Impact of spectral hole-burning for EDFAs operated in the long-wavelength band

AbstractThis work studies the total gain of the InTlAsSb quantum dot structure, which is not studied earlier. Adding thallium to structures makes it emit at larger wavelengths. The nonlinear effect of the injected signal power is examined for three quaternary thallium structures: In0.85Tl0.15AsSb, In0.93Tl0.07AsSb and In0.97Tl0.03AsSb. The gain peak was increased by four times and the wavelength was shifted to longer one for the In0.97Tl0.03AsSb quantum dot (QD) structure. This quaternary QD structure extends the emission wavelength to more than 12 μm which is important in long-wavelength infrared applications. The nonlinear behavior of these QD structures is also addressed. It is shown that the structure In0.97Tl0.03AsSb has a deeper spectral hole burning which is adequate for nonlinear signal processing applications.

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A spectral hole-burning study of long-wavelength chlorophyllaforms in greening leaves at 5 K

FEBS Letters ◽

10.1016/0014-5793(87)80529-x ◽

1987 ◽

Vol 223 (1) ◽

pp. 165-168 ◽

Cited By ~ 9

Author(s):

Koit Mauring ◽

Indrek Renge ◽

Rein Avarmaa

Keyword(s):

Hole Burning ◽

Spectral Hole Burning ◽

Long Wavelength ◽

Spectral Hole

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FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:19875109 ◽

1987 ◽

Vol 48 (C5) ◽

pp. C5-511-C5-515 ◽

Cited By ~ 1

Author(s):

J. L. OUDAR ◽

J. DUBARD ◽

F. ALEXANDRE ◽

D. HULIN ◽

A. MIGUS ◽

...

Keyword(s):

Quantum Wells ◽

Multiple Quantum Wells ◽

Hole Burning ◽

Spectral Hole Burning ◽

Multiple Quantum ◽

Spectral Hole

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Investigation of the V4+-Centre in 6H- and 4H-SIC by the Method of Spectral-Hole Burning

MRS Proceedings ◽

10.1557/proc-512-369 ◽

1998 ◽

Vol 512 ◽

Author(s):

C. Hecht ◽

R. Kummer ◽

A. Winnacker

Keyword(s):

Electronic Properties ◽

Room Temperature ◽

Hole Burning ◽

Band Offset ◽

Spectral Hole Burning ◽

Type Ii ◽

Thermally Stable ◽

Spectral Hole

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.

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