Terahertz tunable optically induced lattice in the magnetized monolayer graphene

In this work we have critically reviewed the processes in high-temperature sublimation growth of graphene in Ar atmosphere using closed graphite crucible. Special focus is put on buffer layer formation and free charge carrier properties of monolayer graphene and quasi-freestanding monolayer graphene on 4H–SiC. We show that by introducing Ar at higher temperatures, TAr, one can shift the formation of the buffer layer to higher temperatures for both n-type and semi-insulating substrates. A scenario explaining the observed suppressed formation of buffer layer at higher TAr is proposed and discussed. Increased TAr is also shown to reduce the sp3 hybridization content and defect densities in the buffer layer on n-type conductive substrates. Growth on semi-insulating substrates results in ordered buffer layer with significantly improved structural properties, for which TAr plays only a minor role. The free charge density and mobility parameters of monolayer graphene and quasi-freestanding monolayer graphene with different TAr and different environmental treatment conditions are determined by contactless terahertz optical Hall effect. An efficient annealing of donors on and near the SiC surface is suggested to take place for intrinsic monolayer graphene grown at 2000 ∘C, and which is found to be independent of TAr. Higher TAr leads to higher free charge carrier mobility parameters in both intrinsically n-type and ambient p-type doped monolayer graphene. TAr is also found to have a profound effect on the free hole parameters of quasi-freestanding monolayer graphene. These findings are discussed in view of interface and buffer layer properties in order to construct a comprehensive picture of high-temperature sublimation growth and provide guidance for growth parameters optimization depending on the targeted graphene application.

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Optically Induced Field-Emission Source Based on Aligned Vertical Carbon Nanotube Arrays

Nanomaterials ◽

10.3390/nano11071810 ◽

2021 ◽

Vol 11 (7) ◽

pp. 1810

Author(s):

Mengjie Li ◽

Qilong Wang ◽

Ji Xu ◽

Jian Zhang ◽

Zhiyang Qi ◽

...

Keyword(s):

Carbon Nanotube ◽

Electric Field ◽

Field Emission ◽

Field Enhancement ◽

Absorption Efficiency ◽

Photon Absorption ◽

Nanotube Arrays ◽

Carbon Nanotube Arrays ◽

Induced Field ◽

Optically Induced

Due to the high field enhancement factor and photon-absorption efficiency, carbon nanotubes (CNTs) have been widely used in optically induced field-emission as a cathode. Here, we report vertical carbon nanotube arrays (VCNTAs) that performed as high-density electron sources. A combination of high applied electric field and laser illumination made it possible to modulate the emission with laser pulses. When the bias electric field and laser power density increased, the emission process is sensitive to a power law of the laser intensity, which supports the emission mechanism of optically induced field emission followed by over-the-barrier emission. Furthermore, we determine a polarization dependence that exhibits a cosine behavior, which verifies the high possibility of optically induced field emission.

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