scholarly journals Effects and mechanisms of In surfactant on high Al-content AlGaN grown by plasma-assisted molecular beam epitaxy

2021 ◽  
Author(s):  
Haolin Jia ◽  
Wenxian Yang ◽  
Xue Zhang ◽  
Xiangpeng Zhou ◽  
Haibing Qiu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Al Content ◽  
High Al Content

Extremely flat interfaces in GaAs/AlGaAs quantum wells with high Al content (0.7) grown on GaAs (411)A substrates by molecular beam epitaxy

1995 ◽  
Vol 150 ◽  
pp. 409-414 ◽  
Author(s):  
Satoshi Shimomura ◽  
Shinjiroh Kaneko ◽  
Takeharu Motokawa ◽  
Keisuke Shinohara ◽  
Akira Adachi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Al Content ◽  
High Al Content

High Al-content AlxGa1−xN epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy

2009 ◽  
Vol 487 (1-2) ◽  
pp. 24-27 ◽  
Author(s):  
A.SH. Hussein ◽  
S.M. Thahab ◽  
Z. Hassan ◽  
C.W. Chin ◽  
H. Abu Hassan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrate ◽  
Al Content ◽  
High Al Content

High-Al-content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy

2003 ◽  
Vol 82 (4) ◽  
pp. 499-501 ◽  
Author(s):  
F. Natali ◽  
D. Byrne ◽  
A. Dussaigne ◽  
N. Grandjean ◽  
J. Massies ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Al Content ◽  
High Al Content

Anomalously low Ga incorporation in high Al-content AlGaN grown on $(11{\bar {2}}0)$ non-polar plane by molecular beam epitaxy

2011 ◽  
Vol 208 (7) ◽  
pp. 1498-1500 ◽  
Author(s):  
Shunsaku Ueta ◽  
Masahiro Horita ◽  
Tsunenobu Kimoto ◽  
Jun Suda
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Polar Plane ◽  
Al Content ◽  
High Al Content

Optical properties of high-Al-content crack free AlxGa1−xN (x<0.67) films grown on Si(111) by molecular-beam epitaxy

2004 ◽  
Vol 132 (10) ◽  
pp. 679-682 ◽  
Author(s):  
F. Natali ◽  
D. Byrne ◽  
M. Leroux ◽  
F. Semond ◽  
J. Massies
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Al Content ◽  
High Al Content

Ternary AlGaN Alloys with High Al Content and Enhanced Compositional Homogeneity Grown by Plasma-Assisted Molecular Beam Epitaxy

2011 ◽  
Vol 50 (3R) ◽  
pp. 031001 ◽  
Author(s):  
Vincent Fellmann ◽  
Périne Jaffrennou ◽  
Diane Sam-Giao ◽  
Bruno Gayral ◽  
Katharina Lorenz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Al Content ◽  
Compositional Homogeneity ◽  
High Al Content

Ternary AlGaN Alloys with High Al Content and Enhanced Compositional Homogeneity Grown by Plasma-Assisted Molecular Beam Epitaxy

2011 ◽  
Vol 50 ◽  
pp. 031001 ◽  
Author(s):  
Vincent Fellmann ◽  
Périne Jaffrennou ◽  
Diane Sam-Giao ◽  
Bruno Gayral ◽  
Katharina Lorenz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Al Content ◽  
Compositional Homogeneity ◽  
High Al Content

Pulsed growth techniques in plasma-assisted molecular beam epitaxy of Al Ga1−N layers with medium Al content (x=0.4–0.6)

2015 ◽  
Vol 425 ◽  
pp. 9-12 ◽  
Author(s):  
D.V. Nechaev ◽  
P.N. Brunkov ◽  
S.I. Troshkov ◽  
V.N. Jmerik ◽  
S.V. Ivanov
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Al Content

Influence of Al content on formation of InAlGaAs quantum dots grown by molecular beam epitaxy

1997 ◽  
Vol 82 (12) ◽  
pp. 6362-6364 ◽  
Author(s):  
O. Baklenov ◽  
D. L. Huffaker ◽  
A. Anselm ◽  
D. G. Deppe ◽  
B. G. Streetman
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Al Content

Characterization of AlxGa1-xN/ AlyGa1-yN Distributed Bragg Reflectors Grown by Plasma Assisted Molecular Beam Epitaxy

2001 ◽  
Vol 693 ◽  
Author(s):  
H. Klausing ◽  
F. Fedler ◽  
T. Rotter ◽  
D. Mistele ◽  
O. Semchinova ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Mole Fraction ◽  
Molecular Beam ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
X Ray Diffraction ◽  
Al Content ◽  
Dispersion Data ◽  
Quarter Wave

AbstractAlxGa1-xN/ AlyGa1-yN Distributed Bragg Reflectors (DBRs) with up to 45 periods have been grown on (0001) sapphire substrates by r.f. plasma-assisted molecular beam epitaxy (PAMBE) with the aid of two Al effusion cells. Several samples were grown with an Al mole fraction varying between 0.38 ≤ x ≤ 1 (0 ≤ y ≤ 0.4) at temperatures of up to 890°C. In all samples, an AlxGa1-xN buffer layer was used to prevent cracking of the quarter wave stack and improving surface morphology by choosing the Al content so that strain energy in the DBR structure would be compensated.X-ray diffraction (XRD) and scanning electron microscopy (SEM) investigations were performed to determine the thickness of the quarter wave layer periods and the Al mole fraction of corresponding AlxGa1-xN single layers.Room-temperature calibrated reflection and transmission (R&T) measurements were performed. Thus stray and self-absorption of the DBRs were extracted from reflectance and transmittance. The thickness of the quarter wave layers was designed such that the measured peak reflectances appeared between 346 nm to 421 nm. The dispersion data, including refractive indices and absorption coefficients, used in the calculation were extracted from R&T measurements done on the above mentioned AlxGa1-xN single layers.

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