SWIR Detection of Front Side Illumination InGaAs PhotoFETs on Si Substrate through Layer Transfer Technology

Carrier generation characteristics in n-type substrate SiC MOS capacitors induced by sub-bandgap energy light are reported. The generation rate is high enough to create an inversion layer in ~20 minutes with monochromatic light (front side illumination) of energy 2.1 eV in 4H-SiC for electric fields smaller than 1 MV/cm. Generation and recovery results strongly indicate involvement of a metastable defect whose efficiency as a generation center increases under hole-rich and decreases under electron-rich conditions. The generation dependence on bias history and light energy shows the defect to have properties consistent with the metastable silicon vacancy / carbon vacancy-antisite complex (VSi / Vc - CSi).

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ON/OFF Light Effect on the Buried Gate MESFET

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.268-270.143 ◽

2011 ◽

Vol 268-270 ◽

pp. 143-147

Author(s):

T. Jaya ◽

V. Kannan

Keyword(s):

Optical Fiber ◽

Continuity Equation ◽

Time Dependent ◽

Front Side ◽

Channel Conductance ◽

Light Effect ◽

Microwave Communication ◽

Insight Into ◽

Side Illumination ◽

Ion Implanted

An analytical model for the time dependent characteristic of ion implanted buried gate MESFET have been obtained by solving continuity equation with variation of light , turning ON and OFF in the active layer of buried gate through the optical fiber. This paper provides new insight into the cause of channel conductance variation in an ion implanted buried gate MESFET with front side illumination. At time‘t’ is equal to zero, the light through the optical fiber is turning ‘ON’ and ‘OFF’ has been considered. The channel conductance of the buried gate MESFET evaluated with front side illumination. These results indicate very good performance of the device compared with the other devices like MESFET with back and front illumination. Buried gate MESFET highly used in Aerospace System Technology and Microwave communication.

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CMOS Depth Image Sensor with Offset Pixel Aperture Using a Back-Side Illumination Structure for Improving Disparity

Sensors ◽

10.3390/s20185138 ◽

2020 ◽

Vol 20 (18) ◽

pp. 5138

Author(s):

Jimin Lee ◽

Sang-Hwan Kim ◽

Hyeunwoo Kwen ◽

Juneyoung Jang ◽

Seunghyuk Chang ◽

...

Keyword(s):

Image Sensor ◽

Image Sensors ◽

External Factors ◽

Depth Image ◽

Depth Information ◽

Back Side ◽

Pixel Size ◽

Front Side ◽

Single Image ◽

Side Illumination

This paper presents a CMOS depth image sensor with offset pixel aperture (OPA) using a back-side illumination structure to improve disparity. The OPA method is an efficient way to obtain depth information with a single image sensor without additional external factors. Two types of apertures (i.e., left-OPA (LOPA) and right-OPA (ROPA)) are applied to pixels. The depth information is obtained from the disparity caused by the phase difference between the LOPA and ROPA images. In a CMOS depth image sensor with OPA, disparity is important information. Improving disparity is an easy way of improving the performance of the CMOS depth image sensor with OPA. Disparity is affected by pixel height. Therefore, this paper compared two CMOS depth image sensors with OPA using front-side illumination (FSI) and back-side illumination (BSI) structures. As FSI and BSI chips are fabricated via different processes, two similar chips were used for measurement by calculating the ratio of the OPA offset to pixel size. Both chips were evaluated for chief ray angle (CRA) and disparity in the same measurement environment. Experimental results were then compared and analyzed for the two CMOS depth image sensors with OPA.

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