Role of ions in SiO2 deposition with pulsed and continuous helicon plasmas

Good-quality silicon dioxide films have been deposited at low temperature (200 °C) using continuous and pulsed oxygen/silane plasmas coupled in a high-density, low-pressure helicon reactor. Although the total ion flux determines many of the structural properties of the deposited oxide, we have found that silicon-containing ions contribute to the film growth (up to 50 %) and appear to be responsible for the measured compressive stress.

Download Full-text

Low-temperature deposition of silicon dioxide films in high-density plasma

Semiconductor Physics Quantum Electronics & Optoelectronics ◽

10.15407/spqeo16.02.216 ◽

2013 ◽

Vol 16 (2) ◽

pp. 216-219 ◽

Cited By ~ 2

Author(s):

A. Yasunas ◽

Keyword(s):

Low Temperature ◽

Silicon Dioxide ◽

High Density ◽

Low Temperature Deposition ◽

Silicon Dioxide Films ◽

Temperature Deposition ◽

Density Plasma

Download Full-text

Low Temperature Synthesis and Characterization of Silicon Dioxide Films

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 ◽

10.1007/978-1-4899-1588-7_18 ◽

1993 ◽

pp. 165-174 ◽

Cited By ~ 1

Author(s):

G. S. Chakravarthy ◽

R. A. Levy ◽

J. M. Grow ◽

W. M. Attia

Keyword(s):

Low Temperature ◽

Silicon Dioxide ◽

Synthesis And Characterization ◽

Low Temperature Synthesis ◽

Temperature Synthesis ◽

Silicon Dioxide Films

Download Full-text

Use of Low-Temperature Deposited Silicon Dioxide Films As Diffusion Masks in GaAs

Journal of The Electrochemical Society ◽

10.1149/1.2426047 ◽

1964 ◽

Vol 111 (1) ◽

pp. 120 ◽

Cited By ~ 17

Author(s):

S.W. Ing ◽

W. Davern

Keyword(s):

Low Temperature ◽

Silicon Dioxide ◽

Silicon Dioxide Films

Download Full-text

Development of Low Temperature Silicon Nitride and Silicon Dioxide Films by Inductively-Coupled Plasma Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-573-69 ◽

1999 ◽

Vol 573 ◽

Cited By ~ 4

Author(s):

J. W. Lee ◽

K. D. Mackenzie ◽

D. Johnson ◽

S. J. Pearton ◽

F. Ren ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Low Temperature ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Inductively Coupled Plasma ◽

Chemical Vapor ◽

Plasma Chemical Vapor Deposition ◽

Inductively Coupled ◽

Silicon Dioxide Films

ABSTRACTHigh-density plasma technology is becoming increasingly attractive for the deposition of dielectric films such as silicon nitride and silicon dioxide. In particular, inductively-coupled plasma chemical vapor deposition (ICPCVD) offers a great advantage for low temperature processing over plasma-enhanced chemical vapor deposition (PECVD) for a range of devices including compound semiconductors. In this paper, the development of low temperature (< 200°C) silicon nitride and silicon dioxide films utilizing ICP technology will be discussed. The material properties of these films have been investigated as a function of ICP source power, rf chuck power, chamber pressure, gas chemistry, and temperature. The ICPCVD films will be compared to PECVD films in terms of wet etch rate, stress, and other film characteristics. Two different gas chemistries, SiH4/N2/Ar and SiH4/NH3/He, were explored for the deposition of ICPCVD silicon nitride. The ICPCVD silicon dioxide films were prepared from SiH4/O2/Ar. The wet etch rates of both silicon nitride and silicon dioxide films are significantly lower than films prepared by conventional PECVD. This implies that ICPCVD films prepared at these low temperatures are of higher quality. The advanced ICPCVD technology can also be used for efficient void-free filling of high aspect ratio (3:1) sub-micron trenches.

Download Full-text

On the structure of low-temperature PECVD silicon dioxide films

Journal of Electronic Materials ◽

10.1007/bf02673345 ◽

1990 ◽

Vol 19 (11) ◽

pp. 1299-1301 ◽

Cited By ~ 16

Author(s):

R. A. B. Devine

Keyword(s):

Low Temperature ◽

Silicon Dioxide ◽

Silicon Dioxide Films

Download Full-text

Properties of silicon dioxide films prepared by low-pressure chemical vapor deposition from tetraethylorthosilicate

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584937 ◽

1990 ◽

Vol 8 (6) ◽

pp. 1177 ◽

Cited By ~ 32

Author(s):

S. Rojas

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Dioxide Films ◽

Pressure Chemical

Download Full-text

Low Temperature Deposited Highly-Conductive N-type SiC Thin Films

MRS Proceedings ◽

10.1557/proc-472-463 ◽

1997 ◽

Vol 472 ◽

Author(s):

Kuan-Lun Cheng ◽

Huang-Chung Cheng ◽

Wen-Horng Lee ◽

Chiapyng Lee ◽

Tri-Rung Yew

Keyword(s):

Low Temperature ◽

Film Growth ◽

Thin Film Transistor ◽

Impurity Scattering ◽

Gas Analyzer ◽

Flow Rates ◽

Sic Film ◽

Dopant Source ◽

Sic Films

ABSTRACTLow-temperature deposited highly-conductive SiC films has long been a goal for many researchers involved in hetero-junction bipolar transistor, thin-film transistor, solar cell.… etc. Here in this paper, we study the influences of the diluted PH3 flow rates on SiC film quality as well as electrical properties. PH+ was determined from residual gas analyzer to be the main dopant source. Phosphorous atoms will play a role of enhancing the SiC grain growth and resulting in a smaller film growth rate. Carrier concentrations increase monotonically with the diluted PH3 flow rates. While Hall mobility first increases than decreases with it due to a combination effect of the impurity scattering and a film quality improvement which dominates when the 1% PH3/H2 flow rate is above or below 40 seem, respectively.

Download Full-text