Strong Exciton-Coherent Phonon Coupling in Single-Layer MoS2

2020 ◽  
Author(s):  
Chiara Trovatello ◽  
Henrique P. C. Miranda ◽  
Alejandro Molina-Sánchez ◽  
Rocío Borrego Varillas ◽  
Cristian Manzoni ◽  
...  
Keyword(s):  
Single Layer ◽  
Coherent Phonon ◽  
Phonon Coupling

Strong Exciton-Coherent Phonon Coupling In Single-Layer MoS2

2019 ◽  
Author(s):  
Chiara Trovatello ◽  
Henrique P. C. Miranda ◽  
Alejandro Molina-Sánchez ◽  
Rocío Borrego Varillas ◽  
Luca Moretti ◽  
...  
Keyword(s):  
Single Layer ◽  
Coherent Phonon ◽  
Phonon Coupling

Raman scattering and tunable electron–phonon coupling in single layer graphene

2007 ◽  
Vol 143 (1-2) ◽  
pp. 39-43 ◽  
Author(s):  
Jun Yan ◽  
Yuanbo Zhang ◽  
Sarah Goler ◽  
Philip Kim ◽  
Aron Pinczuk
Keyword(s):  
Raman Scattering ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Phonon Coupling ◽  
Layer Graphene ◽  
Electron Phonon Coupling

scholarly journals High temperature superconductivity at FeSe/LaFeO3 interface

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yuanhe Song ◽  
Zheng Chen ◽  
Qinghua Zhang ◽  
Haichao Xu ◽  
Xia Lou ◽  
...  
Keyword(s):  
High Temperature Superconductivity ◽  
Theoretical Calculations ◽  
Single Layer ◽  
General Mechanism ◽  
Phonon Coupling ◽  
Unique Case ◽  
Interfacial Engineering ◽  
Electron Phonon Coupling ◽  
Superconducting Pairing ◽  
Interfacial Charge

AbstractEnormous enhancement of superconducting pairing temperature (Tg) to 65 K in FeSe/SrTiO3 has made it a spotlight. Despite the effort of interfacial engineering, FeSe interfaced with TiOx remains the unique case in hosting high Tg, hindering a decisive understanding on the general mechanism and ways to further improving Tg. Here we constructed a new high-Tg interface, single-layer FeSe interfaced with FeOx-terminated LaFeO3. Large superconducting gap and diamagnetic response evidence that the superconducting pairing can emerge near 80 K, highest amongst all-known interfacial superconductors. Combining various techniques, we reveal interfacial charge transfer and strong interfacial electron-phonon coupling (EPC) in FeSe/LaFeO3, showing that the cooperative pairing mechanism works beyond FeSe-TiOx. Intriguingly, the stronger interfacial EPC than that in FeSe/SrTiO3 is likely induced by the stronger interfacial bonding in FeSe/LaFeO3, and can explain the higher Tg according to recent theoretical calculations, pointing out a workable route in designing new interfaces to achieve higher Tg.

scholarly journals Exciton–phonon coupling strength in single-layer MoSe2 at room temperature

2020 ◽  
Author(s):  
Donghai Li ◽  
Chiara Trovatello ◽  
Stefano Dal Conte ◽  
Matthias Nuß ◽  
Giancarlo Soavi ◽  
...  
Keyword(s):  
Room Temperature ◽  
Research Effort ◽  
Transition Metal Dichalcogenides ◽  
Optoelectronic Devices ◽  
Single Layer ◽  
Semiconductor Nanostructures ◽  
Phonon Coupling ◽  
Layer Transition ◽  
Fundamental Physics ◽  
Metal Dichalcogenides

Abstract Single-layer transition metal dichalcogenides (1L-TMDs) are at the center of an ever increasing research effort both in terms of fundamental physics and applications. Exciton–phonon coupling (EXPC) plays a key role in determining the photonic and (opto)electronic properties of 1L-TMDs. However, the EXPC strength has not been measured at room temperature. Here, we develop two-dimensional (2D) micro-spectroscopy to determine EXPC of 1L-MoSe2. We detect beating signals as a function of waiting time T, induced by the coupling between the A exciton and the A'1 optical phonon. Analysis of 2D beating maps provides the EXPC with the help of simulations. The Huang–Rhys factor of ~1 is larger than in most other inorganic semiconductor nanostructures. Our technique offers a unique tool to measure EXPC also in other 1L-TMDs and heterogeneous semiconducting systems with a spatial resolution ~260 nm, and will provide design-relevant parameters for the development of novel optoelectronic devices.

scholarly journals Coherent Phonon Coupling to Individual Bloch States in Photoexcited Bismuth

2012 ◽  
Vol 108 (25) ◽  
Author(s):  
E. Papalazarou ◽  
J. Faure ◽  
J. Mauchain ◽  
M. Marsi ◽  
A. Taleb-Ibrahimi ◽  
...  
Keyword(s):  
Coherent Phonon ◽  
Phonon Coupling

scholarly journals Injection locking in an optomechanical coherent phonon source

Nanophotonics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 1319-1327
Author(s):  
Guillermo Arregui ◽  
Martín F. Colombano ◽  
Jeremie Maire ◽  
Alessandro Pitanti ◽  
Néstor E. Capuj ◽  
...  
Keyword(s):  
Optical Cavity ◽  
Single Layer ◽  
High Amplitude ◽  
Temperature Limit ◽  
Coherent Phonon ◽  
Mechanical Oscillator ◽  
Detection Scheme ◽  
Optomechanical System ◽  
Arnold Tongue ◽  
External Reference

Abstract Spontaneous locking of the phase of a coherent phonon source to an external reference is demonstrated in a deeply sideband-unresolved optomechanical system. The high-amplitude mechanical oscillations are driven by the anharmonic modulation of the radiation pressure force that result from an absorption-mediated free-carrier/temperature limit cycle, i.e., self-pulsing. Synchronization is observed when the pump laser driving the mechanical oscillator to a self-sustained state is modulated by a radiofrequency tone. We employ a pump-probe phonon detection scheme based on an independent optical cavity to observe only the mechanical oscillator dynamics. The lock range of the oscillation frequency, i.e., the Arnold tongue, is experimentally determined over a range of external reference strengths, evidencing the possibility to tune the oscillator frequency for a range up to 350 kHz. The stability of the coherent phonon source is evaluated via its phase noise, with a maximum achieved suppression of 44 dBc/Hz at 1 kHz offset for a 100 MHz mechanical resonator. Introducing a weak modulation in the excitation laser reveals as a further knob to trigger, control and stabilize the dynamical solutions of self-pulsing based optomechanical oscillators, thus enhancing their potential as acoustic wave sources in a single-layer silicon platform.

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