The piezoelectric cantilever resonator is used widely in many fields because of its perfect design, easy-to-control process, easy integration with the integrated circuit. The tip displacement and resonance frequency are two important characters of the piezoelectric cantilever resonator and many models are used to characterize them. However, these models are only suitable for the piezoelectric cantilever with the same width layers. To accurately characterize the piezoelectric cantilever resonators with different width layers, a novel model is proposed for predicting the tip displacement and resonance frequency. The results show that the model is in good agreement with the finite element method (FEM) simulation and experiment measurements, the tip displacement error is no more than 6%, the errors of the first, second, and third-order resonance frequency between theoretical values and measured results are 1.63%, 1.18%, and 0.51%, respectively. Finally, a discussion of the tip displacement of the piezoelectric cantilever resonator when the second layer is null, electrode, or silicon oxide (SiO2) is presented, and the utility of the model as a design tool for specifying the tip displacement and resonance frequency is demonstrated. Furthermore, this model can also be extended to characterize the piezoelectric cantilever with n-layer film or piezoelectric doubly clamped beam.
Stress engineering for polarization control in silicon-on-insulator waveguides and its applications in novel passive polarization splitters/filters