Influence of Al content on formation of InAlGaAs quantum dots grown by molecular beam epitaxy

1997 ◽  
Vol 82 (12) ◽  
pp. 6362-6364 ◽  
Author(s):  
O. Baklenov ◽  
D. L. Huffaker ◽  
A. Anselm ◽  
D. G. Deppe ◽  
B. G. Streetman
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Al Content

Tunable Ferromagnetism above Room-Temperature in Self-Assembled (In,Mn)As Diluted Magnetic Semiconductor Quantum Dots on Be-Doped AlxGa1-XAs Template by Molecular Beam Epitaxy

2012 ◽  
Vol 476-478 ◽  
pp. 793-798
Author(s):  
Hao Min Guo ◽  
Xin Hua Li ◽  
Zhi Fei Zhao ◽  
Yu Qi Wang
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Quantum Interference ◽  
Molecular Beam ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Spintronic Devices ◽  
Al Content ◽  
Self Assembled ◽  
Diluted Magnetic

With the introduction of Be-doped AlxGa1-xAs template, self-assembled In0.79Mn0.21As quantum dots samples were prepared on semi-insulating (001) GaAs substrates by molecular beam epitaxy. High quantum dots density was confirmed by the atomic force microscopy. The ferromagnetism of the samples was revealed by superconducting quantum interference device magnetometer analysis at 10K, and the Curie temperatures ranging from 292 to 314K were able to be regulated by adjusting Al content and Be dopant in Be-doped AlxGa1-xAs templates, implying the feasible application of spintronic devices.

Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy

2004 ◽  
Vol 269 (2-4) ◽  
pp. 181-186 ◽  
Author(s):  
G.X. Shi ◽  
P. Jin ◽  
B. Xu ◽  
C.M. Li ◽  
C.X. Cui ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Annealing Effect

InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy

2001 ◽  
Vol 89 (7) ◽  
pp. 4186-4188 ◽  
Author(s):  
Y. F. Li ◽  
J. Z. Wang ◽  
X. L. Ye ◽  
B. Xu ◽  
F. Q. Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Assembled

Excitonic Luminescence from Self-Organized Quantum Dots of CdTe Grown by Molecular Beam Epitaxy

1999 ◽  
Vol 38 (Part 1, No. 4B) ◽  
pp. 2524-2528 ◽  
Author(s):  
Shinji Kuroda ◽  
Yoshikazu Terai ◽  
Kôki Takita ◽  
Tsuyoshi Okuno ◽  
Yasuaki Masumoto
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Organized ◽  
Excitonic Luminescence

Growth and optical properties of ZnTe quantum dots on ZnMgSe by molecular beam epitaxy

2015 ◽  
Vol 425 ◽  
pp. 186-190 ◽  
Author(s):  
W.C. Fan ◽  
S.H. Huang ◽  
W.C. Chou ◽  
M.H. Tsou ◽  
C.S. Yang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

Molecular beam epitaxy based growth of cubic GaN quantum dots

2011 ◽  
Vol 8 (5) ◽  
pp. 1495-1498 ◽  
Author(s):  
T. Schupp ◽  
T. Meisch ◽  
B. Neuschl ◽  
M. Feneberg ◽  
K. Thonke ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cubic Gan

scholarly journals Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy

Nanoscale ◽  
2015 ◽  
Vol 7 (36) ◽  
pp. 14822-14828 ◽  
Author(s):  
Dingxun Fan ◽  
Sen Li ◽  
N. Kang ◽  
Philippe Caroff ◽  
L. B. Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Transport ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Electron ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Dots ◽  
Single Electron Transport ◽  
Insb Nanowires

Single electron transport is demonstrated in high-quality MBE-grown InSb nanowire single quantum dots with a dot length up to ∼700 nm.

scholarly journals Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

2019 ◽  
Vol 126 (20) ◽  
pp. 205701 ◽  
Author(s):  
J. Brault ◽  
S. Matta ◽  
T.-H. Ngo ◽  
M. Al Khalfioui ◽  
P. Valvin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam
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