Characterization of some suitable deflecting liquids in photothermal deflection spectroscopy

1990 ◽  
Vol 29 (28) ◽  
pp. 3989 ◽  
Author(s):  
Marco Montecchi ◽  
Enrico Masetti
Keyword(s):  
Photothermal Deflection Spectroscopy ◽  
Photothermal Deflection

scholarly journals Characterization Of Thermally Stable Dye-Doped Polyimide Based Electrooptic Materials

1993 ◽  
Vol 328 ◽  
Author(s):  
Michael B. Meinhardt ◽  
Paul A. Cahill ◽  
Carl H. Seager ◽  
Allyson J. Beuhler ◽  
David A. Wargowski
Keyword(s):  
Dye Degradation ◽  
Curing Process ◽  
Polyimide Films ◽  
Scanning Calorimetry ◽  
Thermal Stabilities ◽  
Photothermal Deflection Spectroscopy ◽  
Dye Aggregation ◽  
Donor Acceptor ◽  
Photothermal Deflection

ABSTRACTPreparation and characterization of novel dye-doped polyimide films for electrooptics is described. Thermal stabilities of donor-acceptor 2,5-diaryl oxazoles were evaluated by differential scanning calorimetry. Absorptive losses in thin films of Ultradel 9000D® doped with donor-acceptor oxazoles were measured by photothermal deflection spectroscopy. Absorptive losses at high doping levels may be explainable by dye-dye aggregation or dye degradation during the curing process. Lower doping levels, however, show losses of ≤ 3.0 dB/cm at 830 nm and ≤ 2.4 dB/cm at 1320 nm.

Thermal characterization of Li-ion cell electrodes by photothermal deflection spectroscopy

2016 ◽  
Vol 325 ◽  
pp. 104-115 ◽  
Author(s):  
André Loges ◽  
Sabrina Herberger ◽  
Daniel Werner ◽  
Thomas Wetzel
Keyword(s):  
Thermal Characterization ◽  
Photothermal Deflection Spectroscopy ◽  
Li Ion ◽  
Photothermal Deflection

Characterization of a-Si1-xCx:H/a-Si:H and a-SiNX:H/a-Si:H heterojunctions by photothermal deflection spectroscopy

1987 ◽  
Vol 97-98 ◽  
pp. 971-974 ◽  
Author(s):  
A. Asano ◽  
T. Ichimura ◽  
M. Ohsawa ◽  
H. Sakai ◽  
Y. Uchida
Keyword(s):  
Photothermal Deflection Spectroscopy ◽  
Photothermal Deflection

scholarly journals Photothermal Deflection Spectroscopy Study of Nanocrystalline Si (nc-Si) Thin Films Deposited on Porous Aluminum with PECVD

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
S. Ktifa ◽  
M. Ghrib ◽  
F. Saadallah ◽  
H. Ezzaouia ◽  
N. Yacoubi
Keyword(s):  
Optical Properties ◽  
Energy Gap ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Porous Aluminum ◽  
Force Microscopy ◽  
Photothermal Deflection Spectroscopy ◽  
Atomic Force ◽  
Photothermal Deflection ◽  
Morphology Characterization

We have studied the optical properties of nanocrystalline silicon (nc-Si) film deposited by plasma enhancement chemical vapor deposition (PECVD) on porous aluminum structure using, respectively, the Photothermal Deflection Spectroscopy (PDS) and Photoluminescence (PL). The aim of this work is to investigate the influence of anodisation current on the optical properties of the porous aluminum silicon layers (PASL). The morphology characterization studied by atomic force microscopy (AFM) technique has shown that the grain size of (nc-Si) increases with the anodisation current. However, a band gap shift of the energy gap was observed.

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