Supercontinuum Generation in Bandgap Engineered Silicon Rich Nitride Waveguides – a New Back-End CMOS Compatible Nonlinear Optics Platform

2015 ◽  
Author(s):  
Ting Wang ◽  
Doris K. T. Ng ◽  
Siu-Kit Ng ◽  
Yeow-Teck Toh ◽  
A. K. L. Chee ◽  
...  
Keyword(s):  
Nonlinear Optics ◽  
Supercontinuum Generation ◽  
Cmos Compatible

scholarly journals Light People: Professor John Dudley spoke about supercontinuum generation and International Day of Light

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Chenzi Guo
Keyword(s):  
Nonlinear Optics ◽  
Ultrafast Lasers ◽  
Rogue Waves ◽  
Supercontinuum Generation ◽  
Spectral Broadening ◽  
The Past

EditorialThe extreme spectral broadening of light in supercontinuum generation (SCG) is considered by many as the ultimate legacy of nonlinear optics. In this interview, Light: Science & Applications invited John Dudley [see the “Short Bio” section]—pioneer of supercontinuum generation, rogue waves, and ultrafast lasers—to share insight on how supercontinuum generation have evolved over the past decades and where it is heading. Also as the Steering Chair of UNESCO’s International Day of Light & International Year of Light (IDL & IYL), John is asked to share his comments on how light may influence post-pandemic World.

Octave-Spanning Supercontinuum Generation in CMOS-Compatible Silicon Nitride Waveguides

2011 ◽  
Author(s):  
Robert Halir ◽  
Yoshitomo Okawachi ◽  
Jacob S. Levy ◽  
Mark A. Foster ◽  
Michal Lipson ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Supercontinuum Generation ◽  
Cmos Compatible

Supercontinuum generation in bandgap engineered, back-end CMOS compatible silicon rich nitride waveguides

2015 ◽  
Vol 9 (5) ◽  
pp. 498-506 ◽  
Author(s):  
Ting Wang ◽  
Doris K. T. Ng ◽  
Siu-Kit Ng ◽  
Yeow-Teck Toh ◽  
A. K. L. Chee ◽  
...  
Keyword(s):  
Supercontinuum Generation ◽  
Cmos Compatible

CMOS-Compatible PECVD Silicon Carbide Platform for Linear and Nonlinear Optics

ACS Photonics ◽  
2019 ◽  
Vol 6 (5) ◽  
pp. 1162-1167 ◽  
Author(s):  
Peng Xing ◽  
Danhao Ma ◽  
Kelvin J. A. Ooi ◽  
Ju Won Choi ◽  
Anuradha Murthy Agarwal ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Nonlinear Optics ◽  
Linear And Nonlinear ◽  
Cmos Compatible

scholarly journals CMOS compatible chips for applications in nonlinear optics

2013 ◽  
Author(s):  
D. J. Moss ◽  
S. D. Jackson ◽  
A. Pasquazi ◽  
M. Peccianti ◽  
R. Morandotti
Keyword(s):  
Nonlinear Optics ◽  
Cmos Compatible

scholarly journals Enhanced Optical Nonlinear Performance with Integrated 2D Graphene Oxide Thin Films in CMOS Compatible Devices

2021 ◽  
Author(s):  
Yuning Zhang ◽  
Jiayang Wu ◽  
David Moss
Keyword(s):  
Graphene Oxide ◽  
Nonlinear Optics ◽  
Kerr Nonlinearity ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Ring Resonators ◽  
Layer By Layer ◽  
Large Area ◽  
Highly Nonlinear ◽  
Cmos Compatible

We report enhanced nonlinear optics in complementary metal-oxide-semiconductor (CMOS) compatible photonic platforms through the use of layered two-dimensional (2D) graphene oxide (GO) films. We integrate GO films with silicon-on-insulator nanowires (SOI), high index doped silica glass (Hydex) and silicon nitride (SiN) waveguides and ring resonators, to demonstrate an enhanced optical nonlinearity including Kerr nonlinearity and four-wave mixing (FWM). The GO films are integrated using a large-area, transfer-free, layer-by-layer method while the film placement and size are controlled by photolithography. In SOI nanowires we observe a dramatic enhancement in both the Kerr nonlinearity and nonlinear figure of merit (FOM) due to the highly nonlinear GO films. Self-phase modulation (SPM) measurements show significant spectral broadening enhancement for SOI nanowires coated with patterned films of GO. The dependence of GO’s Kerr nonlinearity on layer number and pulse energy shows trends of the layered GO films from 2D to quasi bulk-like behavior. The nonlinear parameter of GO coated SOI nanowires is increased 16 folds, with the nonlinear FOM increasing over 20 times to FOM > 5. We also observe an improved FWM efficiency in SiN waveguides integrated with 2D layered GO films. FWM measurements for samples with different numbers of GO layers and at different pump powers are performed, achieving up to ≈7.3 dB conversion efficiency (CE) enhancement for a uniformly coated device with 1 layer of GO and ≈9.1 dB for a patterned device with 5 layers of GO. These results reveal the strong potential of GO films to improve the nonlinear optics of silicon, Hydex and SiN photonic devices.

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