scholarly journals Novel Polarization Rotators for Silicon Photonic Integrated Circuits

2017 ◽  
Vol 3 (1) ◽  
Author(s):  
Chyong-Hua Chen ◽  
Kuei Ho Chen

AbstractWe present a novel mode-interference based polarization rotator with a dual-waveguide structure based on the standard silicon-on-insulator substrate. The polarization rotator section consists of two non-identical nanowire waveguides arranged 45° offset with regard to the other. Two identical dual-taper sections are introduced in-between this polarization rotator and the standard silicon input/output waveguides to realize equal modal excitation amplitudes of two hybrid modes in the polarization rotator section. Simulation results show that this device with the total length of 25.3 μm has the insertion loss of −0.51 dB and the extinction ratio of 32.27 dB for TM → TE mode conversion at the wavelength of 1550 nm and the extinction ratio of over 20 dB at thewavelength ranging from 1536 nm to 1568 nm.

Nanophotonics ◽  
2015 ◽  
Vol 4 (3) ◽  
pp. 261-268 ◽  
Author(s):  
Chenran Ye ◽  
Ke Liu ◽  
Richard A. Soref ◽  
Volker J. Sorger

Abstract We report on a three-waveguide electro-optic switch for compact photonic integrated circuits and data routing applications. The device features a plasmonic metal-oxide-semiconductor (MOS) mode for enhanced light-matter-interactions. The switching mechanism originates from a capacitor-like design where the refractive index of the active medium, indium-tin-oxide, is altered via shifting the plasma frequency due to carrier accumulation inside the waveguide-based MOS structure. This light manipulation mechanism controls the transmission direction of transverse magnetic polarized light into either a CROSS or BAR waveguide port. The extinction ratio of 18 (7) dB for the CROSS (BAR) state, respectively, is achieved via a gating voltage bias. The ultrafast broadband fJ/bit device allows for seamless integration with silicon-on-insulator platforms for low-cost manufacturing.


Nanophotonics ◽  
2015 ◽  
Vol 4 (1) ◽  
pp. 143-164 ◽  
Author(s):  
Sasan Fathpour

AbstractSilicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature). More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for different purposes with the common feature of integrating them on a single substrate, most notably silicon.


Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.


Author(s):  
Pei Y. Tsai ◽  
Junedong Lee ◽  
Paul Ronsheim ◽  
Lindsay Burns ◽  
Richard Murphy ◽  
...  

Abstract A stringent sampling plan is developed to monitor and improve the quality of 300mm SOI (silicon on insulator) starting wafers procured from the suppliers. The ultimate goal is to obtain the defect free wafers for device fabrication and increase yield and circuit performance of the semiconductor integrated circuits. This paper presents various characterization techniques for QC monitor and examples of the typical defects attributed to wafer manufacturing processes.


Nanophotonics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1765-1773
Author(s):  
Yi Zhang ◽  
Jianfeng Gao ◽  
Senbiao Qin ◽  
Ming Cheng ◽  
Kang Wang ◽  
...  

Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.


2021 ◽  
Vol 142 ◽  
pp. 107177
Author(s):  
Dao Duy Tu ◽  
Ho Duc Tam Linh ◽  
Vuong Quang Phuoc ◽  
Dao Duy Thang ◽  
Truong Cao Dung ◽  
...  

2021 ◽  
Vol 42 (4) ◽  
pp. 469-472
Author(s):  
Yingtao Yu ◽  
Si Chen ◽  
Qitao Hu ◽  
Paul Solomon ◽  
Zhen Zhang

2014 ◽  
Vol 116 (7) ◽  
pp. 074513 ◽  
Author(s):  
V. Mikhelashvili ◽  
D. Cristea ◽  
B. Meyler ◽  
S. Yofis ◽  
Y. Shneider ◽  
...  

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