Large-Scale Silicon Photonic Switch

Author(s):  
Eric Bernier ◽  
Patrick Dumais ◽  
Dominic J. Goodwill ◽  
Hamid Mehrvar ◽  
Dritan Celo ◽  
...  
2020 ◽  
Vol 10 (23) ◽  
pp. 8688
Author(s):  
Marouan Kouissi ◽  
Benoit Charbonnier ◽  
Catherine Algani

Building a large-scale Mach-Zehnder-based silicon photonic switch circuit (LS-MZS) requires an appropriate choice of architecture. In this work, we propose, for the first time to our knowledge, a single metric that can be used to compare different topologies. We propose an accurate analytical model of the signal-to-crosstalk ratio (SCR) that highlights the performance limitations of the main building blocks: Mach-Zehnder interferometers (MZI) and waveguide crossings. It is based on the cumulative crosstalk and total insertion loss of the LS-MZS. Four different architectures: Beneš, dilated Beneš, switch and select, double-layer network were studied for the reason that they are mainly referenced in the literature. We compared them using our developed SCR indicator. With reference to the state-of-the-art technology, the analysis of the four architectures using SCR showed that, on a large scale, a high number of waveguide crossings significantly affects the performance of the switch matrix. Moreover, better performance was reached using the double-layer-network architecture. Then, we presented a 2 × 2 MZI using two electro-optic phase shifters and a waveguide crossing realized in LETI’s silicon photonics technology. Measured performances were quite good: the switch circuit had a crosstalk of −31.3 dB and an insertion loss estimated to be less than 1.31 dB.


Nanophotonics ◽  
2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Wei Shi ◽  
Ye Tian ◽  
Antoine Gervais

AbstractThe tremendous growth of data traffic has spurred a rapid evolution of optical communications for a higher data transmission capacity. Next-generation fiber-optic communication systems will require dramatically increased complexity that cannot be obtained using discrete components. In this context, silicon photonics is quickly maturing. Capable of manipulating electrons and photons on the same platform, this disruptive technology promises to cram more complexity on a single chip, leading to orders-of-magnitude reduction of integrated photonic systems in size, energy, and cost. This paper provides a system perspective and reviews recent progress in silicon photonics probing all dimensions of light to scale the capacity of fiber-optic networks toward terabits-per-second per optical interface and petabits-per-second per transmission link. Firstly, we overview fundamentals and the evolving trends of silicon photonic fabrication process. Then, we focus on recent progress in silicon coherent optical transceivers. Further scaling the system capacity requires multiplexing techniques in all the dimensions of light: wavelength, polarization, and space, for which we have seen impressive demonstrations of on-chip functionalities such as polarization diversity circuits and wavelength- and space-division multiplexers. Despite these advances, large-scale silicon photonic integrated circuits incorporating a variety of active and passive functionalities still face considerable challenges, many of which will eventually be addressed as the technology continues evolving with the entire ecosystem at a fast pace.


2020 ◽  
Vol 10 (13) ◽  
pp. 4507
Author(s):  
Vinh Huu Nguyen ◽  
In Ki Kim ◽  
Tae Joon Seok

A silicon photonic 3-dB power splitter is one of the essential components to demonstrate large-scale silicon photonic integrated circuits (PICs), and can be utilized to implement modulators, 1 × 2 switches, and 1 × N power splitters for various PIC applications. In this paper, we reported the design and experimental demonstration of low-loss and broadband silicon photonic 3-dB power splitters. The power splitter was realized by adiabatically tapered rib waveguides with 60-nm shallow etches. The shallow-etched rib waveguides offered strong coupling and relaxed critical dimensions (a taper tip width of 200 nm and gap spacing of 300 nm). The fabricated device exhibited an excess loss as low as 0.06 dB at a 1550-nm wavelength and a broad operating wavelength range from 1470 nm to 1570 nm. The relaxed critical dimensions (≥200 nm) make the power splitter compatible with standard fabrication processes of existing silicon photonics foundries.


2020 ◽  
Vol 26 (2) ◽  
pp. 1-10 ◽  
Author(s):  
Qixiang Cheng ◽  
Yishen Huang ◽  
Hao Yang ◽  
Meisam Bahadori ◽  
Nathan Abrams ◽  
...  

2015 ◽  
Vol 23 (2) ◽  
pp. 1159 ◽  
Author(s):  
Dessislava Nikolova ◽  
Sébastien Rumley ◽  
David Calhoun ◽  
Qi Li ◽  
Robert Hendry ◽  
...  

2011 ◽  
Vol 29 (8) ◽  
pp. 1136-1142 ◽  
Author(s):  
Benjamin G. Lee ◽  
Clint L. Schow ◽  
Alexander V. Rylyakov ◽  
Joris Van Campenhout ◽  
William M. J. Green ◽  
...  

Author(s):  
Yusuke Kohno ◽  
Kento Komatsu ◽  
Yasuyuki Ozeki ◽  
Yoshiaki Nakano ◽  
Takuo Tanemura

2020 ◽  
Vol 46 (1) ◽  
pp. 78
Author(s):  
Lijia Song ◽  
Huan Li ◽  
Daoxin Dai

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