Organic Thin Film Multi-Level Data Storage

2005 ◽  
Author(s):  
M. Lauters ◽  
B. McCarthy ◽  
D. Sarid ◽  
G. E. Jabbour
Keyword(s):  
Thin Film ◽  
Data Storage ◽  
Organic Thin Film ◽  
Level Data ◽  
Multi Level

Improved multi-level data storage properties of germanium-antimony-tellurium films by nitrogen doping

2017 ◽  
Vol 141 ◽  
pp. 120-124 ◽  
Author(s):  
Xiao Yu ◽  
Yue Zhao ◽  
Chao Li ◽  
Chaoquan Hu ◽  
Liang Ma ◽  
...  
Keyword(s):  
Data Storage ◽  
Nitrogen Doping ◽  
Level Data ◽  
Multi Level ◽  
Storage Properties

A co-assembled organic thin film for nanoscale data storage with lowered threshold voltage

2015 ◽  
Vol 119 (4) ◽  
pp. 1477-1481
Author(s):  
Ying Ma ◽  
Cong Zhao ◽  
Boxing An ◽  
Qing Wang ◽  
Fangxiao Shi ◽  
...  
Keyword(s):  
Thin Film ◽  
Data Storage ◽  
Threshold Voltage ◽  
Organic Thin Film

Ultrahigh-density data storage on a novel organic thin film achieved using a scanning tunnelling microscope

2002 ◽  
Vol 13 (6) ◽  
pp. 733-735 ◽  
Author(s):  
H M Wu ◽  
Y L Song ◽  
T Zhao ◽  
L Jiang ◽  
H W Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Data Storage ◽  
Organic Thin Film ◽  
Scanning Tunnelling Microscope ◽  
Density Data ◽  
Scanning Tunnelling ◽  
Ultrahigh Density

Non-volatile multi-level cell storage via sequential phase transition in Sb7Te3/GeSb6Te multilayer thin film

2021 ◽  
Author(s):  
Zhehao Xu ◽  
Xiao Su ◽  
Sicong Hua ◽  
Jiwei Zhai ◽  
Sannian Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Transition ◽  
Data Storage ◽  
High Performance ◽  
Data Transfer ◽  
Multilayer Thin Film ◽  
Switching Speed ◽  
Huge Data ◽  
Multi Level ◽  
Sequential Phase

Abstract For high-performance data centers, huge data transfer, reliable data storage and emerging in-memory computing require memory technology with the combination of accelerated access, large capacity and persistence. As for phase-change memory, the Sb-rich compounds Sb7Te3 and GeSb6Te have demonstrated fast switching speed and considerable difference of phase transition temperature. A multilayer structure is built up with the two compounds to reach three non-volatile resistance states. Sequential phase transition in a relationship with the temperature is confirmed to contribute to different resistance states with sufficient thermal stability. With the verification of nanoscale confinement for the integration of Sb7Te3/GeSb6Te multilayer thin film, T-shape PCM cells are fabricated and two SET operations are executed with 40 ns-width pulses, exhibiting good potential for the multi-level PCM candidate.

Organization of multi-level data storage

2019 ◽  
pp. 68-75 ◽  
Author(s):  
B. Ya. Sovetov ◽  
T. M. Tatarnikova ◽  
E. D. Poymanova
Keyword(s):  
Data Storage ◽  
Level Data ◽  
Multi Level

Improved phase-change properties of Sn–Zn–Sb alloys with a two-step crystallization process for multi-level data storage applications

2019 ◽  
Vol 45 (13) ◽  
pp. 16442-16449 ◽  
Author(s):  
Yawen Zhang ◽  
Guoxiang Wang ◽  
Fen Liu ◽  
Rongping Wang ◽  
Yimin Chen ◽  
...  
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Crystallization Process ◽  
Level Data ◽  
Multi Level ◽  
Step Crystallization
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