scholarly journals Low-Loss and Broadband Silicon Photonic 3-dB Power Splitter with Enhanced Coupling of Shallow-Etched Rib Waveguides

2020 ◽  
Vol 10 (13) ◽  
pp. 4507
Author(s):  
Vinh Huu Nguyen ◽  
In Ki Kim ◽  
Tae Joon Seok

A silicon photonic 3-dB power splitter is one of the essential components to demonstrate large-scale silicon photonic integrated circuits (PICs), and can be utilized to implement modulators, 1 × 2 switches, and 1 × N power splitters for various PIC applications. In this paper, we reported the design and experimental demonstration of low-loss and broadband silicon photonic 3-dB power splitters. The power splitter was realized by adiabatically tapered rib waveguides with 60-nm shallow etches. The shallow-etched rib waveguides offered strong coupling and relaxed critical dimensions (a taper tip width of 200 nm and gap spacing of 300 nm). The fabricated device exhibited an excess loss as low as 0.06 dB at a 1550-nm wavelength and a broad operating wavelength range from 1470 nm to 1570 nm. The relaxed critical dimensions (≥200 nm) make the power splitter compatible with standard fabrication processes of existing silicon photonics foundries.

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1304
Author(s):  
Raquel Fernández de Cabo ◽  
David González-Andrade ◽  
Pavel Cheben ◽  
Aitor V. Velasco

Efficient power splitting is a fundamental functionality in silicon photonic integrated circuits, but state-of-the-art power-division architectures are hampered by limited operational bandwidth, high sensitivity to fabrication errors or large footprints. In particular, traditional Y-junction power splitters suffer from fundamental mode losses due to limited fabrication resolution near the junction tip. In order to circumvent this limitation, we propose a new type of high-performance Y-junction power splitter that incorporates subwavelength metamaterials. Full three-dimensional simulations show a fundamental mode excess loss below 0.1 dB in an ultra-broad bandwidth of 300 nm (1400–1700 nm) when optimized for a fabrication resolution of 50 nm, and under 0.3 dB in a 350 nm extended bandwidth (1350–1700 nm) for a 100 nm resolution. Moreover, analysis of fabrication tolerances shows robust operation for the fundamental mode to etching errors up to ± 20 nm. A proof-of-concept device provides an initial validation of its operation principle, showing experimental excess losses lower than 0.2 dB in a 195 nm bandwidth for the best-case resolution scenario (i.e., 50 nm).


Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 910 ◽  
Author(s):  
Rongbo Wu ◽  
Min Wang ◽  
Jian Xu ◽  
Jia Qi ◽  
Wei Chu ◽  
...  

In this paper, we develop a technique for realizing multi-centimeter-long lithium niobate on insulator (LNOI) waveguides with a propagation loss as low as 0.027 dB/cm. Our technique relies on patterning a chromium thin film coated on the top surface of LNOI into a hard mask with a femtosecond laser followed by chemo-mechanical polishing for structuring the LNOI into the waveguides. The surface roughness on the waveguides was determined with an atomic force microscope to be 0.452 nm. The approach is compatible with other surface patterning technologies, such as optical and electron beam lithographies or laser direct writing, enabling high-throughput manufacturing of large-scale LNOI-based photonic integrated circuits.


2019 ◽  
Vol 9 (16) ◽  
pp. 3410 ◽  
Author(s):  
Xiangxin Huang ◽  
Gengxin Chen ◽  
Wen Zhou ◽  
Xuguang Huang

In this paper, the cm-level photonic-crystal-like subwavelength waveguide platform is developed and analyzed by using the finite-difference time-domain method. The configuration can be considered as a hybrid waveguide combining with the advantages of a metal-dielectric-metal waveguide and a photonic crystal waveguide. The symmetric and high reflection effect of metallic sidewall and the effect of the photonic crystal structure on the light-guiding mechanism and integration characteristics of the waveguide are systematically investigated. The results reveal that the cm-level photonic-crystal-like waveguide platform provides subwavelength confinement and very low propagation loss with the isolation more than 30 dB, which are promising for high-density photonic integration. The tradeoff between integration density and propagation loss is optimized. In addition, a T-shaped power splitter based on the waveguide platform is proposed. The excess loss of the T-shaped power splitter is less than 0.4 dB. A set of passive components can be exploited on the proposed cm-level photonic-crystal-like subwavelength waveguide platform in future work to constitute the large-scale integrated photonic systems.


2021 ◽  
Vol 60 (2) ◽  
pp. 413
Author(s):  
Junbo Zhu ◽  
Qiu Chao ◽  
Haiyang Huang ◽  
Yingxuan Zhao ◽  
Yang Li ◽  
...  

2021 ◽  
Author(s):  
MADHUSUDAN MISHRA ◽  
Nikhil Das

In this letter, we propose a new approach of hetero-cladding for realization of compact CMOS compatible silicon photonic directional couplers. The proposed hetero-cladding comprises ferroelectric BaTiO<sub>3</sub> (BTO) and SiO<sub>2</sub> to control the evanescent mode within the structure. The results show very small and identical coupling length for both TE and TM modes with reduced device cross-section, which promises for a huge reduction in the footprint of both conventional and programmable photonic integrated circuits. The concept can also be utilized to design compact, low loss and energy efficient phase shifters, other types of couplers, sensors etc.


2021 ◽  
Author(s):  
MADHUSUDAN MISHRA ◽  
Nikhil Das

<p><i>Abstract</i>— The present work proposes a new approach of hetero-cladding for silicon photonic directional couplers and outlines its contributions towards realization of a compact, tunable and energy efficient directional coupler. The proposed hetero-cladding comprises ferroelectric BaTiO<sub>3</sub> (BTO) and SiO<sub>2</sub>, to control the evanescent mode within the structure. The results show very small and identical coupling length for both TE and TM modes with reduced device cross-section, which promises for a huge reduction in the footprint of both conventional and programmable photonic integrated circuits (PICs). The proposed concept could also be utilized to design compact, low loss and energy efficient phase shifters and other types of couplers.</p>


2021 ◽  
Author(s):  
MADHUSUDAN MISHRA ◽  
Nikhil Das

In this letter, we propose a new approach of hetero-cladding for realization of compact CMOS compatible silicon photonic directional couplers. The proposed hetero-cladding comprises ferroelectric BaTiO<sub>3</sub> (BTO) and SiO<sub>2</sub> to control the evanescent mode within the structure. The results show very small and identical coupling length for both TE and TM modes with reduced device cross-section, which promises for a huge reduction in the footprint of both conventional and programmable photonic integrated circuits. The concept can also be utilized to design compact, low loss and energy efficient phase shifters, other types of couplers, sensors etc.


2021 ◽  
Author(s):  
Hongyan Yu ◽  
Xinyu Sun ◽  
Dasai Ban ◽  
Feng Qiu

Abstract Transmission of the fundamental mode in multi-mode waveguides is an effective scheme for a silicon-based platform to reduce scattering loss. However, the application of the scheme is usually limited to straight waveguides and restricted in multi-mode bending waveguides. This is because the fundamental mode of a straight waveguide is seriously disordered after passing the bend. In this work, we have presented a “matched bending radius” approach, by which an ultra-low loss and negligible modal disorder have been demonstrated in the Si and Si3N4 multi-mode waveguides. The estimated optical field overlap factor is almost 0 dB at the matched bending radius, indicating that the fundamental mode can be re-generated after passing the multi-mode bending waveguide. The proposed approach will contribute to applying the low loss scheme in large-scale photonic integrated circuits.


Sign in / Sign up

Export Citation Format

Share Document