Nanoparticles of Er-doped glass produced by laser ablation of microparticles

2006 ◽  
Vol 23 (8) ◽  
pp. 1581
Author(s):  
John W. Keto ◽  
Michael F. Becker ◽  
Desiderio Kovar ◽  
Gokul Malyavanatham ◽  
Andreas Muller ◽  
...  
Keyword(s):  
Er Doped ◽  
1999 ◽  
Vol 75 (1) ◽  
pp. 97-99 ◽  
Author(s):  
Wai Lek Ng ◽  
M. P. Temple ◽  
P. A. Childs ◽  
F. Wellhofer ◽  
K. P. Homewood

2004 ◽  
Vol 43 (4A) ◽  
pp. 1541-1544 ◽  
Author(s):  
Jeong Sook Ha ◽  
Young Rae Jang ◽  
Keon Ho Yoo ◽  
Chang Hyun Bae ◽  
Sang Hwan Nam ◽  
...  

2019 ◽  
Vol 12 (06) ◽  
pp. 1950080
Author(s):  
Zhou Gao ◽  
Xing Jiang ◽  
Xingbo Wang ◽  
Yongji Chen ◽  
Jian Liu ◽  
...  

Glass frit plays an important role in the silver paste for silicon solar cells. In this work, we prepare glass frit doped with different rare-earth elements (Y, La, Sm, Er) and study how the doping element affects the performance of the solar cells. Solar cells with La-doped and Sm-doped glass frits show average conversion efficiencies higher than 17.5%, while solar cells with Y-doped or Er-doped frit show lower efficiencies. By analyzing the Raman spectra of the rare-earth doped glass frits, we find that the average coordination number of Te–O ([Formula: see text]) in the glass can be tuned by the rare-earth dopant. La or Sm doping leads to a moderate value of [Formula: see text], which is believed to achieve a glass formation ability that optimizes the structure of the Ag–Si interface of the cell for the best performance.


2003 ◽  
Vol 82 (9) ◽  
pp. 1332-1334 ◽  
Author(s):  
Pratheepan Madasamy ◽  
S. Honkanen ◽  
D. F. Geraghty ◽  
N. Peyghambarian

2006 ◽  
Vol 84 (4) ◽  
pp. 395-401 ◽  
Author(s):  
N. Fukata ◽  
C. Li ◽  
H. Morihiro ◽  
K. Murakami ◽  
M. Mitome ◽  
...  

2004 ◽  
Vol 832 ◽  
Author(s):  
N. Fukata ◽  
C. Li ◽  
H. Uematsu ◽  
T. Arai ◽  
T. Makimura ◽  
...  

ABSTRACTHydrogen passivation effect on the enhancement of photoluminescence (PL) of Er ions in SiO2 films contained Si nanocrystallites (nc-Si) has been investigated. Er-doped SiO2 films were fabricated by laser ablation of Er-deposited Si substrate in oxygen gas atmosphere. The PL intensity of Er ions and nc-Si were increased by hydrogen gas treatments, while ESR signal intensity of residual defects located at the interfaces between nc-Si and SiO2 was decreased. These results indicate that hydrogen passivation of residual defects is useful for the enhancement of the Er PL.


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