Silicon-on-Insulator Polarization Splitter-Rotator Based on TM0-TE1 Mode Conversion in a Bi-level Taper

Fabrication processes of a magneto-optic waveguide with a Si guiding layer for an optical isolator employing a nonreciprocal guided-radiation mode conversion are investigated. The optical isolator is constructed on a silicon-on-insulator (SOI) structure. The magneto-optic waveguide is fabricated by bonding the Si guiding layer with a cerium-substituted yttrium iron garnet (Ce:YIG). The relationship of waveguide geometric parameters is determined at a wavelength of 1550 nm. The results show that larger tolerance for isolator operation can be obtained at smaller gaps between Si and Ce:YIG. Bonding processes including photosensitive adhesive bonding and surface activated bonding are then compared. It is found that the surface activated bonding process is easier to control and more promising than the photosensitive adhesive bonding.

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A Compact Silicon-on-Insulator MMI-based Polarization Splitter

2007 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics ◽

10.1109/omems.2007.4373870 ◽

2007 ◽

Author(s):

Yao-Feng Ma ◽

Ding-Wei Huang

Keyword(s):

Silicon On Insulator ◽

Polarization Splitter

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Novel Polarization Rotators for Silicon Photonic Integrated Circuits

Optical Data Processing and Storage ◽

10.1515/odps-2017-0013 ◽

2017 ◽

Vol 3 (1) ◽

Cited By ~ 1

Author(s):

Chyong-Hua Chen ◽

Kuei Ho Chen

Keyword(s):

Integrated Circuits ◽

Mode Conversion ◽

Extinction Ratio ◽

Silicon On Insulator ◽

Polarization Rotator ◽

Silicon Photonic ◽

Two Hybrid ◽

Insulator Substrate ◽

Mode Interference ◽

Polarization Rotators

AbstractWe present a novel mode-interference based polarization rotator with a dual-waveguide structure based on the standard silicon-on-insulator substrate. The polarization rotator section consists of two non-identical nanowire waveguides arranged 45° offset with regard to the other. Two identical dual-taper sections are introduced in-between this polarization rotator and the standard silicon input/output waveguides to realize equal modal excitation amplitudes of two hybrid modes in the polarization rotator section. Simulation results show that this device with the total length of 25.3 μm has the insertion loss of −0.51 dB and the extinction ratio of 32.27 dB for TM → TE mode conversion at the wavelength of 1550 nm and the extinction ratio of over 20 dB at thewavelength ranging from 1536 nm to 1568 nm.

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