Small-Signal Analysis Method of Noise Transfer of All-Optical Wavelength Converters

2003 ◽  
Vol 24 (2) ◽  
Author(s):  
Wu Shibao ◽  
Sun Xiaohan ◽  
Zhang Mingde
Energies ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4806
Author(s):  
Jia Yao ◽  
Kewei Li ◽  
Kaisheng Zheng ◽  
Alexander Abramovitz

Switched inductor (SI) converters are popular in applications requiring a steeper conversion ratio. However, these converters operate a twin inductor switching cell, which complicates the small-signal modeling. This paper proposes an expeditious small-signal analysis method to model the SI converters. The offered modeling approach is hinged on the analogy existing between the SI converters and certain Tapped Inductor (TI) converters. It is suggested here that by virtue of the analogy of the SI converters and TI converters the small-signal model of the SI converter is identical to that of its ideal TI counterpart. Hence, the recently developed Tapped Inductor Switcher (TIS) methodology can be applied to the modeling of the SI converters as well. As an example, the small-signal model of the Switched Inductor Buck converter is obtained. Theoretical analysis was confirmed by simulation and experimental results. In addition, several other SI converters and their TI counterparts are identified.


2013 ◽  
Vol 27 (21) ◽  
pp. 1350105 ◽  
Author(s):  
C. WANG ◽  
J. C. CAO

We theoretically study the static and dynamic transport properties of Mott–Gurney diodes based on semiconducting single-walled zigzag carbon nanotubes (CNTs). The electric field and velocity distribution of the diode under dc voltage is obtained by solving the steady-state drift-diffusion equations, which involve the negative differential velocity. The current–voltage characteristic of CNT diode exhibits a distinctive positive differential resistance. The high-frequency impedance is calculated with the small-signal analysis method. A major feature of the proposed CNT diode is that the bias- and tube index-dependent impedance show several negative windows in terahertz frequency range despite the positivity of the dc differential resistance. This property makes the CNT-based Mott–Gurney diode a promising candidate for the generation and amplification of terahertz signals within the desired frequency region.


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