AbstractIn this study, we calculate the photoionization cross section and refractive-index change of an on-center hydrogenic impurity in a CdS-SiO2 spherical quantum dot. In numerical calculations, both the finite- and infinite-confinement cases are considered and a variational scheme is adopted to determine the energy eigenvalues for the impurity. The variations of the photoionization cross section with the dot radius, the refractive-index change, and the normalized photon energy are investigated, and the effect of the potential-barrier height on the cross section is discussed. The results obtained show that the photoionization cross section and the refractive-index change in CdS-SiO2 spherical quantum dots are sensitively dependent on the incident optical intensity and on the dot sizes.
Theoretical study of polarization dependence of carrier-induced refractive index change of quantum dot
