A flexible nickel phthalocyanine resistive random access memory with multi-level data storage capability

2021 ◽  
Author(s):  
Tariq Aziz ◽  
Yun Sun ◽  
Zu-Heng Wu ◽  
Mustafa Haider ◽  
Ting-Yu Qu ◽  
...  
Keyword(s):  
Data Storage ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Nickel Phthalocyanine ◽  
Level Data ◽  
Multi Level

scholarly journals Flexible Electronics: Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage (Small 3/2016)

Small ◽  
2016 ◽  
Vol 12 (3) ◽  
pp. 265-265 ◽  
Author(s):  
Su-Ting Han ◽  
Ye Zhou ◽  
Bo Chen ◽  
Chundong Wang ◽  
Li Zhou ◽  
...  
Keyword(s):  
Data Storage ◽  
Flexible Electronics ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

Organic small molecule-based RRAM for data storage and neuromorphic computing

2020 ◽  
Vol 8 (37) ◽  
pp. 12714-12738 ◽  
Author(s):  
Boyuan Mu ◽  
Hsiao-Hsuan Hsu ◽  
Chi-Ching Kuo ◽  
Su-Ting Han ◽  
Ye Zhou
Keyword(s):  
Small Molecules ◽  
Data Storage ◽  
Small Molecule ◽  
State Of The Art ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Neuromorphic Computing

Recent state-of-the-art developments related to organic small molecules for resistive random-access memory devices has been emphasized.

Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage

Small ◽  
2015 ◽  
Vol 12 (3) ◽  
pp. 390-396 ◽  
Author(s):  
Su-Ting Han ◽  
Ye Zhou ◽  
Bo Chen ◽  
Chundong Wang ◽  
Li Zhou ◽  
...  
Keyword(s):  
Data Storage ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

Halide perovskites for resistive random-access memories

2019 ◽  
Vol 7 (18) ◽  
pp. 5226-5234 ◽  
Author(s):  
Hyojung Kim ◽  
Ji Su Han ◽  
Sun Gil Kim ◽  
Soo Young Kim ◽  
Ho Won Jang
Keyword(s):  
Data Storage ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Storage Devices ◽  
New Class ◽  
Switching Material ◽  
Halide Perovskites ◽  
Halide Perovskite

Halide-perovskites-based resistive random-access memory (ReRAM) devices are emerging as a new class of revolutionary data storage devices because the switching material—halide perovskite—has received considerable attention in recent years owing to its unique and exotic electrical, optical, and structural properties.

Broadband photoelectric tunable quantum dot based resistive random access memory

2020 ◽  
Vol 8 (6) ◽  
pp. 2178-2185 ◽  
Author(s):  
Zhiliang Chen ◽  
Yu Yu ◽  
Lufan Jin ◽  
Yifan Li ◽  
Qingyan Li ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Data Storage ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Multilevel Data ◽  
Access Memory ◽  
Storage Ability

Ultra-stable broadband photoelectric tunable PbS QD based RRAM device with flexibility and multilevel data storage ability was demonstrated.

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