Enhanced optical nonlinear performance with 2D graphene oxide thin films integrated with CMOS compatible devices

Enhanced Optical Nonlinear Performance with Integrated 2D Graphene Oxide Thin Films in CMOS Compatible Devices

10.20944/preprints202102.0611.v1 ◽

2021 ◽

Author(s):

Yuning Zhang ◽

Jiayang Wu ◽

David Moss

Keyword(s):

Graphene Oxide ◽

Nonlinear Optics ◽

Kerr Nonlinearity ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Ring Resonators ◽

Layer By Layer ◽

Large Area ◽

Highly Nonlinear ◽

Cmos Compatible

We report enhanced nonlinear optics in complementary metal-oxide-semiconductor (CMOS) compatible photonic platforms through the use of layered two-dimensional (2D) graphene oxide (GO) films. We integrate GO films with silicon-on-insulator nanowires (SOI), high index doped silica glass (Hydex) and silicon nitride (SiN) waveguides and ring resonators, to demonstrate an enhanced optical nonlinearity including Kerr nonlinearity and four-wave mixing (FWM). The GO films are integrated using a large-area, transfer-free, layer-by-layer method while the film placement and size are controlled by photolithography. In SOI nanowires we observe a dramatic enhancement in both the Kerr nonlinearity and nonlinear figure of merit (FOM) due to the highly nonlinear GO films. Self-phase modulation (SPM) measurements show significant spectral broadening enhancement for SOI nanowires coated with patterned films of GO. The dependence of GO’s Kerr nonlinearity on layer number and pulse energy shows trends of the layered GO films from 2D to quasi bulk-like behavior. The nonlinear parameter of GO coated SOI nanowires is increased 16 folds, with the nonlinear FOM increasing over 20 times to FOM > 5. We also observe an improved FWM efficiency in SiN waveguides integrated with 2D layered GO films. FWM measurements for samples with different numbers of GO layers and at different pump powers are performed, achieving up to ≈7.3 dB conversion efficiency (CE) enhancement for a uniformly coated device with 1 layer of GO and ≈9.1 dB for a patterned device with 5 layers of GO. These results reveal the strong potential of GO films to improve the nonlinear optics of silicon, Hydex and SiN photonic devices.

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High third-order optical nonlinear performance in CMOS devices integrated with 2D graphene oxide films

10.21203/rs.3.rs-448618/v1 ◽

2021 ◽

Author(s):

David Moss ◽

jiayang wu ◽

yuning zhang

Keyword(s):

Graphene Oxide ◽

Nonlinear Optics ◽

Kerr Nonlinearity ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Ring Resonators ◽

Layer By Layer ◽

Large Area ◽

Highly Nonlinear ◽

Patterned Films

Abstract We report enhanced nonlinear optics in complementary metal-oxide-semiconductor (CMOS) compatible photonic platforms through the use of layered two-dimensional (2D) graphene oxide (GO) films. We integrate GO films with silicon-on-insulator nanowires (SOI), high index doped silica glass (Hydex) and silicon nitride (SiN) waveguides and ring resonators, to demonstrate an enhanced optical nonlinearity including Kerr nonlinearity and four-wave mixing (FWM). The GO films are integrated using a large-area, transfer-free, layer-by-layer method while the film placement and size are controlled by photolithography. In SOI nanowires we observe a dramatic enhancement in both the Kerr nonlinearity and nonlinear figure of merit (FOM) due to the highly nonlinear GO films. Self-phase modulation (SPM) measurements show significant spectral broadening enhancement for SOI nanowires coated with patterned films of GO. The dependence of GO’s Kerr nonlinearity on layer number and pulse energy shows trends of the layered GO films from 2D to quasi bulk-like behavior. The nonlinear parameter of GO coated SOI nanowires is increased 16 folds, with the nonlinear FOM increasing over 20 times to FOM > 5. We also observe an improved FWM efficiency in SiN waveguides integrated with 2D layered GO films. FWM measurements for samples with different numbers of GO layers and at different pump powers are performed, achieving up to ≈ 7.3 dB conversion efficiency (CE) enhancement for a uniformly coated device with 1 layer of GO and ≈ 9.1 dB for a patterned device with 5 layers of GO. These results reveal the strong potential of GO films to improve the nonlinear optics of silicon, Hydex and SiN photonic devices.

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Enhancing the 3rd order nonlinear optical response of integrated micro-ring resonators with graphene oxide 2D films

10.21203/rs.3.rs-617143/v1 ◽

2021 ◽

Author(s):

David Moss

Keyword(s):

Graphene Oxide ◽

Pump Power ◽

Nonlinear Optical ◽

Kerr Nonlinearity ◽

Ring Resonators ◽

Layer By Layer ◽

Large Area ◽

Strong Light ◽

Precise Control ◽

Lift Off

Abstract Layered two-dimensional (2D) graphene oxide (GO) films are integrated with micro-ring resonators (MRRs) to experimentally demonstrate enhanced nonlinear optics in the form of four-wave mixing (FWM). Both uniformly coated and patterned GO films are integrated on CMOS-compatible doped silica MRRs using a large-area, transfer-free, layer-by-layer GO coating method together with photolithography and lift-off processes, yielding precise control of the film thickness, placement, and coating length. The high Kerr nonlinearity and low loss of the GO films combined with the strong light-matter interaction within the MRRs results in a significant improvement in the FWM efficiency in the hybrid MRRs. Detailed FWM measurements are performed at different pump powers and resonant wavelengths for the uniformly coated MRRs with 1 − 5 layers of GO as well as the patterned devices with 10 − 50 layers of GO. The experimental results show good agreement with theory, achieving up to ~ 7.6-dB enhancement in the FWM conversion efficiency (CE) for an MRR uniformly coated with 1 layer of GO and ~ 10.3-dB for a patterned device with 50 layers of GO. By fitting the measured CE as a function of pump power for devices with different numbers of GO layers, we also extract the dependence of GO’s third-order nonlinearity on layer number and pump power, revealing interesting physical insights about the evolution of the layered GO films from 2D monolayers to quasi bulk-like behavior. These results confirm the high nonlinear optical performance of integrated photonic resonators incorporated with 2D layered GO films.

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Enhanced optical four-wave-mixing in integrated ring resonators with graphene oxide films

10.36227/techrxiv.11859429 ◽

2020 ◽

Author(s):

David Moss ◽

Jiayang Wu ◽

xingyuan xu ◽

Yunyi Yang ◽

linnan jia ◽

...

Keyword(s):

Graphene Oxide ◽

Pump Power ◽

Kerr Nonlinearity ◽

Four Wave Mixing ◽

Ring Resonators ◽

Layer By Layer ◽

Wave Mixing ◽

Large Area ◽

Strong Light ◽

Lift Off

Layered two-dimensional (2D) graphene oxide (GO) films are integrated with micro-ring resonators (MRRs) to experimentally demonstrate enhanced nonlinear optics in the form of four-wave mixing (FWM). Both uniformly coated and patterned GO films are integrated on CMOS-compatible doped silica MRRs using a large-area, transfer-free, layer-by-layer GO coating method together with photolithography and lift-off processes, yielding precise control of the film thickness, placement, and coating length. The high Kerr nonlinearity and low loss of the GO films combined with the strong light-matter interaction within the MRRs results in a significant improvement in the FWM efficiency in the hybrid MRRs. Detailed FWM measurements are performed at different pump powers and resonant wavelengths for the uniformly coated MRRs with 1−5 layers of GO as well as the patterned devices with 10−50 layers of GO. The experimental results show good agreement with theory, achieving up to ~7.6-dB enhancement in the FWM conversion efficiency (CE) for an MRR uniformly coated with 1 layer of GO and ~10.3-dB for a patterned device with 50 layers of GO. By fitting the measured CE as a function of pump power for devices with different numbers of GO layers, we also extract the dependence of GO’s third-order nonlinearity on layer number and pump power, revealing interesting physical insights about the evolution of the layered GO films from 2D monolayers to quasi bulk-like behavior. These results confirm the high nonlinear optical performance of integrated photonic resonators incorporated with 2D layered GO films.

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Enhanced optical four-wave-mixing in integrated ring resonators with graphene oxide films

10.36227/techrxiv.11859429.v1 ◽

2020 ◽

Author(s):

David Moss ◽

Jiayang Wu ◽

xingyuan xu ◽

Yunyi Yang ◽

linnan jia ◽

...

Keyword(s):

Graphene Oxide ◽

Pump Power ◽

Kerr Nonlinearity ◽

Four Wave Mixing ◽

Ring Resonators ◽

Layer By Layer ◽

Wave Mixing ◽

Large Area ◽

Strong Light ◽

Lift Off

Layered two-dimensional (2D) graphene oxide (GO) films are integrated with micro-ring resonators (MRRs) to experimentally demonstrate enhanced nonlinear optics in the form of four-wave mixing (FWM). Both uniformly coated and patterned GO films are integrated on CMOS-compatible doped silica MRRs using a large-area, transfer-free, layer-by-layer GO coating method together with photolithography and lift-off processes, yielding precise control of the film thickness, placement, and coating length. The high Kerr nonlinearity and low loss of the GO films combined with the strong light-matter interaction within the MRRs results in a significant improvement in the FWM efficiency in the hybrid MRRs. Detailed FWM measurements are performed at different pump powers and resonant wavelengths for the uniformly coated MRRs with 1−5 layers of GO as well as the patterned devices with 10−50 layers of GO. The experimental results show good agreement with theory, achieving up to ~7.6-dB enhancement in the FWM conversion efficiency (CE) for an MRR uniformly coated with 1 layer of GO and ~10.3-dB for a patterned device with 50 layers of GO. By fitting the measured CE as a function of pump power for devices with different numbers of GO layers, we also extract the dependence of GO’s third-order nonlinearity on layer number and pump power, revealing interesting physical insights about the evolution of the layered GO films from 2D monolayers to quasi bulk-like behavior. These results confirm the high nonlinear optical performance of integrated photonic resonators incorporated with 2D layered GO films.

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Transforming silicon into a high performing in tegrated nonlinear photonics platform by integrati on with 2D graphene oxide films

10.36227/techrxiv.12061809 ◽

2020 ◽

Author(s):

David Moss ◽

Baohua Jiao ◽

Jiayang Wu ◽

Yuning Zhang ◽

Yunyi Yang ◽

...

Keyword(s):

Kerr Nonlinearity ◽

Photonic Devices ◽

Silicon On Insulator ◽

Layer By Layer ◽

Large Area ◽

High Performing ◽

Precise Control ◽

Silicon Photonic ◽

Highly Nonlinear ◽

Coating Method

Layered two-dimensional (2D) GO films are integrated with silicon-on-insulator (SOI) nanowire waveguides to experimentally demonstrate an enhanced Kerr nonlinearity, observed through self-phase modulation (SPM). The GO films are integrated with SOI nanowires using a large-area, transfer-free, layer-by-layer coating method that yields precise control of the film thickness. The film placement and coating length are controlled by opening windows in the silica cladding of the SOI nanowires. Owing to the strong mode overlap between the SOI nanowires and the highly nonlinear GO films, the Kerr nonlinearity of the hybrid waveguides is significantly enhanced. Detailed SPM measurements using picosecond optical pulses show significant spectral broadening enhancement for SOI nanowires coated with 2.2-mm-long films of 1−3 layers of GO, and 0.4-mm-long films with 5−20 layers of GO. By fitting the experimental results with theory, the dependence of GO’s n2 on layer number and pulse energy is obtained, showing interesting physical insights and trends of the layered GO films from 2D monolayers to quasi bulk-like behavior. Finally, we show that by coating SOI nanowires with GO films the effective nonlinear parameter of SOI nanowires is increased 16 fold, with the effective nonlinear figure of merit (FOM) increasing by about 20 times to FOM > 5. These results reveal the strong potential of using layered GO films to improve the Kerr nonlinear optical performance of silicon photonic devices.

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Elevating silicon into a high performance nonlinear optical platform through the integration of 2D graphene oxide thin films

10.21203/rs.3.rs-511259/v1 ◽

2021 ◽

Author(s):

David Moss

Keyword(s):

High Performance ◽

Nonlinear Optical ◽

Kerr Nonlinearity ◽

Photonic Devices ◽

Silicon On Insulator ◽

Layer By Layer ◽

Large Area ◽

Precise Control ◽

Highly Nonlinear ◽

Coating Method

Abstract Layered two-dimensional (2D) GO films are integrated with silicon-on-insulator (SOI) nanowire waveguides to experimentally demonstrate an enhanced Kerr nonlinearity, observed through self-phase modulation (SPM). The GO films are integrated with SOI nanowires using a large-area, transfer-free, layer-by-layer coating method that yields precise control of the film thickness. The film placement and coating length are controlled by opening windows in the silica cladding of the SOI nanowires. Owing to the strong mode overlap between the SOI nanowires and the highly nonlinear GO films, the Kerr nonlinearity of the hybrid waveguides is significantly enhanced. Detailed SPM measurements using picosecond optical pulses show significant spectral broadening enhancement for SOI nanowires coated with 2.2-mm-long films of 1 − 3 layers of GO, and 0.4-mm-long films with 5 − 20 layers of GO. By fitting the experimental results with theory, the dependence of GO’s n2 on layer number and pulse energy is obtained, showing interesting physical insights and trends of the layered GO films from 2D monolayers to quasi bulk-like behavior. Finally, we show that by coating SOI nanowires with GO films the effective nonlinear parameter of SOI nanowires is increased 16 fold, with the effective nonlinear figure of merit (FOM) increasing by about 20 times to FOM > 5. These results reveal the strong potential of using layered GO films to improve the Kerr nonlinear optical performance of silicon photonic devices.

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Transforming silicon into a high performing in tegrated nonlinear photonics platform by integrati on with 2D graphene oxide films

10.36227/techrxiv.12061809.v1 ◽

2020 ◽

Author(s):

David Moss ◽

Baohua Jiao ◽

Jiayang Wu ◽

Yuning Zhang ◽

Yunyi Yang ◽

...

Keyword(s):

Kerr Nonlinearity ◽

Photonic Devices ◽

Silicon On Insulator ◽

Layer By Layer ◽

Large Area ◽

High Performing ◽

Precise Control ◽

Silicon Photonic ◽

Highly Nonlinear ◽

Coating Method

Layered two-dimensional (2D) GO films are integrated with silicon-on-insulator (SOI) nanowire waveguides to experimentally demonstrate an enhanced Kerr nonlinearity, observed through self-phase modulation (SPM). The GO films are integrated with SOI nanowires using a large-area, transfer-free, layer-by-layer coating method that yields precise control of the film thickness. The film placement and coating length are controlled by opening windows in the silica cladding of the SOI nanowires. Owing to the strong mode overlap between the SOI nanowires and the highly nonlinear GO films, the Kerr nonlinearity of the hybrid waveguides is significantly enhanced. Detailed SPM measurements using picosecond optical pulses show significant spectral broadening enhancement for SOI nanowires coated with 2.2-mm-long films of 1−3 layers of GO, and 0.4-mm-long films with 5−20 layers of GO. By fitting the experimental results with theory, the dependence of GO’s n2 on layer number and pulse energy is obtained, showing interesting physical insights and trends of the layered GO films from 2D monolayers to quasi bulk-like behavior. Finally, we show that by coating SOI nanowires with GO films the effective nonlinear parameter of SOI nanowires is increased 16 fold, with the effective nonlinear figure of merit (FOM) increasing by about 20 times to FOM > 5. These results reveal the strong potential of using layered GO films to improve the Kerr nonlinear optical performance of silicon photonic devices.

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Optical polarizers based on graphene oxide integrated with waveguides and ring resonators

10.21203/rs.3.rs-885241/v1 ◽

2021 ◽

Author(s):

David Moss

Keyword(s):

Graphene Oxide ◽

Film Thickness ◽

Extinction Ratio ◽

Ring Resonators ◽

Layer By Layer ◽

Film Material ◽

Large Area ◽

Material Loss ◽

Precise Control ◽

Lift Off

Abstract Integrated waveguide polarizers and polarization-selective micro-ring resonators (MRRs) incorporated with graphene oxide (GO) films are experimentally demonstrated. CMOS-compatible doped silica waveguides and MRRs with both uniformly coated and patterned GO films are fabricated based on a large-area, transfer-free, layer-by-layer GO coating method that yields precise control of the film thickness. Photolithography and lift-off processes are used to achieve photolithographic patterning of GO films with precise control of the placement and coating length. Detailed measurements are performed to characterize the performance of the devices versus GO film thickness and coating length as a function of polarization, wavelength and power. A high polarization dependent loss of ~ 53.8 dB is achieved for the waveguide coated with 2-mm-long patterned GO films. It is found that intrinsic film material loss anisotropy dominates the performance for less than 20 layers whereas polarization dependent mode overlap dominates for thicker layers. For the MRRs, the GO coating length is reduced to 50 µm, yielding a ~ 8.3-dB polarization extinction ratio between TE and TM resonances. These results offer interesting physical insights and trends of the layered GO films and demonstrate the effectiveness of introducing GO films into photonic integrated devices to realize high-performance polarization selective components.

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Two dimensional graphene oxide films for enhanced optical nonlinear performance in CMOS compatible integrated devices

10.36227/techrxiv.14120444 ◽

2021 ◽

Author(s):

David Moss

Keyword(s):

Kerr Nonlinearity ◽

Optical Nonlinearity ◽

Four Wave Mixing ◽

Silicon On Insulator ◽

Ring Resonators ◽

Wave Mixing ◽

Two Dimensional ◽

Integrated Devices ◽

Cmos Compatible ◽

Nonlinear Performance

We integrate GO films with silicon-on-insulator nanowires (SOI), high index doped silica glass (Hydex) and silicon nitride (SiN) waveguides and ring resonators, to demonstrate an enhanced optical nonlinearity including Kerr nonlinearity and four-wave mixing (FWM).

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