Applied-Information Technology in Concentration Depth Profile of Multi-Charged Mo Ion Implantation

2014 ◽  
Vol 662 ◽  
pp. 115-118
Author(s):  
Jian Hua Yang ◽  
Xing Jian Ma
Keyword(s):  
Monte Carlo ◽  
Ion Implantation ◽  
Depth Profile ◽  
High Dose ◽  
H13 Steel ◽  
Depth Profiles ◽  
Concentration Depth Profile ◽  
Charged Ions ◽  
Concentration Depth Profiles ◽  
Better Than

Monte Carlo computer simulations based on the binary collision approximation, TRIDYN program, have been applied to calculate the concentration depth profiles of implanted multi-charged molybdenum ions in H13 steel. The sputtering effect of a high dose ion implantation and influence of multi-charged ions on the concentration depth profile of implanted molybdenum ions can both be considered in the TRIDYN simulation. For the Monte Carlo computer simulation, the chosen pseudo-projectiles are 500000. The chosen extraction voltages are 48kV and 25kV, respectively, and an implantation doses of 5×1017cm-2 to compare the results which have been published related to molybdenum ion implantation. TRIDYN program is better than SRIM program in the calculation of the concentration depth profiles of implanted multi-charged ions. And the calculation result of the TRIDYN program is different from the experiment result. The other factors of affecting the concentration depth profile have also been discussed finally.

The Factors Affecting the Surface Properties of W-Implanted H13 Steel

2014 ◽  
Vol 662 ◽  
pp. 75-78
Author(s):  
Jian Hua Yang ◽  
Song Li ◽  
Xing Jian Ma
Keyword(s):  
Ion Implantation ◽  
Surface Properties ◽  
H13 Steel ◽  
Factors Affecting ◽  
Enhanced Diffusion ◽  
Radiation Enhanced Diffusion ◽  
Concentration Depth Profile ◽  
Collision Approximation ◽  
Concentration Depth Profiles ◽  
Main Factor

The surface properties of W-implanted H13 steel are investigated using pulse multi-charged ion implantation. Computer simulations based on the binary collision approximation, TRIDYN, have been applied to calculate the concentration depth profiles of implanted tungsten ions in H13 steel. The calculated result by TRIDYN program is compared with that from experimental results. The factors affecting the surface properties of W-implanted H13 steel have been discussed. The radiation enhanced diffusion induced by spike is the main factor affecting the concentration depth profile. Compared with single energy ion implantation, the multi-charged ion implantation will make the concentration gradient become small, which is conducive to the formation of a kind of relatively uniform surface structure, and further improve the wear resistance of H13 steel.

MONTE CARLO SIMULATION OF THE SURFACE SEGREGATION OF Au75Pd25 AT (110) SURFACE USING AN ANALYTIC EMBEDDED ATOM METHOD

2007 ◽  
Vol 14 (03) ◽  
pp. 411-417 ◽  
Author(s):  
YU CHEN ◽  
SHUZHI LIAO
Keyword(s):  
Experimental Data ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Surface Segregation ◽  
Embedded Atom Method ◽  
Depth Profiles ◽  
The Third ◽  
Embedded Atom ◽  
Reconstructed Surface ◽  
Concentration Depth Profiles

The surface concentrations and concentration depth profiles to the (110) surface of an Au 75 Pd 25 alloy is studied by modified analytical embedded atom method (MAEAM) with the Monte Carlo simulations. The results indicate that Au enriched in the two topmost layers, but depleted in the third layer. The Au concentration in the non-reconstructed surface is less than that in the reconstructed surface. Au concentration in third layer of reconstructed surface, which is more agreement with experimental data in present simulations, is about 63% 61% and 55%, at 800K, 600K and 400K respectively. Thus the present simulations are helpful for a better understanding of surface segregation of AuPd alloys.

Carrier Profile Variation of a Channel Conductive Layer Through Phospho-Silicate-Glass Cap Annealing of N+ Si-Implanted GaAs Crystals

1992 ◽  
Vol 262 ◽  
Author(s):  
Yasuyuki Saito
Keyword(s):  
Silicate Glass ◽  
Depth Profile ◽  
Scattering Amplitude ◽  
High Dose ◽  
Amplitude Variation ◽  
Active Layers ◽  
Profile Variation ◽  
Concentration Depth Profile ◽  
Before And After ◽  
Lec Gaas

ABSTRACTThis paper reports the variation of carrier concentration depth profile in Si-implanted channel conductive layers of liquid- encapsulated-Czochralski- technique (LEC) grown GaAs crystals, the Vth scattering amplitude variation and the averaged Vth variation before and after phospho-silicate-glass (PSG) cap annealing of high-dose-Si-ion implanted crystal layers. Furthermore, the PSG-cap-annealing Vth variation difference between the As-rich LEC crystal and the near-stoichiometric LEC crystal is presented. These results, and carrier depth profile of Si-implanted active layers in LEC GaAs crystals through model of implanted Si atom move (like diffusion) and Si atom capture of a crystal lattice and siteing on lattice are discussed.

Ion Implantation of Ti,Mo W,Mo+C and W+C in H13 Steel and Aluminum at Elevated Temperature

1993 ◽  
Vol 316 ◽  
Author(s):  
Zhang Tonghe ◽  
Wei Fuzhong ◽  
Chen Jun ◽  
Zhang huixing ◽  
Zhang Xioji ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Peak Concentration ◽  
Chemical Change ◽  
High Dose ◽  
Second Phase ◽  
Target Temperature ◽  
X Ray Diffraction ◽  
H13 Steel ◽  
X Ray ◽  
Second Phases

ABSTRACTThe chemical change in the surface of H13 steel or aluminum is produced by implanting a reactive elements, such as Ti, Mo and W. The X-ray diffraction pattern shows that implanted Ti at 400 C has reacted with carbon(0.35 in wt.%) forming a second phase TiC. Auger analysis shows that the carbon atoms have been condensed in the Ti implanted region. Carbon peak concentration of 30 At.% is greater than Ti atom peak concentration of 12 At.%.Several second phases are formed during pulsed Mo ion implantation 2 into aluminum with high ion flux of 50˜80µA/cm2 which raises the target temperature from 400°C to 600°C.More second phases are formed by dual Mo+C implantation with high dose of 3˜5×10 17/cm2 and high flux of 50˜75µA/cm2 . And the target temperature is raised from 400 to 600°C. The FeMo Fe3Mo2, Fe2MoC, Mo2C, MoC, MoCx, phases and iron carbides are identified by X-ray diffraction technique.

CHARACTERIZATION OF SURFACE COMPOSITION AND MICROSTRUCTURE OF H13 STEEL IMPLANTED BY Ti IONS USING MASKING IMPLANTATION PROCEDURE

2008 ◽  
Vol 15 (04) ◽  
pp. 481-485
Author(s):  
J. H. YANG ◽  
S. LI ◽  
M. F. CHENG ◽  
X. D. LUO
Keyword(s):  
Depth Profile ◽  
Surface Composition ◽  
Grazing Angle ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
H13 Steel ◽  
Transmission Electron ◽  
Concentration Depth Profile ◽  
Pin On Disc

Ti and C ions extracted from a metal vapor vacuum arc ion source (MEVVA) were implanted into H13 steel using a masking procedure to ensure reproducible conditions for testing and subsequent analysis. An optical interference microscope and pin-on-disc apparatus investigated the wear and friction characteristics of the steel. The Ti concentration depth profile from Rutherford backscattering spectroscopy was compared with that calculated by a TRIDYN code. It was observed by grazing-angle X-ray diffraction and transmission electron microscopy that carbide of Ti appeared in the doped region. The concentration depth profile and microstructure analysis can serve to illuminate the wear resistance improvement mechanisms of the Ti -implanted steel.

X-ray diffraction study of concentration depth profiles of binary alloy coatings during thermal diffusion: application to brass coating

1999 ◽  
Vol 32 (1) ◽  
pp. 27-35 ◽  
Author(s):  
B. Bolle ◽  
A. Tidu ◽  
J. J. Heizmann
Keyword(s):  
Thermal Diffusion ◽  
Profile Analysis ◽  
Nondestructive Method ◽  
Line Profile Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Depth Profiles ◽  
Diffraction Line Profile ◽  
Concentration Depth Profile ◽  
Concentration Depth Profiles

Using the Houska method based on X-ray diffraction-line profile analysis, new mathematical treatments are proposed to compute directly the concentration depth profile of thin films obtained by diffusion. As an example, concentration depth profiles of a brass layer have been studied during the thermal diffusion process. This nondestructive method is fast (a few minutes) and allows the sample to be used for complementary analysis if necessary.

Growth of ion implanted buried FeSi2 on Si (111) and Si (100)

1991 ◽  
Vol 235 ◽  
Author(s):  
K. Radermacher ◽  
S. Mantl ◽  
Ch. Dieker ◽  
H. Holzbrecher ◽  
W. Speier ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Mass Spectroscopy ◽  
Peak Concentration ◽  
Rutherford Backscattering Spectrometry ◽  
Dose Dependence ◽  
High Dose ◽  
Depth Profiles ◽  
Si Substrates ◽  
Ion Channeling ◽  
Secondary Ion

ABSTRACTBuried FeSi2 layers have been fabricated by 200 keV Fe+ implantations into (111) and (100) Si substrates. By varying the dose from 0.4 to 7.1017 Fe+ cm−2 the dependence of the Fe concentration on ion dose was investigated systematically. The samples were characterized by Rutherford backscattering spectrometry, He+ ion channeling and secondary ion mass spectroscopy. In the as-implanted state the Fe peak concentration increases lineary with dose up to ≈2.4.1017 Fe+ cm−2. Above this dose a redistribution of Fe atoms was observed as indicated by comparison of measured depth profiles with Monte-Carlo simulations of high dose implantations. The Fe peak concentration shows an unusual dose dependence after rapid thermal annealing (RTA) at 1150°C for 10 s. A minimum dose of (2.4±0.1)1017 Fe+ cm−2 for (111) Si and a slightly higher dose of (2.7±0.1).1017 Fe+ cm−2 for (100) Si is necessary to form continuous metallic αFeSi2 layers.

scholarly journals Laser ion implantation of Ge in SiO2 using a post-ion acceleration system

2016 ◽  
Vol 35 (1) ◽  
pp. 72-80 ◽  
Author(s):  
M. Cutroneo ◽  
A. Mackova ◽  
L. Torrisi ◽  
V. Lavrentiev
Keyword(s):  
Ion Implantation ◽  
Nuclear Physics ◽  
Physics Institute ◽  
Laser Repetition Rate ◽  
Depth Profiles ◽  
The University ◽  
Ion Species ◽  
Concentration Depth Profiles ◽  
Nuclear Physics Institute

AbstractThis work reports a comparative study of laser ion implantation mainly performed at the Nuclear Physics Institute in Rez (Czech Republic), National Institute of Nuclear Physics (Italy), and the Plasma Physics Laboratory at the University of Messina (Italy) using different approaches. Thick metallic targets were irradiated in vacuum by a focused laser beam to generate plasma-producing multi-energy and multi-species ions. A post-acceleration system was employed in order to increase the energy of the produced ions and to generate ion beams suitable to be implanted in different substrates. The ion dose was controlled by the laser repetition rate and the time of irradiation. Rutherford backscattering analysis was carried out to evaluate the integral amount of implanted ion species, the concentration–depth profiles, the ion penetration depth, and the uniformity of depth profiles for ions laser implanted into monocrystalline substrates. The laser implantation under normal conditions and in post-acceleration configuration will be discussed on the basis of the characterization of the implanted substrates.

scholarly journals Study of Concentration-depth Profiles of the Titanium and Nitrogen Ions by SRIM/TRIM Simulation

2021 ◽  
Vol 25 ◽  
Author(s):  
Andrea Carolina Pabón-Beltrán ◽  
Felipe Sanabria-Martínez ◽  
Custodio Vásquez-Quintero ◽  
José José Barba-Ortega ◽  
Ely Dannier Valbuena-Niño
Keyword(s):  
Ion Implantation ◽  
Arc Discharge ◽  
High Vacuum ◽  
Implantation Dose ◽  
Implantation Technique ◽  
Composition Analysis ◽  
Discharge Data ◽  
Depth Profiles ◽  
Nitrogen Ions ◽  
Concentration Depth Profiles

In this research, the concentration-depth profiles reached by titanium and nitrogen particles, on the surface of AISI/SAE 1020 carbon steel substrates, by using of ion implantation technique, are studied. The ions are surface deposited by means of high voltage pulsed discharges and electric arc discharge under high vacuum conditions. The concentration and position distribution of the metallic and non-metallic species are obtained by simulation of the interaction of ions with the matter, stopping and ranges of ions in the matter, by the computer program transport of ions in matter. The implantation dose is calculated from the discharge data and the previously established study parameters in this work. From the simulation results, the depth profiles demonstrated that titanium and nitrogen ions may reach up to 300 Å and 600 Å and concentrations of 1.478 x 1016 ions⁄cm2 and 2.127 x 1016 ions⁄cm2, respectively. The formation of titanium microdroplets upon the surface of the substrates is identified from the micrographs obtained by the scanning electron microscopy technique; furthermore, the presence of titanium and nitrogen implanted on the surface of the substrate is verified through the elemental composition analysis by the energy dispersive spectroscopy, validating the effect of ion implantation on ferrous alloys.

Sign in / Sign up

Export Citation Format

Share Document