Enhanced Air Stability of Perovskite Quantum Dots by Manganese Passivation

Organic-inorganic perovskite quantum dots (PeQDs) have attracted attention due to their excellent optical properties, e.g., high photoluminescence quantum yields (PLQYs; >70%), a narrow full width at half maximum (FWHM; 25 nm or less), and color tunability adjusted by the halide components in an entire tunability (from 450 nm to 730 nm). On the other hand, PeQD stability against air, humidity, and thermal conditions has still not been enough, which disturbs their application. To overcome these issues, with just a focus on the air stability, Mn2+ ion passivated perovskite quantum dots (Mn/MAPbBr3 QDs) were prepared. Mn2+ could be expected to contract the passivating layer against the air condition because the Mn2+ ion was changed to the oxidized Mn on PeQDs under the air conditions. In this research, Mn/MAPbBr3 QDs were successfully prepared by ligand-assisted reprecipitation (LARP) methods. Surprisingly, Mn/MAPbBr3 QD films showed more than double PLQY stability over 4 months compared with pure MAPbBr3 ones against the air, which suggested that oxidized Mn worked as a passivating layer. Improving the PeQD stability is significantly critical for their application.

Structure and electrical resistance of the passivating ZnSe layer on Ge

In this article, we have considered the p-i-n Ge photodetector with ZnSe passivating layer. Passivation layer needs to be protected photodetector from dust, rain drops and other external influences. However, this passivation layer can cause errors in photodetector image. When creating a passivating ZnSe layer on Ge, which is used in p-i-n Ge photodetectors, we found two additional phases GeSe and GeSe2 that do not contradict with their state diagram. The above phases can have an essential effect on performances of the passivating layer. Therefore, to study the electrical resistance of this layer, we prepared model samples of layers containing the GeSe and GeSe2 with the thickness 0.5…1.8 µm and area 1 cm2. To measure the electrical resistance of these layers, we used elastic contacts. The performed measurements have shown that Se layers on Ge have an intermediate resistance between that of ZnSe on Ge and pure Ge, and, therefore, the effect of additional phases practically does not worsen the passivating properties of the ZnSe layer on Ge.

Structure and Electrical Resistance of the Passivating ZnSe Layer on Ge

When creating a passivating ZnSe layer on Ge, which is used in p-i-n Ge photodetector, we found two additional phases GeSe and GeSe2 that does not contradict with their state diagram. The above phases can have an essential effect on performances of the passivating layer. Therefore, to study the electrical resistance of this layer we prepared model samples of layers containing the GeSe and GeSe2 with the thickness 0.5…1.8 µm and area 1 cm2. To measure the electrical resistance of these layers, we used elastic contacts. The performed measurements have shown that Se layers on Ge have an intermediate resistance between that of ZnSe on Ge and pure Ge, and, therefore, the effect of additional phases practically does not worsen the passivating properties of the ZnSe layer on Ge.

Investigation of Ge p-i-n photodetector as a part of pulsed laser rangefinder prototype

The process of diffusion method for production of high-speed Ge p-i-n photodiodes for a laser rangefinder with a maximum photosensitivity at the wavelength 1.54 μm and a new passivating layer of ZnSe is described. Theoretical modeling of the rangefinder operation in real conditions was performed to determine the requirements for the sensitivity of the photodetector. The threshold sensitivity of the split photodetector as a part of the model of laser rangefinder was experimentally investigated. The correspondence between the calculated values and the sensitivity of the photodetector was ascertained, which allowed to draw the conclusion about the possibility of its application as a part of laser rangefinder.