THE THERMODYNAMIC, TRANSPORT AND MAGNETOTRANSPORT PROPERTIES OF Mn-DOPED GaAs/InGaAs/GaAs QUANTUM WELL WITH FERROMAGNETISM

2009 ◽  
Vol 23 (17) ◽  
pp. 3596-3601 ◽  
Author(s):  
LJUDMILA SHCHUROVA ◽  
VLADIMIR KULBACHINSKII
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Temperature Dependence ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Charge Carriers ◽  
Free Charge ◽  
Diluted Magnetic ◽  
Mn Doped ◽  
The Magnetic Field

We have investigated the thermodynamic, transport and magnetotransport properties of free charge carriers in a diluted magnetic semiconductor with a quantum well In0.17Ga0.83As in GaAs with δ-doped by C and Mn. In order to determine the density of the holes in a quantum well, we carried out thermodynamic calculations of the system of free holes, atoms Mn0 and ions Mn-. We calculated the temperature dependence of resistance and magnetoresistance of holes in the quantum well. The contributions of various scattering mechanisms of holes to the resistance were analyzed. The negative magnetoresistance are explained as the reduction of spin-flip scattering by aligning spins of the magnetic field.

Calculation of Carrier Scattering and Negative Magnetoresistance in Mn-Doped GaAs/InGaAs/GaAs Quantum Well with Ferromagnetism

2009 ◽  
Vol 152-153 ◽  
pp. 283-286 ◽  
Author(s):  
V.A. Kulbachinskii ◽  
L. Shchurova
Keyword(s):  
Quantum Well ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Charge Carriers ◽  
Negative Magnetoresistance ◽  
Free Charge ◽  
Carrier Scattering ◽  
Diluted Magnetic ◽  
Mn Doped ◽  
The Magnetic Field

We have investigated the thermodynamic, transport and magnetotransport properties of free charge carriers in a diluted magnetic semiconductor with a quantum well InGaAs in the GaAs with δ-doped by C and Mn. In order to determine the density of the holes in a quantum well, we carried out thermodynamic calculations of the system of free holes, atoms Mn0 and ions Mn–. We calculated the temperature dependence of resistance and magnetoresistance of holes in the quantum well. The contributions of various scattering mechanisms of holes to the resistance were analyzed. The negative magnetoresistance are explained as the reduction of spin-flip scattering by aligning spins of the magnetic field.

Electron g-Factor in Diluted Magnetic Semiconductor Quantum Well with Parabolic Potential in the Presence of Rashba Effect and Magnetic Field

2015 ◽  
Vol 70 (2) ◽  
pp. 109-114 ◽  
Author(s):  
Arif M. Babanlı ◽  
Ekrem Artunç ◽  
Turgut F. Kasalak
Keyword(s):  
Magnetic Field ◽  
Energy Spectrum ◽  
Quantum Well ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Electron Energy Spectrum ◽  
Ion Concentration ◽  
Spin Orbital ◽  
Parabolic Potential ◽  
Diluted Magnetic

AbstractWe have studied the Rashba spin-orbital effect on a diluted magnetic semiconductor (DMS) quantum well with parabolic potential in the presence of a magnetic field parallel to the z axis, taking into account the Zeeman coupling and the s-d exchange interaction between the carriers and the magnetic ions. We have obtained an analytical expression for the electron energy spectrum, which depends on the magnetic ion concentration, temperature, and strength of magnetic field. By using the obtained energy spectrum, we calculated the electron effective g*-factor. We have found that effective g*-factor increases when the magnetic field increases; by increasing the strength of spin-orbit interaction, the electron g*-factor decreases and by increasing the temperature, the electron g*-factor increases.

scholarly journals Effects of pulsed magnetic field on Mn-doped ZnO diluted magnetic semiconductor prepared by hydrothermal method

2012 ◽  
Vol 61 (19) ◽  
pp. 198103
Author(s):  
Wang Shi-Wei ◽  
Zhu Ming-Yuan ◽  
Zhong Min ◽  
Liu Cong ◽  
Li Ying ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Hydrothermal Method ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Pulsed Magnetic Field ◽  
Doped Zno ◽  
Diluted Magnetic ◽  
Mn Doped

scholarly journals Shubnikov-de Haas oscillations in diluted magnetic semiconductors (Cd1-x-yZnxMny)3As2

2018 ◽  
Vol 185 ◽  
pp. 06001
Author(s):  
Vasilii S. Zakhvalinskii ◽  
Tatyana B. Nikulicheva ◽  
Erkki Lähderanta ◽  
Aleksey V. Kochura ◽  
Ekaterina A. Nikitovskaia ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Solid Solutions ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Shubnikov De Haas Oscillations ◽  
Diluted Magnetic ◽  
The Magnetic Field ◽  
Cyclotron Mass

Single crystals of a diluted magnetic semiconductor (Cd1-x-yZnxMny)3As2 (CZMA) (x + y = 0.4;y=0.04 and 0.08) obtained by Bridgman method were used. The Shubnikov-de Haas (SdH) effect was observed within studying of the dependence of the resistivity on the magnetic field in CZMA solid solutions. The values of the cyclotron mass mc, Hall and Shubnikov carrier concentrations were calculated.

Effects of Exchange Interaction in Diluted Magnetic Semiconductor Quantum Wells

1986 ◽  
Vol 89 ◽  
Author(s):  
Jacek Kossut ◽  
Jacek K. Furdyna
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Transition Metal Ions ◽  
Spin Coupling ◽  
Diluted Magnetic ◽  
The Magnetic Field

AbstractThe presence of transition metal ions (typically Mn2+) in diluted magnetic semiconductors (DMS) results in a strong spin-spin coupling between localized magnetic moments and band electrons. This leads to considerable modifications of the semiconductor band structure in the presence of strong magnetic fields, e.g., to large spin-dependent shifts of the electronic states at the band edge. This feature is of particular interest in the context of quantum wells involving DMS. Starting with the original idea of a “spin-superlattice”, we concentrate on various opportunities which arise due to the tunability of the depth of the quantum wells by the magnetic field and/or temperature associated with the aforementioned spindependent effects. Thus, we discuss boil-off and freeze-out of electrons to and from quantum wells, selective spin tunneling across the barriers, tunable infrared emitters, enhancement of electronic g-factors in shallow non-magnetic wells surrounded by DMS barriers, the possibility of transition from a type-1 to a type-il superlattice induced by the magnetic field, and quantum oscillations anomalies in DMS quantum wells.

SPIN DEPENDENT WIGNER FUNCTION SIMULATIONS OF DILUTED MAGNETIC SEMICONDUCTOR SUPERLATTICES – B FIELD TUNING

2007 ◽  
Vol 17 (04) ◽  
pp. 877-888 ◽  
Author(s):  
H. L. GRUBIN
Keyword(s):  
High Frequency ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Device Fabrication ◽  
Double Barrier ◽  
General Terms ◽  
High Frequency Operation ◽  
Diluted Magnetic ◽  
Superlattice Structures ◽  
The Magnetic Field

Two terminal devices have traditionally provided band-structure based high frequency operation. Third terminal control often involves hybrid design approaches. The presence of diluted magnetic semiconductor layers in device fabrication should permit the magnetic field to function as a pseudothird terminal. This is discussed for single barrier, double barrier and superlattice structures, where control is demonstrated. The limits of high frequency operation are discussed in general terms with application to barrier devices and superlattices containing DMS layers.

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