Graphene-coupled silica microtoroid for optical polarization controlling and electro-optic modulation

Author(s):  
huibo fan ◽  
Qiming Yin ◽  
Cong Lu ◽  
Hongwei Fan
1990 ◽  
Vol 200 ◽  
Author(s):  
A. Y. Wu ◽  
Feiling Wang ◽  
Ching-Bo Juang ◽  
Carlos Bustamante

ABSTRACTThe electro-optic properties of sputter-deposited PLZT, BaTiO3, SBN, and BNN films on fused silica substrates have been studied using a confocal scanning optical polarization microscope. The Pockels, Kerr, and higher order electro-optic coefficients and their relations to the non-linear optical coefficients in the films are presented. The materials and physical properties of the films are discussed.


ETRI Journal ◽  
1997 ◽  
Vol 18 (4) ◽  
pp. 287-299 ◽  
Author(s):  
Min-Cheol Oh Oh ◽  
Wol-Yon Hwang Hwang ◽  
Jang-Joo Kim Kim

1967 ◽  
Vol 31 ◽  
pp. 381-383
Author(s):  
J. M. Greenberg

Van de Hulst (Paper 64, Table 1) has marked optical polarization as a questionable or marginal source of information concerning magnetic field strengths. Rather than arguing about this–I should rate this method asq+-, or quarrelling about the term ‘model-sensitive results’, I wish to stress the historical point that as recently as two years ago there were still some who questioned that optical polarization was definitely due to magnetically-oriented interstellar particles.


Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.


1997 ◽  
Vol 7 (9) ◽  
pp. 1893-1898 ◽  
Author(s):  
G. Schirripa Spagnolo ◽  
D. Ambrosini ◽  
A. Ponticiello ◽  
D. Paoletti

2012 ◽  
Vol 132 (9) ◽  
pp. 727-733
Author(s):  
Masahiko Tani ◽  
Michael I. Bakunov ◽  
Kohji Yamamoto ◽  
Kazuki Horita ◽  
Tetsuya Kinoshita ◽  
...  

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.


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