Silicon nitride photonic molecules for robust sensing applications

Author(s):  
André L. Moras ◽  
Gabriel R. da Ascenção ◽  
Marcus V. A. Pires ◽  
Valnir C. S. Junior ◽  
Luis A. M. Barea ◽  
...  
2020 ◽  
Vol 1695 ◽  
pp. 012124
Author(s):  
A Elmanova ◽  
P An ◽  
V Kovalyuk ◽  
A Golikov ◽  
I Elmanov ◽  
...  

2018 ◽  
Vol 10 (3) ◽  
pp. 1-7 ◽  
Author(s):  
Wei Li ◽  
Chuan Seng Tan ◽  
P. Anantha ◽  
Kwang Hong Lee ◽  
Hao Dong Qiu ◽  
...  

Author(s):  
Rainer Hainberger ◽  
Paul Muellner ◽  
Stefan Nevlacsil ◽  
Alejandro Maese-Novo ◽  
Florian Vogelbacher ◽  
...  

Author(s):  
Wei Li ◽  
P. Anantha ◽  
Kwang Hong Lee ◽  
Hao Dong Qiu ◽  
Xin Guo ◽  
...  

2018 ◽  
Vol 102 ◽  
pp. 497-503 ◽  
Author(s):  
Hiofan Hoi ◽  
Salva S. Rezaie ◽  
Lu Gong ◽  
Payel Sen ◽  
Hongbo Zeng ◽  
...  

2019 ◽  
Author(s):  
Hei Chit Leo Tsui ◽  
Osamah Alsalman ◽  
Abdullah Alodhayb ◽  
Hamad Albrithen ◽  
David E. Hagan ◽  
...  

Sensors ◽  
2019 ◽  
Vol 19 (4) ◽  
pp. 865 ◽  
Author(s):  
Alfredo González-Fernández ◽  
Joan Juvert ◽  
Mariano Aceves-Mijares ◽  
Carlos Domínguez

In this paper, we present structural and luminescence studies of silicon-rich silicon oxide (SRO) and SRO-Si 3 N 4 bi-layers for integration in emitter-waveguide pairs that can be used for photonic lab-on-a-chip sensing applications. The results from bi and mono layers are also compared. Two clearly separated emission bands are respectively attributed to a combination of defect and quantum confinement–related emission in the SRO, as well as to defects found in an oxynitride transition zone that forms between the oxide and the nitride films, while ruling out quantum-confinement phenomena in the silicon nitride.


Author(s):  
Yangcheng Li ◽  
Farzaneh Abolmaali ◽  
Nicholaos I. Limberopoulos ◽  
Augustine M. Urbas ◽  
Vasily N. Astratov

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