Theoretical Study on the Optoelectronic Properties of Al1-xGaxN-Based Deep UV LEDs with Single and Multiple Quantum Well Heterostructures

2021 ◽  
Author(s):  
Galih Ramadana Suwito ◽  
Ya-Hsuan Shih ◽  
Sung-Wen Huang Chen ◽  
Zi-Hui Zhang ◽  
Hao-Chung Kuo
Keyword(s):  
Quantum Well ◽  
Theoretical Study ◽  
Multiple Quantum Well ◽  
Optoelectronic Properties ◽  
Multiple Quantum ◽  
Deep Uv ◽  
Uv Leds

Effects of Spontaneous Polarization on Luminous Power of GaN/AlGaN Multiple Quantum Well UV-LEDs for Light Technology

2021 ◽  
Author(s):  
Samadrita Das ◽  
Trupti Ranjan Lenka ◽  
Fazal A. Talukdar ◽  
Ravi Teja Velpula ◽  
Barsha Jain ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spontaneous Polarization ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Uv Leds

Growth and Characterization of Deep UV Emitter Structures Grown on Single Crystal Bulk AlN Substrates

2002 ◽  
Vol 743 ◽  
Author(s):  
X. Hu ◽  
R. Gaska ◽  
C. Chen ◽  
J. Yang ◽  
E. Kuokstis ◽  
...  
Keyword(s):  
Quantum Well ◽  
Single Crystal ◽  
Multiple Quantum Well ◽  
Blue Shift ◽  
Stimulated Emission ◽  
Localized States ◽  
Light Sources ◽  
Multiple Quantum ◽  
X Ray ◽  
Deep Uv

ABSTRACTWe report on high Al-content AlGaN-based deep UV emitter structures grown over single crystal, slightly off c-axis (5.8 degrees) bulk AlN substrates. AlN/AlGaN multiple quantum well (MQW) structures with up to 50% of Al in the well material were grown by using low-pressure MOCVD and characterized by using X-ray, AFM, SEM and photoluminescence techniques. Two light sources, one at 213 nm wavelength for selective excitation of quantum well layers and another one at 193 nm to excite both wells and barriers, were exploited. A weak temperature dependence (from 8 K to 300 K) of the luminescence intensity and the absence of blue-shift of the luminescence peak with increasing excitation intensity pointed to a low density of localized states, in a good agreement with the X-ray data, which indicated very high quality of these MQW structures.The most striking result was observation of stimulated emission at wavelength as short as 258 nm in Al0.5Ga0.5N/AlN MQWs grown on bulk AlN single crystals.

Luminescence efficiency of InGaN multiple quantum well UV-LEDs

2004 ◽  
Author(s):  
Chang-Chi Pan ◽  
Chia-Ming Lee ◽  
Wen-Jay Hsu ◽  
Guan-Ting Chen ◽  
Jen-Inn Chyi
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Luminescence Efficiency ◽  
Uv Leds

Deep Ultraviolet Light Emitting Diodes with Emission below 300 nm

2005 ◽  
Vol 892 ◽  
Author(s):  
M. Asif Khan
Keyword(s):  
Multiple Quantum Well ◽  
Structure Design ◽  
Multiple Quantum ◽  
Device Structure ◽  
Light Emitting ◽  
Uv Led ◽  
Excellent Research ◽  
Deep Uv ◽  
P Type ◽  
Uv Leds

AbstractIn this paper we will describe the problems in growth and fabrication of deep UV LED devices and the approaches that we have used to grow AlGaN-based multiple quantum well deep UV LED structures and to overcome issues of doping efficiency, cracking, and slow growth rates both for the n- and the p-type layers of the device structures. Several innovations in structure growth, device structure design and fabrication and packaging have led to the fabrication of devices with emission from 250-300 nm and cw-milliwatt powers at pump currents of only 20 mA (Vf ≤ 6 V). Record wall plug efficiencies above 1.5 % are now achievable for devices with emission at 280 nm. Thermal management and a proper device design are not only key factors in achieving these record performance numbers but are also crucial to device reliability. We will also discuss some of our initial research to clarify the factors influencing the lifetime of the deep UV LEDs. In addition to our own work, we will review the results from the excellent research carried out at several other laboratories worldwide.

Optoelectronic properties of InGaAs/InGaAsP multiple-quantum-well waveguide detectors

1989 ◽  
Vol 1 (11) ◽  
pp. 376-378 ◽  
Author(s):  
F.S. Choa ◽  
T.L. Koch ◽  
U. Koren ◽  
B.I. Miller
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Optoelectronic Properties ◽  
Multiple Quantum
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