Numerically investigated the third-harmonic generation via tip-enhancement effect for high resolution near-field optical lithography

Author(s):  
Ning Zhu ◽  
Hui Zhang ◽  
Hao Li
2017 ◽  
Vol 383 ◽  
pp. 418-422 ◽  
Author(s):  
Hui Zhang ◽  
Ning Zhu ◽  
Ting Mei ◽  
Miao He ◽  
Hao Li ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3194
Author(s):  
Adrian Petris ◽  
Petronela Gheorghe ◽  
Tudor Braniste ◽  
Ion Tiginyanu

The ultrafast third-order optical nonlinearity of c-plane GaN crystal, excited by ultrashort (fs) high-repetition-rate laser pulses at 1550 nm, wavelength important for optical communications, is investigated for the first time by optical third-harmonic generation in non-phase-matching conditions. As the thermo-optic effect that can arise in the sample by cumulative thermal effects induced by high-repetition-rate laser pulses cannot be responsible for the third-harmonic generation, the ultrafast nonlinear optical effect of solely electronic origin is the only one involved in this process. The third-order nonlinear optical susceptibility of GaN crystal responsible for the third-harmonic generation process, an important indicative parameter for the potential use of this material in ultrafast photonic functionalities, is determined.


Author(s):  
D.V. Mokrousova ◽  
G.E. Rizaev ◽  
A.V. Shalova ◽  
D.E. Shipilo ◽  
N.A. Panov ◽  
...  

2013 ◽  
Vol 760-762 ◽  
pp. 392-396
Author(s):  
You Bin Yu

Third-harmonic generation in a special asymmetric quantum well is investigated. The third-harmonic generation coefficient is carried out by applying compact-density-matrix method. The numerical results are presented for a GaAs/AlGaAs asymmetric quantum well. The very large third-harmonic generation coefficient is obtained in this quantum well. Moreover, the third-harmonic generation coefficient dependents on the quantum well parameters are investigated, respectively.


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