Depth profile of the nonlinear susceptibility of LiNbO_3 ridge waveguides fabricated by ion implantation and dicing

AbstractSilicon with buried oxides formed by ion implantation (SIMOX) or zone-melt recrystallization (ZMR) was exposed to deuterium gas at temperatures from 773 K to 1273 K, and the depth profile of the D was then determined by nuclear-reaction analysis. The D was localized within the buried oxide, with no measurable quantity in the Si phase. Uptake was controlled by permeation through the Si overlayer, and the permeability of D in Si was determined at 873 K. The sample dependence of D uptake indicated substantially fewer defect-trap sites in SIMOX oxide annealed at 1678 K as opposed to 1548 K, with still smaller defect densities in the ZMR oxide. Hydrogen exposure at 1273 K substantially disrupted the SIMOX structures.

Download Full-text

Hardness depth profile of lattice strained cemented carbide modified by high-energy boron ion implantation

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(91)95742-v ◽

1991 ◽

Vol 59-60 ◽

pp. 962-965 ◽

Cited By ~ 4

Author(s):

Y. Yoshida ◽

A. Matsumura ◽

K. Higeta ◽

T. Inoue ◽

S. Shimizu ◽

...

Keyword(s):

Ion Implantation ◽

Depth Profile ◽

High Energy ◽

Cemented Carbide ◽

Hardness Depth

Download Full-text

Ridge Waveguides and Y-Branch Beam Splitters in KTiOAsO4 Crystal by 15 MeV Oxygen Ion Implantation and Femtosecond Laser Ablation

Journal of Lightwave Technology ◽

10.1109/jlt.2016.2636998 ◽

2017 ◽

Vol 35 (2) ◽

pp. 225-229 ◽

Cited By ~ 10

Author(s):

Chen Chen ◽

Shavkat Akhmadaliev ◽

Carolina Romero ◽

Javier R. Vazquez de Aldana ◽

Shengqiang Zhou ◽

...

Keyword(s):

Laser Ablation ◽

Femtosecond Laser ◽

Ion Implantation ◽

Femtosecond Laser Ablation ◽

Beam Splitters ◽

Oxygen Ion ◽

Ridge Waveguides ◽

Oxygen Ion Implantation

Download Full-text

Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation

Journal of Applied Physics ◽

10.1063/1.2756622 ◽

2007 ◽

Vol 102 (2) ◽

pp. 024309 ◽

Cited By ~ 7

Author(s):

S. Yerci ◽

I Yildiz ◽

M. Kulakci ◽

U. Serincan ◽

M. Barozzi ◽

...

Keyword(s):

Ion Implantation ◽

Depth Profile ◽

Silicon Nanocrystals

Download Full-text

1011 Depth profile for DLC films deposited by plasma ion implantation with CH_4

The Proceedings of Ibaraki District Conference ◽

10.1299/jsmeibaraki.2007.253 ◽

2007 ◽

Vol 2007 (0) ◽

pp. 253-254

Author(s):

Atsushi MITSUO ◽

Masahiro KAWAGUCHI ◽

Kazuo MORIKAWA ◽

Saiko AOKI ◽

Hideto SUZUKI

Keyword(s):

Ion Implantation ◽

Depth Profile

Download Full-text

Applied-Information Technology in Concentration Depth Profile of Multi-Charged Mo Ion Implantation

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.662.115 ◽

2014 ◽

Vol 662 ◽

pp. 115-118

Author(s):

Jian Hua Yang ◽

Xing Jian Ma

Keyword(s):

Monte Carlo ◽

Ion Implantation ◽

Depth Profile ◽

High Dose ◽

H13 Steel ◽

Depth Profiles ◽

Concentration Depth Profile ◽

Charged Ions ◽

Concentration Depth Profiles ◽

Better Than

Monte Carlo computer simulations based on the binary collision approximation, TRIDYN program, have been applied to calculate the concentration depth profiles of implanted multi-charged molybdenum ions in H13 steel. The sputtering effect of a high dose ion implantation and influence of multi-charged ions on the concentration depth profile of implanted molybdenum ions can both be considered in the TRIDYN simulation. For the Monte Carlo computer simulation, the chosen pseudo-projectiles are 500000. The chosen extraction voltages are 48kV and 25kV, respectively, and an implantation doses of 5×1017cm-2 to compare the results which have been published related to molybdenum ion implantation. TRIDYN program is better than SRIM program in the calculation of the concentration depth profiles of implanted multi-charged ions. And the calculation result of the TRIDYN program is different from the experiment result. The other factors of affecting the concentration depth profile have also been discussed finally.

Download Full-text