Analysis and Experimented on Frequency Response Characteristics of RSOA based on Small Signal Analysis Method

Author(s):  
Yueying Zhan ◽  
Min Zhang ◽  
Junyun Zhan ◽  
Lei Liu ◽  
Mintao Liu ◽  
...  
2002 ◽  
Vol 12 (02) ◽  
pp. 551-562 ◽  
Author(s):  
I. D. MAYERGOYZ ◽  
P. ANDREI

A new approach to the analysis of random dopant-induced effects in semiconductor devices is presented. It is based on the "small signal analysis" (perturbation) technique. This approach is computationally much more efficient than the existing purely "statistical" techniques, and it yields the information that can be directly used for the design of dopant fluctuation-resistant structures of semiconductor devices. This approach is applied to the analysis of random dopant-induced fluctuations of threshold voltages and frequency response characteristics of MOSFET devices.


Energies ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4806
Author(s):  
Jia Yao ◽  
Kewei Li ◽  
Kaisheng Zheng ◽  
Alexander Abramovitz

Switched inductor (SI) converters are popular in applications requiring a steeper conversion ratio. However, these converters operate a twin inductor switching cell, which complicates the small-signal modeling. This paper proposes an expeditious small-signal analysis method to model the SI converters. The offered modeling approach is hinged on the analogy existing between the SI converters and certain Tapped Inductor (TI) converters. It is suggested here that by virtue of the analogy of the SI converters and TI converters the small-signal model of the SI converter is identical to that of its ideal TI counterpart. Hence, the recently developed Tapped Inductor Switcher (TIS) methodology can be applied to the modeling of the SI converters as well. As an example, the small-signal model of the Switched Inductor Buck converter is obtained. Theoretical analysis was confirmed by simulation and experimental results. In addition, several other SI converters and their TI counterparts are identified.


Author(s):  
Zhizhong Zhang ◽  
Heng Du ◽  
Shumei Chen ◽  
Hui Huang

The electro-hydraulic servo steering system is one of the core components of a heavy vehicle, and frequency response characteristics of this system are essential to guarantee the vehicle flexibility. However, it is difficult to establish frequency domain model directly for the frequency response characteristics analysis due to the strong nonlinearity of steering trapezoidal mechanism and hydraulic power system in electro-hydraulic servo steering system. This paper proposes a simplified linearization analysis method for the electro-hydraulic servo steering system. By variable substitution defining the load flow and load pressure, and linear fit between double tire angles and cylinder displacement, the original model is simplified to a frequency domain model. Based on this model, the essential frequency response characteristics and the effects of key parameters to electro-hydraulic servo steering system can be obtained. Through the sweep frequency response analysis, the linearized frequency domain model is compared with the nonlinear time domain model and the actual test system, respectively. As shown in Bode plots, the amplitude-frequency phase-frequency characteristic curves of models match well, which verifies linearization analysis method and linear frequency domain model. The key parameters affecting the system frequency domain characteristics are the valve flow gain, the area of cylinder rodless and rod chamber, and the linearization coefficient between the left and right tire angles and so on. The electro-hydraulic servo steering system bandwidth is only 7.38 rad/s (1.17 Hz). This research is helpful for the design and optimization of heavy vehicle dynamic steering system.


Author(s):  
Frederick Ray I. Gomez

The paper presents a study of common-gate amplifier focused in small-signal analysis. Small-signal or frequency response of the amplifier determines the maximum frequency of operation and the effective bandwidth of the circuit. With the analysis, the circuit could be modeled and designed to achieve gain at the desired frequency of operation. Design tradeoffs are inevitable and are carefully considered in the analysis and design, for radio frequency (RF) applications.


2013 ◽  
Vol 27 (21) ◽  
pp. 1350105 ◽  
Author(s):  
C. WANG ◽  
J. C. CAO

We theoretically study the static and dynamic transport properties of Mott–Gurney diodes based on semiconducting single-walled zigzag carbon nanotubes (CNTs). The electric field and velocity distribution of the diode under dc voltage is obtained by solving the steady-state drift-diffusion equations, which involve the negative differential velocity. The current–voltage characteristic of CNT diode exhibits a distinctive positive differential resistance. The high-frequency impedance is calculated with the small-signal analysis method. A major feature of the proposed CNT diode is that the bias- and tube index-dependent impedance show several negative windows in terahertz frequency range despite the positivity of the dc differential resistance. This property makes the CNT-based Mott–Gurney diode a promising candidate for the generation and amplification of terahertz signals within the desired frequency region.


Sign in / Sign up

Export Citation Format

Share Document