AbstractAlxGa1-xN/ AlyGa1-yN Distributed Bragg Reflectors (DBRs) with up to 45 periods have been grown on (0001) sapphire substrates by r.f. plasma-assisted molecular beam epitaxy (PAMBE) with the aid of two Al effusion cells. Several samples were grown with an Al mole fraction varying between 0.38 ≤ x ≤ 1 (0 ≤ y ≤ 0.4) at temperatures of up to 890°C. In all samples, an AlxGa1-xN buffer layer was used to prevent cracking of the quarter wave stack and improving surface morphology by choosing the Al content so that strain energy in the DBR structure would be compensated.X-ray diffraction (XRD) and scanning electron microscopy (SEM) investigations were performed to determine the thickness of the quarter wave layer periods and the Al mole fraction of corresponding AlxGa1-xN single layers.Room-temperature calibrated reflection and transmission (R&T) measurements were performed. Thus stray and self-absorption of the DBRs were extracted from reflectance and transmittance. The thickness of the quarter wave layers was designed such that the measured peak reflectances appeared between 346 nm to 421 nm. The dispersion data, including refractive indices and absorption coefficients, used in the calculation were extracted from R&T measurements done on the above mentioned AlxGa1-xN single layers.
Effects and mechanisms of In surfactant on high Al-content AlGaN grown by plasma-assisted molecular beam epitaxy
