scholarly journals Shaping of a three-dimensional carnivorous trap through modulation of a planar growth mechanism

PLoS Biology ◽  
2019 ◽  
Vol 17 (10) ◽  
pp. e3000427 ◽  
Author(s):  
Karen J. I. Lee ◽  
Claire Bushell ◽  
Yohei Koide ◽  
John A. Fozard ◽  
Chunlan Piao ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Three Dimensional ◽  
Planar Growth

scholarly journals Observing the three-dimensional terephthalic acid supramolecular growth mechanism on a stearic acid buffer layer by molecular simulation methods

RSC Advances ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 1319-1330
Author(s):  
Chia-Hao Su ◽  
Hui-Lung Chen ◽  
Shih-Jye Sun ◽  
Shin-Pon Ju ◽  
Tsu-Hsun Hou ◽  
...  
Keyword(s):  
Phase Separation ◽  
Stearic Acid ◽  
Buffer Layer ◽  
Molecular Simulation ◽  
Growth Mechanism ◽  
Terephthalic Acid ◽  
Three Dimensional ◽  
Layer By Layer ◽  
Simulation Methods ◽  
Growth Mechanisms

The terephthalic acid (TPA) supramolecular growth mechanisms on the stearic acid (STA) buffer layer, such as the phase separation and layer-by-layer (LBL) mechanisms, were considered by molecular simulations.

Initial Stages of GaAs Epitaxy on Si

1988 ◽  
Vol 116 ◽  
Author(s):  
O. K. Biegelsen ◽  
F. A. Ponce ◽  
B. S. Krusor ◽  
J. C. Tramontana ◽  
R. D. Yingling ◽  
...  
Keyword(s):  
Interfacial Reaction ◽  
Growth Mechanism ◽  
Three Dimensional ◽  
Nucleation And Growth ◽  
Heteroepitaxial Growth ◽  
Island Growth ◽  
Passivating Layer ◽  
Gaas On Si ◽  
Graded Thickness ◽  
Substrate Temperatures

AbstractThe initial stages of heteroepitaxial growth of GaAs on Si have been observed using a technique of graded-thickness sample deposition. We find that an initial uniform passivating layer is grown, followed by three-dimensional nucleation determined by Ga diffusion and clustering, followed in turn by an interfacial reaction limited island growth mechanism. Results for various substrate temperatures and substrate orientations are consistent with the simple models of nucleation and growth.

Tem Characterization of Highly Oriented Diamond Films on (001) Silicon Synthesized by Bias Enhanced Nucleation Technique

1996 ◽  
Vol 458 ◽  
Author(s):  
Seung-Joon Jeon ◽  
Arun Kumar Chawla ◽  
Young-Joon Baik ◽  
Changmo Sung
Keyword(s):  
Surface Morphology ◽  
Growth Mechanism ◽  
Silicon Substrate ◽  
Three Dimensional ◽  
Diamond Films ◽  
Nucleation And Growth ◽  
Texture Formation ◽  
Tem Characterization ◽  
Nucleation And Growth Mechanism

ABSTRACTHighly oriented diamond films were deposited on a (001) silicon substrate by bias enhanced MPCVD technique. Three-dimensional TEM characterizations were carried out to understand the nucleation and growth mechanism of diamond grains. The surface morphology, defects, and misorientations of diamond films were compared as a function of synthesizing temperatures and thickness of the films. From our experimental results the texture formation mechanism of diamond films is discussed.

Controllable hydrothermal synthesis, growth mechanism, and properties of ZnO three-dimensional structures

2010 ◽  
Vol 34 (4) ◽  
pp. 732 ◽  
Author(s):  
Yangang Sun ◽  
Junqing Hu ◽  
Na Wang ◽  
Rujia Zou ◽  
Jianghong Wu ◽  
...  
Keyword(s):  
Hydrothermal Synthesis ◽  
Growth Mechanism ◽  
Three Dimensional

Three-Dimensional Precursor-Derived Synthesis of Co3O4 Towards High Electrochemical Performance

2019 ◽  
Vol 11 (10) ◽  
pp. 1375-1386
Author(s):  
Ruili Zhang ◽  
Yuntao Yang ◽  
Ping Yang
Keyword(s):  
Hydrothermal Synthesis ◽  
Electrochemical Performance ◽  
Electrochemical Properties ◽  
Growth Mechanism ◽  
Three Dimensional ◽  
Solution Concentration ◽  
Cycling Performance ◽  
Electrochemical Investigation ◽  
Experimental Conditions ◽  
Different Shapes

Three-dimensional (3D) cobalt oxide (Co3O4) flowers with different shapes were prepared by a facile hydrothermal synthesis. The morphology of Co3O4 precursors has adjusted obviously from acicular shapes to acicular-sheet-like flowers and then to sheet-like flowers by changing reaction temperature and solution concentration. After annealing, as-prepared precursors were converted into 3D flower-like Co3O4 samples and their morphology and sizes were well preserved. The effect of experimental conditions on growth of Co3O4 precursors was explored and the growth mechanism was proposed. Moreover, the electrochemical properties of various Co3O4 with different shapes were tested. The result of electrochemical investigation indicates that 3D flower-like Co3O4 assembled by sheets exhibited high capacitance and excellent cycling performance.

Growth mechanism of InGaN nanodots on three-dimensional GaN structures

2017 ◽  
Vol 11 (7) ◽  
pp. 1700042 ◽  
Author(s):  
Donghwy Park ◽  
Daehong Min ◽  
Okhyun Nam
Keyword(s):  
Growth Mechanism ◽  
Three Dimensional
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