Depth profile studies of extended defects induced by ion implantation in Si and Al

1980 ◽  
Vol 49 (1-3) ◽  
pp. 75-79 ◽  
Author(s):  
S. T. Picraux ◽  
D. M. Follstaedt ◽  
P. Baeri ◽  
S. U. Campisano ◽  
G. Foti ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Depth Profile ◽  
Extended Defects

Interaction of Deuterium with Buried Oxides in Silicon

1987 ◽  
Vol 107 ◽  
Author(s):  
S. M. Myers
Keyword(s):  
Ion Implantation ◽  
Nuclear Reaction ◽  
Depth Profile ◽  
Nuclear Reaction Analysis ◽  
Measurable Quantity ◽  
Buried Oxide ◽  
Hydrogen Exposure ◽  
Deuterium Gas ◽  
Defect Densities ◽  
Zone Melt

AbstractSilicon with buried oxides formed by ion implantation (SIMOX) or zone-melt recrystallization (ZMR) was exposed to deuterium gas at temperatures from 773 K to 1273 K, and the depth profile of the D was then determined by nuclear-reaction analysis. The D was localized within the buried oxide, with no measurable quantity in the Si phase. Uptake was controlled by permeation through the Si overlayer, and the permeability of D in Si was determined at 873 K. The sample dependence of D uptake indicated substantially fewer defect-trap sites in SIMOX oxide annealed at 1678 K as opposed to 1548 K, with still smaller defect densities in the ZMR oxide. Hydrogen exposure at 1273 K substantially disrupted the SIMOX structures.

Boron segregation to extended defects induced by self-ion implantation into silicon

1999 ◽  
Vol 85 (11) ◽  
pp. 7597-7603 ◽  
Author(s):  
Jianxin Xia ◽  
Tomoya Saito ◽  
Ryangsu Kim ◽  
Takenori Aoki ◽  
Yoshinari Kamakura ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Extended Defects ◽  
Boron Segregation

Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing

2009 ◽  
Vol 615-617 ◽  
pp. 477-480 ◽  
Author(s):  
Masahiro Nagano ◽  
Hidekazu Tsuchida ◽  
Takuma Suzuki ◽  
Tetsuo Hatakeyama ◽  
Junji Senzaki ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Basal Plane ◽  
Defect Formation ◽  
Stacking Faults ◽  
Annealing Process ◽  
Extended Defects ◽  
X Ray ◽  
Substrate Interface ◽  
Aluminum Ions ◽  
Activation Annealing

Defect formation during the ion implantation/annealing process in 4H-SiC epilayers is investigated by synchrotron reflection X-ray topography. The 4H-SiC epilayers are subjected to an activation annealing process after Aluminum ions being implanted in the epilayers. The formation modes of extended defects induced by the implantation/annealing process are classified into the migration of preexisting dislocations and the generation of new dislocations/stacking faults. The migration of preexisting basal plane dislocations (BPDs) takes place corresponding to the ion implantation interface or the epilayer/substrate interface. The generation of new dislocations/stacking faults is confirmed as the formation of Shockley faults near the surface of the epilayer and BPD half-loops in the epilayer.

Electrical and Structural Properties of MeV Si+ Ion Implantation in Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
Aditya Agarwal ◽  
S. Koveshnikov ◽  
K. Christensen ◽  
G. A. Rozgonyi
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Structural Defects ◽  
Extended Defects ◽  
Device Layer ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Si Ion Implantation

AbstractThe electrical properties of residual MeV ion implantation damage in Si after annealing from 600 to 1100°C for 1 hour have been investigated using Deep Level Transient Spectroscopy, Capaciatance-Voltage, and Current-Voltage measurements. These data have been correlated with structural defects imaged by Transmission Electron Microscopy. It is shown that at least 4 deep levels are associated with the buried layer of extended defects after annealing at 800, 900, 1000 and 1100°C. Additionally, for the wafer annealed at 800°C at least 5 more deep level centers are present in the device layer above the buried defects.

Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation

2007 ◽  
Vol 102 (2) ◽  
pp. 024309 ◽  
Author(s):  
S. Yerci ◽  
I Yildiz ◽  
M. Kulakci ◽  
U. Serincan ◽  
M. Barozzi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Depth Profile ◽  
Silicon Nanocrystals

scholarly journals 1011 Depth profile for DLC films deposited by plasma ion implantation with CH_4

2007 ◽  
Vol 2007 (0) ◽  
pp. 253-254
Author(s):  
Atsushi MITSUO ◽  
Masahiro KAWAGUCHI ◽  
Kazuo MORIKAWA ◽  
Saiko AOKI ◽  
Hideto SUZUKI
Keyword(s):  
Ion Implantation ◽  
Depth Profile

Applied-Information Technology in Concentration Depth Profile of Multi-Charged Mo Ion Implantation

2014 ◽  
Vol 662 ◽  
pp. 115-118
Author(s):  
Jian Hua Yang ◽  
Xing Jian Ma
Keyword(s):  
Monte Carlo ◽  
Ion Implantation ◽  
Depth Profile ◽  
High Dose ◽  
H13 Steel ◽  
Depth Profiles ◽  
Concentration Depth Profile ◽  
Charged Ions ◽  
Concentration Depth Profiles ◽  
Better Than

Monte Carlo computer simulations based on the binary collision approximation, TRIDYN program, have been applied to calculate the concentration depth profiles of implanted multi-charged molybdenum ions in H13 steel. The sputtering effect of a high dose ion implantation and influence of multi-charged ions on the concentration depth profile of implanted molybdenum ions can both be considered in the TRIDYN simulation. For the Monte Carlo computer simulation, the chosen pseudo-projectiles are 500000. The chosen extraction voltages are 48kV and 25kV, respectively, and an implantation doses of 5×1017cm-2 to compare the results which have been published related to molybdenum ion implantation. TRIDYN program is better than SRIM program in the calculation of the concentration depth profiles of implanted multi-charged ions. And the calculation result of the TRIDYN program is different from the experiment result. The other factors of affecting the concentration depth profile have also been discussed finally.

Phosphorus / Silicon Interstitial Annealing After Ion Implantation

2000 ◽  
Vol 610 ◽  
Author(s):  
P. H. Keys ◽  
R. Brindos ◽  
V. Krishnamoorthy ◽  
M. Puga-Lambers ◽  
K. S. Jones ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Extended Defects ◽  
Enhanced Diffusion ◽  
Transmission Electron ◽  
Initial Nucleation ◽  
Primary Damage ◽  
Dopant Atoms ◽  
Phosphorus Doped ◽  
Secondary Ion

AbstractThe release of interstitials from extended defects after ion implantation acts as a driving force behind transient enhanced diffusion (TED). Implantation of Si+ ions into regions of phosphorus-doped silicon provides experimental insight into the interaction of silicon interstitials and dopant atoms during primary damage annealing. The presence of phosphorus influences the morphology of secondary defects during initial nucleation. Transmission electron microscopy (TEM) is used to differentiate between defect types and quantify the interstitials trapped in extended defects. This analysis reveals that phosphorus results in a reduction of interstitials trapped in observable extended defects. The interstitial flux released from the implanted region is also affected by the phosphorus doping. This phenomenon is closely studied using secondary ion mass spectrometry (SIMS) to monitor diffusion enhancements of dopant layers. Shifts in diffused dopant profiles are correlated with the different morphologies of the extended defects and the decay of the silicon interstitial supersaturation. This correlation is used to understand the interaction of excess silicon interstitials with phosphorus atoms.

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