Statistical theory for self-condensing vinyl polymerization system with any initial distribution

2013 ◽  
Vol 43 (11) ◽  
pp. 1505-1511 ◽  
Author(s):  
XiaoZhong HONG ◽  
Fang GU ◽  
HaiJun WANG ◽  
XinWu BA
Keyword(s):  
Statistical Theory ◽  
Initial Distribution ◽  
Vinyl Polymerization ◽  
Polymerization System

The radius of gyration for a ternary self-condensing vinyl polymerization system

2015 ◽  
Vol 58 (12) ◽  
pp. 1875-1883 ◽  
Author(s):  
Xiaozhong Hong ◽  
Zuofei Zhao ◽  
Haijun Wang ◽  
Xinwu Ba
Keyword(s):  
Radius Of Gyration ◽  
Vinyl Polymerization ◽  
Polymerization System

Low temperature depolymerization from a copper-based aqueous vinyl polymerization system

Polymer ◽  
2012 ◽  
Vol 53 (22) ◽  
pp. 5010-5015 ◽  
Author(s):  
Lingjuan Li ◽  
Xin Shu ◽  
Jin Zhu
Keyword(s):  
Low Temperature ◽  
Vinyl Polymerization ◽  
Polymerization System

Synthesis of hyperbranched polymers via a facile self-condensing vinyl polymerization system – Glycidyl methacrylate/Cp2TiCl2/Zn

Polymer ◽  
2010 ◽  
Vol 51 (13) ◽  
pp. 2857-2863 ◽  
Author(s):  
Xiao-hui Liu ◽  
You-mei Bao ◽  
Xiu-lan Tang ◽  
Yue-sheng Li
Keyword(s):  
Glycidyl Methacrylate ◽  
Hyperbranched Polymers ◽  
Vinyl Polymerization ◽  
Polymerization System

A statistical theory for self-condensing vinyl polymerization

2009 ◽  
Vol 131 (7) ◽  
pp. 074101 ◽  
Author(s):  
Zuo-Fei Zhao ◽  
Hai-Jun Wang ◽  
Xin-Wu Ba
Keyword(s):  
Statistical Theory ◽  
Vinyl Polymerization

Statistical thermodynamic properties of a new self-condensing vinyl polymerization system

2015 ◽  
Vol 58 (9) ◽  
pp. 1478-1488
Author(s):  
Zuofei Zhao ◽  
Yuanfeng Li ◽  
Ning Yao ◽  
Haijun Wang
Keyword(s):  
Thermodynamic Properties ◽  
Statistical Thermodynamic ◽  
Vinyl Polymerization ◽  
Polymerization System

Investigation of irradiation-induced nucleation processes in silicon and germanium

1995 ◽  
Vol 53 ◽  
pp. 224-225
Author(s):  
Harry A. Atwater ◽  
C.M. Yang ◽  
K.V. Shcheglov
Keyword(s):  
Room Temperature ◽  
Crystal Size ◽  
Initial Distribution ◽  
Engineering Control ◽  
Size Evolution ◽  
Silicon And Germanium ◽  
Ge Quantum Dot ◽  
And Control ◽  
Germanium Quantum Dots ◽  
Kinetics Of

Studies of the initial stages of nucleation of silicon and germanium have yielded insights that point the way to achievement of engineering control over crystal size evolution at the nanometer scale. In addition to their importance in understanding fundamental issues in nucleation, these studies are relevant to efforts to (i) control the size distributions of silicon and germanium “quantum dots𠇍, which will in turn enable control of the optical properties of these materials, (ii) and control the kinetics of crystallization of amorphous silicon and germanium films on amorphous insulating substrates so as to, e.g., produce crystalline grains of essentially arbitrary size.Ge quantum dot nanocrystals with average sizes between 2 nm and 9 nm were formed by room temperature ion implantation into SiO2, followed by precipitation during thermal anneals at temperatures between 30°C and 1200°C[1]. Surprisingly, it was found that Ge nanocrystal nucleation occurs at room temperature as shown in Fig. 1, and that subsequent microstructural evolution occurred via coarsening of the initial distribution.

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