AIN thick films for power electronic device applications

1999 ◽  
Author(s):  
Yee Wai Leung
2016 ◽  
Vol 858 ◽  
pp. 11-14 ◽  
Author(s):  
Ian Manning ◽  
Jie Zhang ◽  
Bernd Thomas ◽  
Edward Sanchez ◽  
Darren Hansen ◽  
...  

Efforts to develop 150 mm 4H SiC bare wafer and epitaxial substrates for power electronic device applications have resulted in quality improvements, such that key metrics match or outperform 100 mm substrates. Total dislocation densities and threading screw dislocation densities measured for 150 mm wafers were ~4100 cm-2 and ~100 cm-2, respectively, compared with values of ~5900 cm-2 and ~300 cm-2 measured for 100 mm wafers. While median basal plane dislocation counts in 150 mm samples exceed those of the smaller platform, a nearly 45% reduction was realized, resulting in a median density of ~3900 cm-2. Epilayers grown on 150 mm substrates likewise exhibit quality metrics that are comparable to 100 mm samples, with median thickness and doping sigma/mean values of 1.1% and 4.4%, respectively.


2006 ◽  
Vol 45 (4B) ◽  
pp. 3387-3390 ◽  
Author(s):  
Atsushi Nishikawa ◽  
Kazuhide Kumakura ◽  
Tetsuya Akasaka ◽  
Toshiki Makimoto

2003 ◽  
Vol 102 (1-3) ◽  
pp. 298-303 ◽  
Author(s):  
L. Scaltrito ◽  
S. Porro ◽  
M. Cocuzza ◽  
F. Giorgis ◽  
C.F. Pirri ◽  
...  

2002 ◽  
Vol 14 (48) ◽  
pp. 13397-13402 ◽  
Author(s):  
S Ferrero ◽  
S Porro ◽  
F Giorgis ◽  
C F Pirri ◽  
P Mandracci ◽  
...  

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Matthew J. Gilbert

AbstractWithin the broad and deep field of topological materials, there are an ever-increasing number of materials that harbor topological phases. While condensed matter physics continues to probe the exotic physical properties resulting from the existence of topological phases in new materials, there exists a suite of “well-known” topological materials in which the physical properties are well-characterized, such as Bi2Se3 and Bi2Te3. In this context, it is then appropriate to ask if the unique properties of well-explored topological materials may have a role to play in applications that form the basis of a new paradigm in information processing devices and architectures. To accomplish such a transition from physical novelty to application based material, the potential of topological materials must be disseminated beyond the reach of condensed matter to engender interest in diverse areas such as: electrical engineering, materials science, and applied physics. Accordingly, in this review, we assess the state of current electronic device applications and contemplate the future prospects of topological materials from an applied perspective. More specifically, we will review the application of topological materials to the general areas of electronic and magnetic device technologies with the goal of elucidating the potential utility of well-characterized topological materials in future information processing applications.


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