Bistability experimentally observed at three milliwatts in indium arsenide and theoretically predicted for a new class of nonlinear dielectrics

1984 ◽  
Vol 313 (1525) ◽  
pp. 257-264 ◽  
Keyword(s):  
Band Gap ◽  
Indium Arsenide ◽  
Separate Study ◽  
Nonlinear Polarization ◽  
New Class ◽  
Gap Resonance ◽  
Specific Calculations ◽  
Hf Laser ◽  
Nonlinear Constitutive Relation ◽  
Effect Of Light

The results of an experimental investigation ol nonlinearities and bistability at the band gap in InAs are presented. Bistability was observed in reflection at 3 mW with a HF laser by using the large nonlinearity at the band-gap resonance in InAs. The measured nonlinear refractive index is shown quantitatively to agree with the dynamic Burstein—Moss shift as the mechanism, as long as both the full Fermi-Dirac statistics and the effect of light holes are included in the calculation. In a separate study a theoretical analysis has investigated general conditions for intrinsic bistability without cavities. It is shown that bistability can result from a nonlinear constitutive relation. Specific calculations are presented for bistability due to nonlinear polarization.

Nonlinear polarization switching near half the band gap in semiconductors

1993 ◽  
Vol 18 (18) ◽  
pp. 1487 ◽  
Author(s):  
C. C. Yang ◽  
Alain Villeneuve ◽  
Cheng-Hui Lin ◽  
Hao-Hsiung Lin ◽  
George I. Stegeman ◽  
...  
Keyword(s):  
Band Gap ◽  
Polarization Switching ◽  
Nonlinear Polarization

scholarly journals Copper halide diselenium: predicted two-dimensional materials with ultrahigh anisotropic carrier mobilities

RSC Advances ◽  
2020 ◽  
Vol 10 (14) ◽  
pp. 8016-8026 ◽  
Author(s):  
Fazel Shojaei ◽  
Maryam Azizi ◽  
Zabiollah Mahdavifar ◽  
Busheng Wang ◽  
Gilles Frapper
Keyword(s):  
Band Gap ◽  
First Principles ◽  
Two Dimensional ◽  
Copper Halide ◽  
New Class ◽  
Two Dimensional Materials ◽  
Bonding Properties ◽  
High Carrier ◽  
Indirect Band Gap ◽  
Very High

The physical and bonding properties of a new class of two-dimensional materials – CuXSe2 (X = Cl, Br) – are investigated using first-principles methods. 2D CuXSe2 are indirect band gap and possess extremely anisotropic and very high carrier mobilities.

Highly Conductive, Regioregular Alkoxy-Functionalized Polythiophenes:  A New Class of Stable, Low Band Gap Materials

2005 ◽  
Vol 17 (13) ◽  
pp. 3317-3319 ◽  
Author(s):  
Elena E. Sheina ◽  
Sonya M. Khersonsky ◽  
Edward G. Jones ◽  
Richard D. McCullough
Keyword(s):  
Band Gap ◽  
Low Band Gap ◽  
New Class

scholarly journals Band gap opening and semiconductor–metal phase transition in (n, n) single-walled carbon nanotubes with distinctive boron–nitrogen line defect

2016 ◽  
Vol 18 (6) ◽  
pp. 4643-4651 ◽  
Author(s):  
Ming Qiu ◽  
Yuanyuan Xie ◽  
Xianfeng Gao ◽  
Jianyang Li ◽  
Yelin Deng ◽  
...  
Keyword(s):  
Phase Transition ◽  
Carbon Nanotubes ◽  
Band Gap ◽  
Single Walled Carbon Nanotubes ◽  
Line Defect ◽  
New Class ◽  
Gap Opening ◽  
Metal Phase Transition ◽  
Walled Carbon Nanotubes ◽  
Boron Nitrogen

A new class of semiconducting armchair SWCNTs with a distinctive BN line defect are investigated for the band gap opening, continuous mechanical and electrical modulating.

A new class of small band gap organic polymer conductors

1992 ◽  
Vol 29 (1-2) ◽  
pp. 119-126 ◽  
Author(s):  
E. E. Havinga ◽  
W. ten Hoeve ◽  
H. Wynberg
Keyword(s):  
Band Gap ◽  
Organic Polymer ◽  
New Class ◽  
Small Band

scholarly journals Proton Migration on the Boron Sheets Surface

2021 ◽  
pp. 19-28
Author(s):  
Evgeniya Boroznina ◽  
◽  
Konstantin Smirnov ◽  
Vladimir Akatiev ◽  
Marina Kudinova ◽  
...  
Keyword(s):  
Band Gap ◽  
Two Dimensional ◽  
Electronic Density ◽  
New Class ◽  
Single Proton ◽  
Mechanical And Electrical Properties ◽  
Type Layer ◽  
Boron Sheets ◽  
Proton Migration ◽  
Boron Nanostructures

Borophene is a two-dimensional allotrope of boron and it is also known as boron sheet. First it has been predicted theoretically in the mid-1990s, experimentally borophene was confirmed in 2015 when the structure was successfully synthesized in 2015. One of the key features of borophene is its strong anisotropy – the dependence of mechanical and electrical properties on direction. This phenomenon is not typical for 2D materials and has never been observed in 2D metals before. Borophene has the highest tensile strength of all known two-dimensional materials. In early works, it was found that the adsorption of a hydrogen atom on the surface of borophene is possible and the analyses of electronic density showed that atom H became a proton. Therefore, in this work, the authors have studied the proton migration over the surface of boron sheets of two types and have found the most energetically favorable path of proton motion. The electron-energy characteristics of the process of migration of a single proton along the surface of boron layers of two types are determined and it is established that in all the considered cases the proton is able to move along the surface almost barrier-free. The type of conductivity of pure boron layers and layers modified by a single proton is determined. In the A-type boron layer, the proton increases the band gap by 0.04 eV, and in the B-type layer, the band gap changes by 0.05 eV. It is proved that two-dimensional boron nanostructures can be considered as a new class of boron topological structure with proton conductivity.

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