High frequency electrical crosstalk in monolithically integrated EA-moduiated tunable DBR lasers

2000 ◽  
Author(s):  
J. E. Johnson ◽  
L. J. P. Ketelsen ◽  
D. A. Ackerman ◽  
L. Zhang ◽  
M.S. Hybertsen ◽  
...  
Keyword(s):  
High Frequency ◽  
Monolithically Integrated ◽  
Dbr Lasers

Monolithically integrated DBR lasers with simple tapered waveguide for low-loss fibre coupling

1993 ◽  
Vol 29 (23) ◽  
pp. 2067 ◽  
Author(s):  
K. Kasaya ◽  
Y. Kondo ◽  
M. Okamoto ◽  
O. Mitomi ◽  
M. Naganuma
Keyword(s):  
Low Loss ◽  
Monolithically Integrated ◽  
Tapered Waveguide ◽  
Dbr Lasers

scholarly journals Mutual Injection Locking of Monolithically Integrated Coupled-Cavity DBR Lasers

2011 ◽  
Vol 23 (13) ◽  
pp. 908-910 ◽  
Author(s):  
Anna Tauke-Pedretti ◽  
G. Allen Vawter ◽  
Erik J. Skogen ◽  
Greg Peake ◽  
Mark Overberg ◽  
...  
Keyword(s):  
Injection Locking ◽  
Monolithically Integrated ◽  
Dbr Lasers ◽  
Coupled Cavity ◽  
Mutual Injection Locking

Measurements of low frequency and high frequency relative intensity noise in DBR lasers

1991 ◽  
Vol 27 (17) ◽  
pp. 1524 ◽  
Author(s):  
H. Sundaresan ◽  
N.C. Fletcher
Keyword(s):  
Relative Intensity ◽  
High Frequency ◽  
Low Frequency ◽  
Relative Intensity Noise ◽  
Intensity Noise ◽  
Dbr Lasers

High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator

2013 ◽  
Vol 47 (5) ◽  
pp. 695-700
Author(s):  
A. M. Nadtochiy ◽  
W. Hofmann ◽  
T. D. Germann ◽  
S. A. Blokhin ◽  
L. Ya. Karachinskiy ◽  
...  
Keyword(s):  
Electrical Properties ◽  
High Frequency ◽  
Optical Modulator ◽  
Cavity Surface ◽  
Monolithically Integrated ◽  
Electro Optical Modulator ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

scholarly journals Monolithically integrated InP-based DBR lasers with an intra-cavity ring resonator

2019 ◽  
Vol 27 (19) ◽  
pp. 26281 ◽  
Author(s):  
Stefanos Andreou ◽  
Kevin A. Williams ◽  
Erwin A. J. M. Bente
Keyword(s):  
Ring Resonator ◽  
Monolithically Integrated ◽  
Dbr Lasers

High-frequency behavior of waveguide integrated photodiodes monolithically integrated on InP using optical butt coupling

1997 ◽  
Vol 81 (6) ◽  
pp. 2511-2516 ◽  
Author(s):  
A. Umbach ◽  
M. Leone ◽  
G. Unterbörsch
Keyword(s):  
High Frequency ◽  
Monolithically Integrated ◽  
Frequency Behavior ◽  
Butt Coupling

Monolithically integrated multiwavelength sampled grating DBR lasers for dense WDM applications

2000 ◽  
Vol 6 (1) ◽  
pp. 197-206 ◽  
Author(s):  
San-Liang Lee ◽  
Ing-Fa Jang ◽  
Chi-Yu Wang ◽  
Ching-Tang Pien ◽  
Tien-Tsorng Shih
Keyword(s):  
Monolithically Integrated ◽  
Dense Wdm ◽  
Sampled Grating ◽  
Dbr Lasers

MQW wavelength-tunable DBR lasers with monolithically integrated external cavity electroabsorption modulators with low-driving voltages fabricated by selective-area MOCVD

1996 ◽  
Vol 8 (6) ◽  
pp. 797-799 ◽  
Author(s):  
R.M. Lammert ◽  
G.M. Smith ◽  
S. Hughes ◽  
M.L. Osowski ◽  
A.M. Jones ◽  
...  
Keyword(s):  
External Cavity ◽  
Electroabsorption Modulators ◽  
Monolithically Integrated ◽  
Wavelength Tunable ◽  
Selective Area ◽  
Dbr Lasers

scholarly journals A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology

2020 ◽  
Vol 10 (6) ◽  
pp. 2183
Author(s):  
Dalal Fadil ◽  
Vikram Passi ◽  
Wei Wei ◽  
Soukaina Ben Salk ◽  
Di Zhou ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
High Frequency ◽  
Field Effect Transistors ◽  
Excellent Performance ◽  
Monolithically Integrated ◽  
Upper Limit ◽  
Ambipolar Behavior ◽  
Active Balun ◽  
Graphene Fet ◽  
Rf Performances

This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs). This innovative active balun concept takes advantage of the GFET ambipolar behavior. It is realized using an advanced silicon carbide (SiC) based bilayer graphene FET technology having RF performances of about 20 GHz. Balun circuit measurement demonstrates its high frequency capability. An upper limit of 6 GHz has been achieved when considering a phase difference lower than 10° and a magnitude of amplitude imbalance less than 0.5 dB. Hence, this circuit topology shows excellent performance with large broadband performance and a functionality of up to one-third of the transit frequency of the transistor.

980 nm DBR Lasers Monolithically Integrated with EA Modulators for Optical Interconnect Applications

2005 ◽  
Author(s):  
Gordon B. Morrison ◽  
Chad S. Wang ◽  
Erik J. Skogen ◽  
Daniel D. Lofgreen ◽  
Larry A. Coldren
Keyword(s):  
Optical Interconnect ◽  
Monolithically Integrated ◽  
Dbr Lasers
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