Metallo-dielectric metasurfaces for thermal emission with controlled spectral bandwidth and angular aperture

With the advent of crystal growth techniques which enable device structure control at the atomic level has arrived a need to determine the crystal structure at a commensurate scale. In particular, in epitaxial lattice mismatched multilayers, it is of prime importance to know the lattice parameter, and hence strain, in individual layers in order to explain the novel electronic behavior of such structures. In this work higher order Laue zone (holz) lines in the convergent beam microdiffraction patterns from a thermal emission transmission electron microscope (TEM) have been used to measure lattice parameters to an accuracy of a few parts in a thousand from nanometer areas of material.Although the use of CBM to measure strain using a dedicated field emission scanning transmission electron microscope has already been demonstrated, the recording of the diffraction pattern at the required resolution involves specialized instrumentation. In this work, a Topcon 002B TEM with a thermal emission source with condenser-objective (CO) electron optics is used.

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Thermal Emission and Curing Efficiency of LED and Halogen Curing Lights

Yearbook of Dentistry ◽

10.1016/s0084-3717(08)70037-0 ◽

2006 ◽

Vol 2006 ◽

pp. 39-40 ◽

Cited By ~ 1

Author(s):

P.C. Belvedere

Keyword(s):

Thermal Emission

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1.0^|^mu;m High-power and Broad Spectral Bandwidth Superluminescent Diodes

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.133.1437 ◽

2013 ◽

Vol 133 (8) ◽

pp. 1437-1442

Author(s):

Tsuyoshi Ohgoh ◽

Atsushi Mukai ◽

Junya Yaguchi ◽

Hideki Asano

Keyword(s):

High Power ◽

Spectral Bandwidth ◽

Superluminescent Diodes

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Application of Backside Photo and Thermal Emission Microscopy Techniques to Advanced Memory Devices

ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa1997p0063 ◽

1997 ◽

Author(s):

S.-S. Lee ◽

J.-S. Seo ◽

N.-S. Cho ◽

S. Daniel

Keyword(s):

Thermal Emission ◽

Test Cases ◽

Memory Devices ◽

Front Side ◽

Emission Analysis ◽

Intensity Attenuation ◽

Analysis Techniques ◽

Defect Sites ◽

Emission Microscopy ◽

Microscopy Techniques

Abstract Both photo- and thermal emission analysis techniques are used from the backside of the die colocate defect sites. The technique is important in that process and package technologies have made front-side analysis difficult or impossible. Several test cases are documented. Intensity attenuation through the bulk of the silicon does not compromise the usefulness of the technique in most cases.

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