New CMOS Compatible Platforms for Integrated Nonlinear Optics

2015 ◽  
Author(s):  
David J. Moss
Keyword(s):  
Nonlinear Optics ◽  
Cmos Compatible

Supercontinuum Generation in Bandgap Engineered Silicon Rich Nitride Waveguides – a New Back-End CMOS Compatible Nonlinear Optics Platform

2015 ◽  
Author(s):  
Ting Wang ◽  
Doris K. T. Ng ◽  
Siu-Kit Ng ◽  
Yeow-Teck Toh ◽  
A. K. L. Chee ◽  
...  
Keyword(s):  
Nonlinear Optics ◽  
Supercontinuum Generation ◽  
Cmos Compatible

CMOS-Compatible PECVD Silicon Carbide Platform for Linear and Nonlinear Optics

ACS Photonics ◽  
2019 ◽  
Vol 6 (5) ◽  
pp. 1162-1167 ◽  
Author(s):  
Peng Xing ◽  
Danhao Ma ◽  
Kelvin J. A. Ooi ◽  
Ju Won Choi ◽  
Anuradha Murthy Agarwal ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Nonlinear Optics ◽  
Linear And Nonlinear ◽  
Cmos Compatible

scholarly journals CMOS compatible chips for applications in nonlinear optics

2013 ◽  
Author(s):  
D. J. Moss ◽  
S. D. Jackson ◽  
A. Pasquazi ◽  
M. Peccianti ◽  
R. Morandotti
Keyword(s):  
Nonlinear Optics ◽  
Cmos Compatible

scholarly journals Enhanced Optical Nonlinear Performance with Integrated 2D Graphene Oxide Thin Films in CMOS Compatible Devices

2021 ◽  
Author(s):  
Yuning Zhang ◽  
Jiayang Wu ◽  
David Moss
Keyword(s):  
Graphene Oxide ◽  
Nonlinear Optics ◽  
Kerr Nonlinearity ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Ring Resonators ◽  
Layer By Layer ◽  
Large Area ◽  
Highly Nonlinear ◽  
Cmos Compatible

We report enhanced nonlinear optics in complementary metal-oxide-semiconductor (CMOS) compatible photonic platforms through the use of layered two-dimensional (2D) graphene oxide (GO) films. We integrate GO films with silicon-on-insulator nanowires (SOI), high index doped silica glass (Hydex) and silicon nitride (SiN) waveguides and ring resonators, to demonstrate an enhanced optical nonlinearity including Kerr nonlinearity and four-wave mixing (FWM). The GO films are integrated using a large-area, transfer-free, layer-by-layer method while the film placement and size are controlled by photolithography. In SOI nanowires we observe a dramatic enhancement in both the Kerr nonlinearity and nonlinear figure of merit (FOM) due to the highly nonlinear GO films. Self-phase modulation (SPM) measurements show significant spectral broadening enhancement for SOI nanowires coated with patterned films of GO. The dependence of GO’s Kerr nonlinearity on layer number and pulse energy shows trends of the layered GO films from 2D to quasi bulk-like behavior. The nonlinear parameter of GO coated SOI nanowires is increased 16 folds, with the nonlinear FOM increasing over 20 times to FOM > 5. We also observe an improved FWM efficiency in SiN waveguides integrated with 2D layered GO films. FWM measurements for samples with different numbers of GO layers and at different pump powers are performed, achieving up to ≈7.3 dB conversion efficiency (CE) enhancement for a uniformly coated device with 1 layer of GO and ≈9.1 dB for a patterned device with 5 layers of GO. These results reveal the strong potential of GO films to improve the nonlinear optics of silicon, Hydex and SiN photonic devices.

CMOS compatible chips for nonlinear optics

2012 ◽  
Author(s):  
D. J. Moss ◽  
A. Pasquazi ◽  
M. Peccianti ◽  
R. Morandotti
Keyword(s):  
Nonlinear Optics ◽  
Cmos Compatible

scholarly journals New CMOS-compatible platforms based on silicon nitride and Hydex for nonlinear optics

2013 ◽  
Vol 7 (8) ◽  
pp. 597-607 ◽  
Author(s):  
David J. Moss ◽  
Roberto Morandotti ◽  
Alexander L. Gaeta ◽  
Michal Lipson
Keyword(s):  
Silicon Nitride ◽  
Nonlinear Optics ◽  
Cmos Compatible

scholarly journals Enhanced optical nonlinear performance with 2D graphene oxide thin films integrated with CMOS compatible devices

2021 ◽  
Author(s):  
David Moss
Keyword(s):  
Graphene Oxide ◽  
Nonlinear Optics ◽  
Kerr Nonlinearity ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Ring Resonators ◽  
Layer By Layer ◽  
Large Area ◽  
Highly Nonlinear ◽  
Cmos Compatible

We report enhanced nonlinear optics in complementary metal-oxide-semiconductor (CMOS) compatible photonic platforms through the use of layered two-dimensional (2D) graphene oxide (GO) films. We integrate GO films with silicon-on-insulator nanowires (SOI), high index doped silica glass (Hydex) and silicon nitride (SiN) waveguides and ring resonators, to demonstrate an enhanced optical nonlinearity including Kerr nonlinearity and four-wave mixing (FWM). The GO films are integrated using a large-area, transfer-free, layer-by-layer method while the film placement and size are controlled by photolithography. In SOI nanowires we observe a dramatic enhancement in both the Kerr nonlinearity and nonlinear figure of merit (FOM) due to the highly nonlinear GO films. Self-phase modulation (SPM) measurements show significant spectral broadening enhancement for SOI nanowires coated with patterned films of GO. The dependence of GO’s Kerr nonlinearity on layer number and pulse energy shows trends of the layered GO films from 2D to quasi bulk-like behavior. The nonlinear parameter of GO coated SOI nanowires is increased 16 folds, with the nonlinear FOM increasing over 20 times to FOM > 5. We also observe an improved FWM efficiency in SiN waveguides integrated with 2D layered GO films. FWM measurements for samples with different numbers of GO layers and at different pump powers are performed, achieving up to ≈7.3 dB conversion efficiency (CE) enhancement for a uniformly coated device with 1 layer of GO and ≈9.1 dB for a patterned device with 5 layers of GO. These results reveal the strong potential of GO films to improve the nonlinear optics of silicon, Hydex and SiN photonic devices.

Nonlinear Optics

1991 ◽  
Author(s):  
D. L. Mills
Keyword(s):  
Nonlinear Optics
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