Nonlinear polarization switching near half the band gap in semiconductors

1993 ◽  
Vol 18 (18) ◽  
pp. 1487 ◽  
Author(s):  
C. C. Yang ◽  
Alain Villeneuve ◽  
Cheng-Hui Lin ◽  
Hao-Hsiung Lin ◽  
George I. Stegeman ◽  
...  
2015 ◽  
Vol 252 (5) ◽  
pp. 879-884 ◽  
Author(s):  
Conor Coughlan ◽  
Stefan Schulz ◽  
Miguel A. Caro ◽  
Eoin P. O'Reilly

The results of an experimental investigation ol nonlinearities and bistability at the band gap in InAs are presented. Bistability was observed in reflection at 3 mW with a HF laser by using the large nonlinearity at the band-gap resonance in InAs. The measured nonlinear refractive index is shown quantitatively to agree with the dynamic Burstein—Moss shift as the mechanism, as long as both the full Fermi-Dirac statistics and the effect of light holes are included in the calculation. In a separate study a theoretical analysis has investigated general conditions for intrinsic bistability without cavities. It is shown that bistability can result from a nonlinear constitutive relation. Specific calculations are presented for bistability due to nonlinear polarization.


Author(s):  
I-Ning Hu ◽  
Cheng Zhu ◽  
Michael Haines ◽  
Timothy S. McComb ◽  
Geoff Fanning ◽  
...  

1989 ◽  
Vol 25 (1) ◽  
pp. 104-112 ◽  
Author(s):  
S. Trillo ◽  
S. Wabnitz ◽  
W.C. Banyai ◽  
N. Finlayson ◽  
C.T. Seaton ◽  
...  

1988 ◽  
Vol 53 (10) ◽  
pp. 837-839 ◽  
Author(s):  
S. Trillo ◽  
S. Wabnitz ◽  
N. Finlayson ◽  
W. C. Banyai ◽  
C. T. Seaton ◽  
...  

1995 ◽  
Vol 67 (15) ◽  
pp. 2114-2116
Author(s):  
Ming‐Shan Lin ◽  
Ding‐Wei Huang ◽  
C. C. Yang ◽  
Minghwei Hong ◽  
Young‐Kai Chen

2007 ◽  
Author(s):  
Mu Cheng ◽  
Chongqing Wu ◽  
Shuang Zhao ◽  
Zhengyong Li ◽  
Xinzhi Sheng

Laser Physics ◽  
2011 ◽  
Vol 21 (11) ◽  
pp. 1903-1908 ◽  
Author(s):  
D. Mao ◽  
X. M. Liu ◽  
H. Lu ◽  
L. R. Wang ◽  
L. N. Duan

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