. Chaouchi ◽  
S. D'Astorg ◽  
M. Rguiti ◽  
C. Courtois
Keyword(s):  
Complex Impedance ◽  
Negative Temperature ◽  
Impedance Analysis ◽  
Xrd Analysis ◽  
Ac Impedance ◽  
Nyquist Plot ◽  
X Ray Diffraction ◽  
Complex Impedance Analysis ◽  
Lead Free Ceramics ◽  
Different Temperatures

Polycrystalline of [( Na 0.535 K 0.480)0.966 Li 0.058] (Nb 0.90 Ta 0.10) O 3 samples were prepared using the high-temperature solid-state reaction technique. X-ray diffraction (XRD) analysis indicates the formation of a single-phase with orthorhombic structure. AC impedance plots were used as tool to analyze the electrical behavior of the sample as a function of frequency at different temperatures. The AC impedance studies revealed the presence of grain effect, from 425°C onwards. Complex impedance analysis indicated non-Debye type dielectric relaxation. The Nyquist plot showed the negative temperature coefficient of resistance (NTCR) characteristic of NKLNT. The AC conductivity results were used to correlate with the barrier hopping (CBH) model to evaluate the binding energy (Wm), the minimum hopping distance (R min ), the density of states at Fermi level (N(Ef)), and the activation energy of the compound.

Structural and Impedance Analysis of 0.7Pb(Mg1/3Nb2/3)O3- 0.3PbTiO3 Ceramic

2021 ◽  
Vol 13 ◽  
Author(s):  
Jayanta Kumar Mishra ◽  
Khusboo Agrawal ◽  
Banarji Behera
Keyword(s):  
Electrical Properties ◽  
Short Range ◽  
Complex Impedance ◽  
Relaxation Effect ◽  
Impedance Analysis ◽  
Xrd Analysis ◽  
Nyquist Plot ◽  
Space Group ◽  
Complex Impedance Analysis ◽  
Mobility Of Charge Carriers

Background: Since (1-x)[Pb(Mg1/3Nb2/3)O3]-(x)PbTiO3 (PMN-PT) ceramic has high dielectric constant and piezoelectric coefficient, it has been widely investigated for profound applications in electro-optical devices, sensors, multilayer capacitors and actuators. Objectives: The aim is to study the structural and electrical properties of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (0.7PMN-0.3PT) ceramic to understand the biphasic structural nature using Rietveld Refinement. Also, it characterises on the basis of electrical properties such as impedance and modulus to understand the relaxation process, type of conduction process as well as the role of grain and grain boundary resistance in the material. Methods: 0.7PMN-0.3PT is synthesised by mixed oxide method using PbO, MgO, Nb2O5 and TiO2 as precursor materials. Results: The XRD data reveals the biphasic structure of tetragonal phase with the space group of P4mm and monoclinic phase with the space group of Pm. The complex impedance analysis clearly represents the effect of grain on the overall resistance and departs from normal Debye type behaviour. Also, the resistance is found to decrease with temperature, thereby confirming the semiconducting nature of the sample. The presence of long as well as short-range mobility of charge carriers is confirmed from the modulus and impedance analysis. The influence of long-range motion is observed at high temperature and of short-range motion at low temperatures. Conclusion: XRD analysis confirmed the biphasic structure of M+T phase. The frequency-dependent modulus and impedance spectroscopy show the presence of a relaxation effect in the ceramic which is found to increase with temperature. The Nyquist plot shows that the resistance is decreased with temperature, thereby confirming the NTCR behaviour in the studied sample.

scholarly journals Effect of Zinc Doping on the Electrical and Dielectric Properties of CCTO Compound Synthesized by Solid-State Method

2021 ◽  
Vol 33 (9) ◽  
pp. 2000-2006
Author(s):  
M. Slaoui ◽  
N. Gouitaa ◽  
Y. El Issmaeli ◽  
A. Harrach ◽  
F. Abdi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Solid State ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Solid State Method ◽  
X Ray ◽  
Zn Concentration ◽  
Zinc Doping ◽  
Electrical And Dielectric Properties

In this work, the influence of zinc doping on structural and dielectric properties of CaCu(3-x)ZnxTi4O12 (CCZxTO with x = 0, 2.5, 5, 7.5, 10, 12.5 and 15%) ceramics sintered at 1000 ºC for 8 h was studied. The ceramic samples were prepared by the conventional solid-state and calcined at 1050 ºC for 4 h. The X-ray diffraction (XRD) analysis of pure and Zn-doped CCTO were analyzed by using Rietveld refinement with cubic CCTO phase with no trace impurity phase. The scanning electron microscopy (SEM) investigation showed that for Zn-doped CCTO, the grains distributions were homogenous with average sizes which decreased with increasing of Zn concentration. The dielectric permittivity as function of temperature showed two dielectric anomalies (weakly and strong) and the dielectric constant value largely decreased for x = 2.5%, which is about tree magnitude smaller than the pure ceramic. Then it increased and reached a maximum at x = 10%, which is larger than the value of pure ceramic. And for x > 10%, the dielectric constant decreased for about two magnitude smaller than the ceramic at x = 10%. The cole-cole diagramm for all the samples showed existence of two semi-arcs attributed to the grains and grains boundaries. It was found that the Rg values were much smaller than the Rgb value. This give an evidance on the formation of interior barrier layer capacity (IBLC).

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