scholarly journals A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology

2020 ◽  
Vol 10 (6) ◽  
pp. 2183
Author(s):  
Dalal Fadil ◽  
Vikram Passi ◽  
Wei Wei ◽  
Soukaina Ben Salk ◽  
Di Zhou ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
High Frequency ◽  
Field Effect Transistors ◽  
Excellent Performance ◽  
Monolithically Integrated ◽  
Upper Limit ◽  
Ambipolar Behavior ◽  
Active Balun ◽  
Graphene Fet ◽  
Rf Performances

This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs). This innovative active balun concept takes advantage of the GFET ambipolar behavior. It is realized using an advanced silicon carbide (SiC) based bilayer graphene FET technology having RF performances of about 20 GHz. Balun circuit measurement demonstrates its high frequency capability. An upper limit of 6 GHz has been achieved when considering a phase difference lower than 10° and a magnitude of amplitude imbalance less than 0.5 dB. Hence, this circuit topology shows excellent performance with large broadband performance and a functionality of up to one-third of the transit frequency of the transistor.

SiC MESFETs for High-Frequency Applications

MRS Bulletin ◽  
2005 ◽  
Vol 30 (4) ◽  
pp. 308-311 ◽  
Author(s):  
S. Sriram ◽  
A. Ward ◽  
J. Henning ◽  
S. T. Allen
Keyword(s):  
Integrated Circuit ◽  
High Frequency ◽  
Field Effect Transistors ◽  
High Volume ◽  
Junction Temperature ◽  
Time To Failure ◽  
Power Performance ◽  
Operating Life ◽  
Reliability Characteristics ◽  
Improved Performance

AbstractSignificant progress has been made in the development of SiC metal semiconductor field-effect transistors (MESFETs) and monolithic microwave integrated-circuit (MMIC) power amplifiers for high-frequency power applications. Three-inch-diameter high-purity semi-insulating 4H-SiC substrates have been used in this development, enabling high-volume fabrication with improved performance by minimizing surface- and substrate-related trapping issues previously observed in MESFETs. These devices exhibit excellent reliability characteristics, with mean time to failure in excess of 500 h at a junction temperature of 410°C. A sampling of these devices has also been running for over 5000 h in an rf high-temperature operating-life test, with negligible changes in performance. High-power SiC MMIC amplifiers have also been demonstrated with excellent yield and repeatability. These MMIC amplifiers show power performance characteristics not previously available with conventional GaAs technology. These developments have led to the commercial availability of SiC rf power MESFETs and to the release of a foundry process for MMIC fabrication.

High-frequency equivalent circuits of junction-gate field-effect transistors

1970 ◽  
Vol 6 (18) ◽  
pp. 590
Author(s):  
P.U. Calzolari ◽  
S. Graffi ◽  
A. Mazzone
Keyword(s):  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Equivalent Circuits

scholarly journals Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Energies ◽  
2020 ◽  
Vol 13 (1) ◽  
pp. 187 ◽  
Author(s):  
Kamil Bargieł ◽  
Damian Bisewski ◽  
Janusz Zarębski
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dynamic Properties ◽  
Modified Model ◽  
Spice Model ◽  
Capacitance Voltage ◽  
Effect Transistor ◽  
Switching Characteristics

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

Optimization of Detectability in Laser-Based Polarimeters

1989 ◽  
Vol 43 (8) ◽  
pp. 1337-1341 ◽  
Author(s):  
Xiaobing Xi ◽  
Edward S. Yeung
Keyword(s):  
Shot Noise ◽  
Experimental Verification ◽  
High Frequency ◽  
Ohmic Heating ◽  
Unit Length ◽  
Power Input ◽  
Upper Limit ◽  
High Modulation ◽  
Noise Limit ◽  
Shot Noise Limit

To optimize the performance of a laser-based polarimeter, a mathematical simulation was performed. High-modulation currents allow a corresponding increase in signal. However, the effect of ohmic heating puts an upper limit on the power input to the solenoid. With this constraint, one can systematically choose the wire diameter and the number of turns per unit length. An experimental verification of the optimized parameters provided performance approaching the shot-noise limit. By using higher modulation currents, one can operate at 1 kHz to achieve detectability in the microdegree range, without the complications of high-frequency (100 kHz) modulation.

scholarly journals Design and Development of a 3dB Quadrature Patch Hybrid Coupler

2018 ◽  
Vol 7 (2.6) ◽  
pp. 217
Author(s):  
B Sekharbabu ◽  
K Narsimha Reddy ◽  
S Sreenu
Keyword(s):  
Integrated Circuit ◽  
High Frequency ◽  
Return Loss ◽  
Coupling Factor ◽  
Power Combiners ◽  
Measurement Results ◽  
Structure Simulation ◽  
Hybrid Coupler ◽  
Port Device ◽  
Circuit Technology

In this paper a -3 dB, 90-degreephase shift RF quadrature patch hybrid coupler is designed to operate at 2.4GHz. Hybrid coupler is a four-port device, that’s accustomed split a signaling with a resultant 90degrees’ section shift between output signals whereas maintaining high isolation between the output ports. The RF quadrature patch hybrid coupler is used in various radio frequency applications including mixers, power combiners, dividers, modulators and amplifiers. The desired hybrid coupler is designed using FR-4 substrate with 1.6mm height in High Frequency Structure Simulation (HFSS) and the same is fabricated and tested. The designed Hybrid coupler is examined in terms of parameters like insertion Loss, coupling factor and return Loss. The simulation and measurement results are compared. Major advantages of the RF quadrature patch hybrid couplers are that they are compatible with integrated circuit technology.

scholarly journals Numerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3121
Author(s):  
Monica La Mura ◽  
Patrizia Lamberti ◽  
Vincenzo Tucci
Keyword(s):  
High Frequency ◽  
Communication Systems ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Channel Length ◽  
Geometrical Parameters ◽  
Effect Transistor ◽  
Rf Performance ◽  
The Impact

The interest in graphene-based electronics is due to graphene’s great carrier mobility, atomic thickness, resistance to radiation, and tolerance to extreme temperatures. These characteristics enable the development of extremely miniaturized high-performing electronic devices for next-generation radiofrequency (RF) communication systems. The main building block of graphene-based electronics is the graphene-field effect transistor (GFET). An important issue hindering the diffusion of GFET-based circuits on a commercial level is the repeatability of the fabrication process, which affects the uncertainty of both the device geometry and the graphene quality. Concerning the GFET geometrical parameters, it is well known that the channel length is the main factor that determines the high-frequency limitations of a field-effect transistor, and is therefore the parameter that should be better controlled during the fabrication. Nevertheless, other parameters are affected by a fabrication-related tolerance; to understand to which extent an increase of the accuracy of the GFET layout patterning process steps can improve the performance uniformity, their impact on the GFET performance variability should be considered and compared to that of the channel length. In this work, we assess the impact of the fabrication-related tolerances of GFET-base amplifier geometrical parameters on the RF performance, in terms of the amplifier transit frequency and maximum oscillation frequency, by using a design-of-experiments approach.

Sign in / Sign up

Export Citation Format

Share Document