scholarly journals Elektronenoptische Untersuchungen an Tellur

1968 ◽  
Vol 23 (4) ◽  
pp. 530-532
Author(s):  
P. Klein ◽  
K. Kleinhenz

Starting from bulk single crystals, tellurium has been prepared for transmission electron microscopy. The foil orientation was {101̅0} , two planes of the reciprocal lattice being projected into the electron diffraction image plane. Dislocations and small angle grain boundaries were observed and could be explained by considering glide on {101̅0} and (0001). Hints for a “rhombohedral” view of the tellurium lattice were found.

1993 ◽  
Vol 313 ◽  
Author(s):  
P. Gautier ◽  
T. Valet ◽  
O. Durand ◽  
J.C. Jacquet ◽  
J.P. Chevalier

ABSTRACT(NiFe/Cu/Co/Cu) Multilayers grown on (100) Si by RF sputtering have been studied by transmission electron Microscopy. The samples are found to be polycristalline and are only weakly textured. The period of the multilayers is clearly visible by small angle electron diffraction and Fresnel imaging. The waviness of the layers appears to be related to the columnar structure of the samples. Experimental images with Fresnel contrast are compared with simulations in order to assess the thickness and roughness of each individual layer.


1969 ◽  
Vol 24 (6) ◽  
pp. 912-917
Author(s):  
K Kleinhenz

Starting from bulk single crystals, thin silicon foils had been prepared for transmission electron microscopy and afterwards bombarded by ions. The dependence of the growth of defect clusters on nature of ions, ion energy, duration of bombardment, and foil temperature has been investigated. A model of the formation of the defects could be obtain analysing them by means of selected area diffraction and dark-field technique.


2009 ◽  
Vol 24 (5) ◽  
pp. 1688-1692 ◽  
Author(s):  
C.L. Chen ◽  
W. Lu ◽  
L.L. He ◽  
H.Q. Ye

The orientation relationships among TiB (B27), B2, and Ti3Al phases have been investigated by transmission electron microscopy. By using the composite selected-area electron diffraction technique, the orientation relationship between TiB (B27) and B2 was determined to be [100]TiB[001]B2, (001)TiB(010)B2; and that between TiB (B27) and Ti3Al was . These orientation relationships have been predicted precisely by the method of coincidence of reciprocal lattice points.


Author(s):  
George Guthrie ◽  
David Veblen

The nature of a geologic fluid can often be inferred from fluid-filled cavities (generally <100 μm in size) that are trapped during the growth of a mineral. A variety of techniques enables the fluids and daughter crystals (any solid precipitated from the trapped fluid) to be identified from cavities greater than a few micrometers. Many minerals, however, contain fluid inclusions smaller than a micrometer. Though inclusions this small are difficult or impossible to study by conventional techniques, they are ideally suited for study by analytical/ transmission electron microscopy (A/TEM) and electron diffraction. We have used this technique to study fluid inclusions and daughter crystals in diamond and feldspar.Inclusion-rich samples of diamond and feldspar were ion-thinned to electron transparency and examined with a Philips 420T electron microscope (120 keV) equipped with an EDAX beryllium-windowed energy dispersive spectrometer. Thin edges of the sample were perforated in areas that appeared in light microscopy to be populated densely with inclusions. In a few cases, the perforations were bound polygonal sides to which crystals (structurally and compositionally different from the host mineral) were attached (Figure 1).


Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.


Author(s):  
J.G. Wen ◽  
K.K. Fung

Bi-based superconducting phases have been found to be members of a structural series represented by Bi2Sr2Can−1Cun−1On+4, n=1,2,3, and are referred to as 2201, 2212, 2223 phases. All these phases are incommensurate modulated structures. The super space groups are P2/b, NBbmb 2201, 2212 phases respectively. Pb-doped ceramic samples and single crystals and Y-doped single crystals have been studied by transmission electron microscopy.Modulated structures of all Bi-based superconducting phases are in b-c plane, therefore, it is the best way to determine modulated structure and c parameter in diffraction pattern. FIG. 1,2,3 show diffraction patterns of three kinds of modulations in Pb-doped ceramic samples. Energy dispersive X-ray analysis (EDAX) confirms the presence of Pb in the three modulated structures. Parameters c are 3 0.06, 38.29, 30.24Å, ie 2212, 2223, 2212 phases for FIG. 1,2,3 respectively. Their average space groups are all Bbmb.


Soft Matter ◽  
2021 ◽  
Vol 17 (11) ◽  
pp. 3096-3104
Author(s):  
Valeria Castelletto ◽  
Jani Seitsonen ◽  
Janne Ruokolainen ◽  
Ian W. Hamley

A designed surfactant-like peptide is shown, using a combination of cryogenic-transmission electron microscopy and small-angle X-ray scattering, to have remarkable pH-dependent self-assembly properties.


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